GB1539294A - Method of manufacturing metal-semiconductor contacts exhibiting high injected current density and devices obtained by said method - Google Patents

Method of manufacturing metal-semiconductor contacts exhibiting high injected current density and devices obtained by said method

Info

Publication number
GB1539294A
GB1539294A GB3434/77A GB343477A GB1539294A GB 1539294 A GB1539294 A GB 1539294A GB 3434/77 A GB3434/77 A GB 3434/77A GB 343477 A GB343477 A GB 343477A GB 1539294 A GB1539294 A GB 1539294A
Authority
GB
United Kingdom
Prior art keywords
current density
exhibiting high
injected current
manufacturing metal
devices obtained
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3434/77A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of GB1539294A publication Critical patent/GB1539294A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P76/2042—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D64/0116—
    • H10D64/0124—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/256—Source or drain electrodes for field-effect devices for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H10P50/20—
    • H10P76/2045—
    • H10P95/50—
GB3434/77A 1976-01-30 1977-01-27 Method of manufacturing metal-semiconductor contacts exhibiting high injected current density and devices obtained by said method Expired GB1539294A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7602588A FR2339956A1 (fr) 1976-01-30 1976-01-30 Procede de realisation de contacts " metal-semiconducteur " a grande densite d'injection, et dispositifs obtenus par ledit procede

Publications (1)

Publication Number Publication Date
GB1539294A true GB1539294A (en) 1979-01-31

Family

ID=9168581

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3434/77A Expired GB1539294A (en) 1976-01-30 1977-01-27 Method of manufacturing metal-semiconductor contacts exhibiting high injected current density and devices obtained by said method

Country Status (4)

Country Link
JP (1) JPS5294071A (enExample)
DE (1) DE2703322A1 (enExample)
FR (1) FR2339956A1 (enExample)
GB (1) GB1539294A (enExample)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5025306B1 (enExample) * 1968-04-04 1975-08-22
DE2111089A1 (de) * 1970-03-10 1971-09-23 Westinghouse Electric Corp Verfahren zur Herstellung eines Halbleiterschaltelementes

Also Published As

Publication number Publication date
FR2339956A1 (fr) 1977-08-26
DE2703322A1 (de) 1977-08-04
FR2339956B1 (enExample) 1979-07-13
JPS5294071A (en) 1977-08-08

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee