JPS5286983A - Ion plating apparatus - Google Patents
Ion plating apparatusInfo
- Publication number
- JPS5286983A JPS5286983A JP317776A JP317776A JPS5286983A JP S5286983 A JPS5286983 A JP S5286983A JP 317776 A JP317776 A JP 317776A JP 317776 A JP317776 A JP 317776A JP S5286983 A JPS5286983 A JP S5286983A
- Authority
- JP
- Japan
- Prior art keywords
- ion plating
- plating apparatus
- substrate
- film
- alternating current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE:To form the film on the substrate at low temperature, by impressing low alternating current voltage between the evaporation source and the substrate in treating room, connected to the vacuum exhaust system.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP317776A JPS5286983A (en) | 1976-01-16 | 1976-01-16 | Ion plating apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP317776A JPS5286983A (en) | 1976-01-16 | 1976-01-16 | Ion plating apparatus |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5286983A true JPS5286983A (en) | 1977-07-20 |
JPS5514140B2 JPS5514140B2 (en) | 1980-04-14 |
Family
ID=11550095
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP317776A Granted JPS5286983A (en) | 1976-01-16 | 1976-01-16 | Ion plating apparatus |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5286983A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11707063B2 (en) | 2016-08-23 | 2023-07-25 | Bosquet Silicon Corp. | Compound, production method therefor, and hydrogen supply method |
WO2019021769A1 (en) | 2017-07-27 | 2019-01-31 | 国立大学法人大阪大学 | Drug and production method therefor |
JP6893586B2 (en) | 2019-01-24 | 2021-06-23 | 国立大学法人大阪大学 | Drugs and their manufacturing methods |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4974178A (en) * | 1972-11-18 | 1974-07-17 |
-
1976
- 1976-01-16 JP JP317776A patent/JPS5286983A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4974178A (en) * | 1972-11-18 | 1974-07-17 |
Also Published As
Publication number | Publication date |
---|---|
JPS5514140B2 (en) | 1980-04-14 |
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