JPS5283178A - Method of testing pn junction - Google Patents

Method of testing pn junction

Info

Publication number
JPS5283178A
JPS5283178A JP14793476A JP14793476A JPS5283178A JP S5283178 A JPS5283178 A JP S5283178A JP 14793476 A JP14793476 A JP 14793476A JP 14793476 A JP14793476 A JP 14793476A JP S5283178 A JPS5283178 A JP S5283178A
Authority
JP
Japan
Prior art keywords
junction
testing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14793476A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5346700B2 (US20030157376A1-20030821-M00001.png
Inventor
Reonaado Baakuuru Rojiyaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5283178A publication Critical patent/JPS5283178A/ja
Publication of JPS5346700B2 publication Critical patent/JPS5346700B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/302—Contactless testing
    • G01R31/308—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP14793476A 1975-12-31 1976-12-10 Method of testing pn junction Granted JPS5283178A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/645,759 US4015203A (en) 1975-12-31 1975-12-31 Contactless LSI junction leakage testing method

Publications (2)

Publication Number Publication Date
JPS5283178A true JPS5283178A (en) 1977-07-11
JPS5346700B2 JPS5346700B2 (US20030157376A1-20030821-M00001.png) 1978-12-15

Family

ID=24590368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14793476A Granted JPS5283178A (en) 1975-12-31 1976-12-10 Method of testing pn junction

Country Status (4)

