FR2339956B1 - - Google Patents

Info

Publication number
FR2339956B1
FR2339956B1 FR7602588A FR7602588A FR2339956B1 FR 2339956 B1 FR2339956 B1 FR 2339956B1 FR 7602588 A FR7602588 A FR 7602588A FR 7602588 A FR7602588 A FR 7602588A FR 2339956 B1 FR2339956 B1 FR 2339956B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7602588A
Other languages
French (fr)
Other versions
FR2339956A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Priority to FR7602588A priority Critical patent/FR2339956A1/fr
Priority to GB3434/77A priority patent/GB1539294A/en
Priority to DE19772703322 priority patent/DE2703322A1/de
Priority to JP960777A priority patent/JPS5294071A/ja
Publication of FR2339956A1 publication Critical patent/FR2339956A1/fr
Application granted granted Critical
Publication of FR2339956B1 publication Critical patent/FR2339956B1/fr
Priority to US06/083,230 priority patent/US4307131A/en
Granted legal-status Critical Current

Links

Classifications

    • H10P76/2042—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D64/0116—
    • H10D64/0124—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H10P50/20—
    • H10P76/2045—
    • H10P95/50—
FR7602588A 1976-01-30 1976-01-30 Procede de realisation de contacts " metal-semiconducteur " a grande densite d'injection, et dispositifs obtenus par ledit procede Granted FR2339956A1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7602588A FR2339956A1 (fr) 1976-01-30 1976-01-30 Procede de realisation de contacts " metal-semiconducteur " a grande densite d'injection, et dispositifs obtenus par ledit procede
GB3434/77A GB1539294A (en) 1976-01-30 1977-01-27 Method of manufacturing metal-semiconductor contacts exhibiting high injected current density and devices obtained by said method
DE19772703322 DE2703322A1 (de) 1976-01-30 1977-01-27 Verfahren zur herstellung von metall-halbleiter-kontakten mit grosser strominjektionsdichte
JP960777A JPS5294071A (en) 1976-01-30 1977-01-31 Method of making contact between metal and semiconductor injected with high density current
US06/083,230 US4307131A (en) 1976-01-30 1979-10-10 Method of manufacturing metal-semiconductor contacts exhibiting high injected current density

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7602588A FR2339956A1 (fr) 1976-01-30 1976-01-30 Procede de realisation de contacts " metal-semiconducteur " a grande densite d'injection, et dispositifs obtenus par ledit procede

Publications (2)

Publication Number Publication Date
FR2339956A1 FR2339956A1 (fr) 1977-08-26
FR2339956B1 true FR2339956B1 (enExample) 1979-07-13

Family

ID=9168581

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7602588A Granted FR2339956A1 (fr) 1976-01-30 1976-01-30 Procede de realisation de contacts " metal-semiconducteur " a grande densite d'injection, et dispositifs obtenus par ledit procede

Country Status (4)

Country Link
JP (1) JPS5294071A (enExample)
DE (1) DE2703322A1 (enExample)
FR (1) FR2339956A1 (enExample)
GB (1) GB1539294A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025306B1 (enExample) * 1968-04-04 1975-08-22
DE2111089A1 (de) * 1970-03-10 1971-09-23 Westinghouse Electric Corp Verfahren zur Herstellung eines Halbleiterschaltelementes

Also Published As

Publication number Publication date
FR2339956A1 (fr) 1977-08-26
GB1539294A (en) 1979-01-31
DE2703322A1 (de) 1977-08-04
JPS5294071A (en) 1977-08-08

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Legal Events

Date Code Title Description
ST Notification of lapse