JPS5266884A - Process for forming film on base material - Google Patents

Process for forming film on base material

Info

Publication number
JPS5266884A
JPS5266884A JP14371375A JP14371375A JPS5266884A JP S5266884 A JPS5266884 A JP S5266884A JP 14371375 A JP14371375 A JP 14371375A JP 14371375 A JP14371375 A JP 14371375A JP S5266884 A JPS5266884 A JP S5266884A
Authority
JP
Japan
Prior art keywords
base material
forming film
film
efficientlyby
materaial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14371375A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5428313B2 (oth
Inventor
Yoshihiro Imamura
Kazushige Minegishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14371375A priority Critical patent/JPS5266884A/ja
Publication of JPS5266884A publication Critical patent/JPS5266884A/ja
Publication of JPS5428313B2 publication Critical patent/JPS5428313B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP14371375A 1975-12-01 1975-12-01 Process for forming film on base material Granted JPS5266884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14371375A JPS5266884A (en) 1975-12-01 1975-12-01 Process for forming film on base material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14371375A JPS5266884A (en) 1975-12-01 1975-12-01 Process for forming film on base material

Publications (2)

Publication Number Publication Date
JPS5266884A true JPS5266884A (en) 1977-06-02
JPS5428313B2 JPS5428313B2 (oth) 1979-09-14

Family

ID=15345237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14371375A Granted JPS5266884A (en) 1975-12-01 1975-12-01 Process for forming film on base material

Country Status (1)

Country Link
JP (1) JPS5266884A (oth)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645759A (en) * 1979-09-20 1981-04-25 Matsushita Electric Ind Co Ltd Preparation of vapor growth film
JPS5973045A (ja) * 1982-10-19 1984-04-25 Inoue Japax Res Inc 表面被覆方法
JPS61136680A (ja) * 1984-12-08 1986-06-24 Inoue Japax Res Inc 炭化珪素薄膜の形成方法
JPS62136017A (ja) * 1985-12-10 1987-06-19 Stanley Electric Co Ltd レ−ザ−励起ｃｖｄ法によるアモルフアスシリコンの製造方法
US5316970A (en) * 1990-08-23 1994-05-31 International Business Machines Corporation Generation of ionized air for semiconductor chips

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20200049866A1 (en) * 2018-08-13 2020-02-13 Chien-Chin MAI Optical film and backlight module using same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5645759A (en) * 1979-09-20 1981-04-25 Matsushita Electric Ind Co Ltd Preparation of vapor growth film
JPS5973045A (ja) * 1982-10-19 1984-04-25 Inoue Japax Res Inc 表面被覆方法
JPS61136680A (ja) * 1984-12-08 1986-06-24 Inoue Japax Res Inc 炭化珪素薄膜の形成方法
JPS62136017A (ja) * 1985-12-10 1987-06-19 Stanley Electric Co Ltd レ−ザ−励起ｃｖｄ法によるアモルフアスシリコンの製造方法
US5316970A (en) * 1990-08-23 1994-05-31 International Business Machines Corporation Generation of ionized air for semiconductor chips
US5432670A (en) * 1990-08-23 1995-07-11 International Business Machines Corporation Generation of ionized air for semiconductor chips

Also Published As

Publication number Publication date
JPS5428313B2 (oth) 1979-09-14

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