Country Link
US (2) US4015203A (US20030157376A1-20030821-M00001.png)
JP (1) JPS5283178A (US20030157376A1-20030821-M00001.png)
DE (1) DE2655938C2 (US20030157376A1-20030821-M00001.png)
FR (1) FR2337347A1 (US20030157376A1-20030821-M00001.png)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
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JPS5491049A (en) * 1977-12-12 1979-07-19 Ibm Method of nonndestructively measuring immersion oxygen content into silicon wafer having no junction
US4719418A (en) * 1985-02-19 1988-01-12 International Business Machines Corporation Defect leakage screen system
US4739252A (en) * 1986-04-24 1988-04-19 International Business Machines Corporation Current attenuator useful in a very low leakage current measuring device
JPH02284440A (ja) * 1989-04-26 1990-11-21 Mitsubishi Electric Corp 太陽電池溶接温度測定方法及び太陽電池特性確認方法
JP2921916B2 (ja) * 1989-11-17 1999-07-19 株式会社東芝 半導体ウェーハ評価装置
US5594247A (en) * 1995-07-07 1997-01-14 Keithley Instruments, Inc. Apparatus and method for depositing charge on a semiconductor wafer
US5767693A (en) * 1996-09-04 1998-06-16 Smithley Instruments, Inc. Method and apparatus for measurement of mobile charges with a corona screen gun
US6104206A (en) * 1997-08-05 2000-08-15 Verkuil; Roger L. Product wafer junction leakage measurement using corona and a kelvin probe
US6275060B1 (en) * 1997-09-02 2001-08-14 Midwest Research Institute Apparatus and method for measuring minority carrier lifetimes in semiconductor materials
US5929652A (en) * 1997-09-02 1999-07-27 Midwest Research Institute Apparatus for measuring minority carrier lifetimes in semiconductor materials
US6249117B1 (en) 1999-03-24 2001-06-19 Wafer Standards, Inc. Device for monitoring and calibrating oxide charge measurement equipment and method therefor
US6538462B1 (en) 1999-11-30 2003-03-25 Semiconductor Diagnostics, Inc. Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge
US6815974B1 (en) 2003-07-14 2004-11-09 Semiconductor Diagnostics, Inc. Determining composition of mixed dielectrics
US7103484B1 (en) 2003-10-31 2006-09-05 Kla-Tencor Technologies Corp. Non-contact methods for measuring electrical thickness and determining nitrogen content of insulating films
JP4758358B2 (ja) * 2004-01-29 2011-08-24 ケーエルエー−テンカー コーポレイション レチクル設計データにおける欠陥を検出するためのコンピュータに実装される方法
JP4904034B2 (ja) * 2004-09-14 2012-03-28 ケーエルエー−テンカー コーポレイション レチクル・レイアウト・データを評価するための方法、システム及び搬送媒体
DE102005032601A1 (de) * 2005-01-07 2006-07-20 Heidelberger Druckmaschinen Ag Druckmaschine
US7769225B2 (en) 2005-08-02 2010-08-03 Kla-Tencor Technologies Corp. Methods and systems for detecting defects in a reticle design pattern
US7570796B2 (en) * 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US8041103B2 (en) * 2005-11-18 2011-10-18 Kla-Tencor Technologies Corp. Methods and systems for determining a position of inspection data in design data space
US7676077B2 (en) 2005-11-18 2010-03-09 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
WO2008077100A2 (en) 2006-12-19 2008-06-26 Kla-Tencor Corporation Systems and methods for creating inspection recipes
US8194968B2 (en) * 2007-01-05 2012-06-05 Kla-Tencor Corp. Methods and systems for using electrical information for a device being fabricated on a wafer to perform one or more defect-related functions
US7738093B2 (en) * 2007-05-07 2010-06-15 Kla-Tencor Corp. Methods for detecting and classifying defects on a reticle
US7962863B2 (en) * 2007-05-07 2011-06-14 Kla-Tencor Corp. Computer-implemented methods, systems, and computer-readable media for determining a model for predicting printability of reticle features on a wafer
US8213704B2 (en) * 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
US7796804B2 (en) * 2007-07-20 2010-09-14 Kla-Tencor Corp. Methods for generating a standard reference die for use in a die to standard reference die inspection and methods for inspecting a wafer
US7711514B2 (en) * 2007-08-10 2010-05-04 Kla-Tencor Technologies Corp. Computer-implemented methods, carrier media, and systems for generating a metrology sampling plan
US7975245B2 (en) * 2007-08-20 2011-07-05 Kla-Tencor Corp. Computer-implemented methods for determining if actual defects are potentially systematic defects or potentially random defects
US8139844B2 (en) * 2008-04-14 2012-03-20 Kla-Tencor Corp. Methods and systems for determining a defect criticality index for defects on wafers
US9659670B2 (en) * 2008-07-28 2017-05-23 Kla-Tencor Corp. Computer-implemented methods, computer-readable media, and systems for classifying defects detected in a memory device area on a wafer
US8775101B2 (en) 2009-02-13 2014-07-08 Kla-Tencor Corp. Detecting defects on a wafer
US8204297B1 (en) 2009-02-27 2012-06-19 Kla-Tencor Corp. Methods and systems for classifying defects detected on a reticle
US8112241B2 (en) * 2009-03-13 2012-02-07 Kla-Tencor Corp. Methods and systems for generating an inspection process for a wafer
US8781781B2 (en) 2010-07-30 2014-07-15 Kla-Tencor Corp. Dynamic care areas
US9170211B2 (en) 2011-03-25 2015-10-27 Kla-Tencor Corp. Design-based inspection using repeating structures
US9087367B2 (en) 2011-09-13 2015-07-21 Kla-Tencor Corp. Determining design coordinates for wafer defects
US8831334B2 (en) 2012-01-20 2014-09-09 Kla-Tencor Corp. Segmentation for wafer inspection
US8826200B2 (en) 2012-05-25 2014-09-02 Kla-Tencor Corp. Alteration for wafer inspection
US9189844B2 (en) 2012-10-15 2015-11-17 Kla-Tencor Corp. Detecting defects on a wafer using defect-specific information
US9053527B2 (en) 2013-01-02 2015-06-09 Kla-Tencor Corp. Detecting defects on a wafer
US9134254B2 (en) 2013-01-07 2015-09-15 Kla-Tencor Corp. Determining a position of inspection system output in design data space
US9311698B2 (en) 2013-01-09 2016-04-12 Kla-Tencor Corp. Detecting defects on a wafer using template image matching
KR102019534B1 (ko) 2013-02-01 2019-09-09 케이엘에이 코포레이션 결함 특유의, 다중 채널 정보를 이용한 웨이퍼 상의 결함 검출
US9865512B2 (en) 2013-04-08 2018-01-09 Kla-Tencor Corp. Dynamic design attributes for wafer inspection
US9310320B2 (en) 2013-04-15 2016-04-12 Kla-Tencor Corp. Based sampling and binning for yield critical defects
US9921261B2 (en) * 2013-10-17 2018-03-20 Kla-Tencor Corporation Method and apparatus for non-contact measurement of sheet resistance and shunt resistance of p-n junctions

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2859407A (en) * 1956-03-27 1958-11-04 Sylvania Electric Prod Method and device for measuring semiconductor parameters
US3829743A (en) * 1969-09-18 1974-08-13 Matsushita Electric Ind Co Ltd Variable capacitance device
US3745454A (en) * 1971-12-03 1973-07-10 Motorola Inc Method and means for measuring carrier lifetime in epitaxial films
US3798539A (en) * 1973-02-15 1974-03-19 Magnetic Analysis Corp Pulse eddy current testing apparatus using pulses having a 25% duty cycle with gating at pulse edges

Also Published As

Publication number Publication date
USRE29918E (en) 1979-02-20
DE2655938A1 (de) 1977-07-14
JPS5346700B2 (US20030157376A1-20030821-M00001.png) 1978-12-15
FR2337347B1 (US20030157376A1-20030821-M00001.png) 1980-10-24
DE2655938C2 (de) 1984-06-28
US4015203A (en) 1977-03-29
FR2337347A1 (fr) 1977-07-29

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