JPS5279889A - Semiconductor laser device for high speed modulation - Google Patents

Semiconductor laser device for high speed modulation

Info

Publication number
JPS5279889A
JPS5279889A JP15887275A JP15887275A JPS5279889A JP S5279889 A JPS5279889 A JP S5279889A JP 15887275 A JP15887275 A JP 15887275A JP 15887275 A JP15887275 A JP 15887275A JP S5279889 A JPS5279889 A JP S5279889A
Authority
JP
Japan
Prior art keywords
semiconductor laser
high speed
laser device
speed modulation
waveform
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15887275A
Other languages
English (en)
Other versions
JPS5821832B2 (ja
Inventor
Roi.Rangu
Isao Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15887275A priority Critical patent/JPS5821832B2/ja
Priority to US05/685,915 priority patent/US4079339A/en
Publication of JPS5279889A publication Critical patent/JPS5279889A/ja
Publication of JPS5821832B2 publication Critical patent/JPS5821832B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/08—Construction or shape of optical resonators or components thereof
    • H01S3/081—Construction or shape of optical resonators or components thereof comprising three or more reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
JP15887275A 1975-05-17 1975-12-26 コウソクヘンチヨウヨウハンドウタイレ−ザソウチ Expired JPS5821832B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP15887275A JPS5821832B2 (ja) 1975-12-26 1975-12-26 コウソクヘンチヨウヨウハンドウタイレ−ザソウチ
US05/685,915 US4079339A (en) 1975-05-17 1976-05-12 Light self-injecting semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15887275A JPS5821832B2 (ja) 1975-12-26 1975-12-26 コウソクヘンチヨウヨウハンドウタイレ−ザソウチ

Publications (2)

Publication Number Publication Date
JPS5279889A true JPS5279889A (en) 1977-07-05
JPS5821832B2 JPS5821832B2 (ja) 1983-05-04

Family

ID=15681235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15887275A Expired JPS5821832B2 (ja) 1975-05-17 1975-12-26 コウソクヘンチヨウヨウハンドウタイレ−ザソウチ

Country Status (1)

Country Link
JP (1) JPS5821832B2 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511342A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Laser diode single mode oscillation device
JPS57154291A (en) * 1981-03-18 1982-09-24 Hitachi Ltd Liquid crystal display unit
JPS5829861U (ja) * 1981-08-20 1983-02-26 日本電気株式会社 波長制御半導体レ−ザ装置
JPS5960312A (ja) * 1982-09-30 1984-04-06 Fujitsu Ltd 光フアイバ・ジヤイロ・システム
JPS60133776A (ja) * 1983-12-21 1985-07-16 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPS60136276A (ja) * 1983-12-23 1985-07-19 Fujitsu Ltd 半導体レ−ザ装置
JP2005159000A (ja) * 2003-11-26 2005-06-16 Sony Corp 半導体レーザ

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5511342A (en) * 1978-07-10 1980-01-26 Nippon Telegr & Teleph Corp <Ntt> Laser diode single mode oscillation device
JPS57154291A (en) * 1981-03-18 1982-09-24 Hitachi Ltd Liquid crystal display unit
JPS5829861U (ja) * 1981-08-20 1983-02-26 日本電気株式会社 波長制御半導体レ−ザ装置
JPS5960312A (ja) * 1982-09-30 1984-04-06 Fujitsu Ltd 光フアイバ・ジヤイロ・システム
JPH0216969B2 (ja) * 1982-09-30 1990-04-19 Fujitsu Ltd
JPS60133776A (ja) * 1983-12-21 1985-07-16 Nippon Telegr & Teleph Corp <Ntt> 半導体レ−ザ装置
JPS60136276A (ja) * 1983-12-23 1985-07-19 Fujitsu Ltd 半導体レ−ザ装置
JP2005159000A (ja) * 2003-11-26 2005-06-16 Sony Corp 半導体レーザ

Also Published As

Publication number Publication date
JPS5821832B2 (ja) 1983-05-04

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