JPS5276937A - Method of chemically accumulating low stress glass layer - Google Patents

Method of chemically accumulating low stress glass layer

Info

Publication number
JPS5276937A
JPS5276937A JP51111684A JP11168476A JPS5276937A JP S5276937 A JPS5276937 A JP S5276937A JP 51111684 A JP51111684 A JP 51111684A JP 11168476 A JP11168476 A JP 11168476A JP S5276937 A JPS5276937 A JP S5276937A
Authority
JP
Japan
Prior art keywords
chemically
glass layer
low stress
stress glass
accumulating low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51111684A
Other languages
English (en)
Other versions
JPS558950B2 (ja
Inventor
Ruusaa Shiyuneiburu Jiyooji
Uein Fuitsushiya Arubaato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of JPS5276937A publication Critical patent/JPS5276937A/ja
Publication of JPS558950B2 publication Critical patent/JPS558950B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Manufacture, Treatment Of Glass Fibers (AREA)
  • Inorganic Insulating Materials (AREA)
  • Chemical Vapour Deposition (AREA)
JP51111684A 1975-12-18 1976-09-16 Method of chemically accumulating low stress glass layer Granted JPS5276937A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/642,141 US4196232A (en) 1975-12-18 1975-12-18 Method of chemically vapor-depositing a low-stress glass layer

Publications (2)

Publication Number Publication Date
JPS5276937A true JPS5276937A (en) 1977-06-28
JPS558950B2 JPS558950B2 (ja) 1980-03-06

Family

ID=24575370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51111684A Granted JPS5276937A (en) 1975-12-18 1976-09-16 Method of chemically accumulating low stress glass layer

Country Status (7)

Country Link
US (1) US4196232A (ja)
JP (1) JPS5276937A (ja)
DE (1) DE2641387C3 (ja)
FR (1) FR2355924A1 (ja)
GB (1) GB1550215A (ja)
IT (1) IT1064910B (ja)
SE (1) SE7608792L (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997047046A1 (fr) * 1996-06-06 1997-12-11 Seiko Epson Corporation Procede de fabrication de transistor a couche mince, afficheur a cristaux liquides ainsi que dispositif electroniques produits selon ce procede
JP2014526432A (ja) * 2011-09-19 2014-10-06 ピルキントン グループ リミテッド ガラス基板上にシリカコーティングを形成するプロセス

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0047112B1 (en) * 1980-08-29 1985-11-27 Fujitsu Limited Method of forming phosphosilicate glass films
DE3266277D1 (en) * 1981-03-16 1985-10-24 Fairchild Camera Instr Co Process of forming a thin glass film on a semiconductor substrate
US4686112A (en) * 1983-01-13 1987-08-11 Rca Corporation Deposition of silicon dioxide
DE3330910A1 (de) * 1983-08-27 1985-03-07 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zum herstellen eines reaktionsgefaesses fuer kristallzuchtzwecke
GB8414878D0 (en) * 1984-06-11 1984-07-18 Gen Electric Co Plc Integrated optical waveguides
US4564532A (en) * 1985-01-07 1986-01-14 Kms Fusion, Inc. Glass-surface microcarrier for anchorage-dependent cell cultivation
JPS61214555A (ja) * 1985-03-20 1986-09-24 Hitachi Ltd 半導体装置
US4810673A (en) * 1986-09-18 1989-03-07 Texas Instruments Incorporated Oxide deposition method
US4900591A (en) * 1988-01-20 1990-02-13 The United States Of America As Represented By The Secretary Of The Air Force Method for the deposition of high quality silicon dioxide at low temperature
US5354695A (en) * 1992-04-08 1994-10-11 Leedy Glenn J Membrane dielectric isolation IC fabrication
GB8814922D0 (en) * 1988-06-23 1988-07-27 Pilkington Plc Coatings on glass
JP2626925B2 (ja) * 1990-05-23 1997-07-02 三菱電機株式会社 基板処理装置および基板処理方法
US5525550A (en) * 1991-05-21 1996-06-11 Fujitsu Limited Process for forming thin films by plasma CVD for use in the production of semiconductor devices
TW371796B (en) * 1995-09-08 1999-10-11 Semiconductor Energy Lab Co Ltd Method and apparatus for manufacturing a semiconductor device
US5915167A (en) * 1997-04-04 1999-06-22 Elm Technology Corporation Three dimensional structure memory
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US6627305B1 (en) * 1997-07-16 2003-09-30 Koninklijke Philips Electronics N.V. Substrates for large area electronic devices
US20030161949A1 (en) * 2002-02-28 2003-08-28 The Regents Of The University Of California Vapor deposition of dihalodialklysilanes
US7402897B2 (en) * 2002-08-08 2008-07-22 Elm Technology Corporation Vertical system integration
US6982196B2 (en) * 2003-11-04 2006-01-03 International Business Machines Corporation Oxidation method for altering a film structure and CMOS transistor structure formed therewith
KR100634288B1 (ko) * 2003-12-01 2006-10-16 야스히로 모리 고체물질의 표면 개질방법 및 표면 개질된 고체물질
EP2554524A1 (en) * 2011-08-02 2013-02-06 Linde Aktiengesellschaft Method for producing high transmission glass coatings

