JPS528782A - Charge coupled device process - Google Patents
Charge coupled device processInfo
- Publication number
- JPS528782A JPS528782A JP8505075A JP8505075A JPS528782A JP S528782 A JPS528782 A JP S528782A JP 8505075 A JP8505075 A JP 8505075A JP 8505075 A JP8505075 A JP 8505075A JP S528782 A JPS528782 A JP S528782A
- Authority
- JP
- Japan
- Prior art keywords
- charge coupled
- coupled device
- device process
- charge
- effiency
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010354 integration Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
PURPOSE:By diffusing using a photoresist film as a mask after forming gate electrodes, unify the charge transfer effiency of charge coupled devices improve degree of integration.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8505075A JPS528782A (en) | 1975-07-10 | 1975-07-10 | Charge coupled device process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8505075A JPS528782A (en) | 1975-07-10 | 1975-07-10 | Charge coupled device process |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS528782A true JPS528782A (en) | 1977-01-22 |
Family
ID=13847830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8505075A Pending JPS528782A (en) | 1975-07-10 | 1975-07-10 | Charge coupled device process |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS528782A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5286987A (en) * | 1991-11-26 | 1994-02-15 | Sharp Kabushiki Kaisha | Charge transfer device |
-
1975
- 1975-07-10 JP JP8505075A patent/JPS528782A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5286987A (en) * | 1991-11-26 | 1994-02-15 | Sharp Kabushiki Kaisha | Charge transfer device |
US5385860A (en) * | 1991-11-26 | 1995-01-31 | Sharp Kabushiki Kaisha | Charge transfer device |
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