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3331716A (en) * 1962-06-04 1967-07-18 Philips Corp Method of manufacturing a semiconductor device by vapor-deposition
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
US3258359A (en) * 1963-04-08 1966-06-28 Siliconix Inc Semiconductor etch and oxidation process
US3511703A (en) * 1963-09-20 1970-05-12 Motorola Inc Method for depositing mixed oxide films containing aluminum oxide
DE1614455C3 (de) * 1967-03-16 1979-07-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen einer teils aus Siliciumoxid, teils aus Siliciumnitrid bestehenden Schutzschicht an der Oberfläche eines Halbleiterkörpers
US3481781A (en) * 1967-03-17 1969-12-02 Rca Corp Silicate glass coating of semiconductor devices
US3531696A (en) * 1967-09-30 1970-09-29 Nippon Electric Co Semiconductor device with hysteretic capacity vs. voltage characteristics
JPS5122241Y2 (ja) * 1971-03-12 1976-06-09
US3850687A (en) * 1971-05-26 1974-11-26 Rca Corp Method of densifying silicate glasses
GB1463056A (en) * 1973-01-19 1977-02-02 Thorn Lighting Ltd Electric discharge lamp

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1997047046A1 (fr) * 1996-06-06 1997-12-11 Seiko Epson Corporation Procede de fabrication de transistor a couche mince, afficheur a cristaux liquides ainsi que dispositif electroniques produits selon ce procede
US6146928A (en) * 1996-06-06 2000-11-14 Seiko Epson Corporation Method for manufacturing thin film transistor, liquid crystal display and electronic device both produced by the method
KR100381828B1 (ko) * 1996-06-06 2003-08-25 세이코 엡슨 가부시키가이샤 박막트랜지스터제조방법,그것을사용한액정표시장치및전자기기
CN100392867C (zh) * 1996-06-06 2008-06-04 精工爱普生株式会社 薄膜晶体管的制造方法、使用该方法的液晶显示装置和电子设备
JP2014526432A (ja) * 2011-09-19 2014-10-06 ピルキントン グループ リミテッド ガラス基板上にシリカコーティングを形成するプロセス

Also Published As

Publication number Publication date
JPS558950B2 (ja) 1980-03-06
FR2355924A1 (fr) 1978-01-20
DE2641387C3 (de) 1979-08-02
DE2641387B2 (de) 1978-11-16
IT1064910B (it) 1985-02-25
GB1550215A (en) 1979-08-08
DE2641387A1 (de) 1977-06-30
US4196232A (en) 1980-04-01
SE7608792L (sv) 1977-06-19

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