JPS526457A - Inverter circuit - Google Patents
Inverter circuitInfo
- Publication number
- JPS526457A JPS526457A JP50082757A JP8275775A JPS526457A JP S526457 A JPS526457 A JP S526457A JP 50082757 A JP50082757 A JP 50082757A JP 8275775 A JP8275775 A JP 8275775A JP S526457 A JPS526457 A JP S526457A
- Authority
- JP
- Japan
- Prior art keywords
- inverter circuit
- converter
- development
- power consumption
- high speed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09441—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type
- H03K19/09443—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors
- H03K19/09445—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET of the same canal type using a combination of enhancement and depletion transistors with active depletion transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Shift Register Type Memory (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:Development of a high speed low power consumption E-D converter.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50082757A JPS526457A (en) | 1975-07-07 | 1975-07-07 | Inverter circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50082757A JPS526457A (en) | 1975-07-07 | 1975-07-07 | Inverter circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS526457A true JPS526457A (en) | 1977-01-18 |
Family
ID=13783304
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50082757A Pending JPS526457A (en) | 1975-07-07 | 1975-07-07 | Inverter circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS526457A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54152454A (en) * | 1978-05-22 | 1979-11-30 | Nec Corp | Mos inverter buffer circuit |
JPS62216416A (en) * | 1986-03-08 | 1987-09-24 | Fujitsu Ltd | Output circuit |
JPS6356016A (en) * | 1986-08-26 | 1988-03-10 | Norio Akamatsu | Logic circuit |
US8212257B2 (en) | 2001-08-10 | 2012-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
1975
- 1975-07-07 JP JP50082757A patent/JPS526457A/en active Pending
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54152454A (en) * | 1978-05-22 | 1979-11-30 | Nec Corp | Mos inverter buffer circuit |
JPS62216416A (en) * | 1986-03-08 | 1987-09-24 | Fujitsu Ltd | Output circuit |
JPS6356016A (en) * | 1986-08-26 | 1988-03-10 | Norio Akamatsu | Logic circuit |
US8212257B2 (en) | 2001-08-10 | 2012-07-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8586991B2 (en) | 2001-08-10 | 2013-11-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US8841680B2 (en) | 2001-08-10 | 2014-09-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9343485B2 (en) | 2001-08-10 | 2016-05-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9601525B2 (en) | 2001-08-10 | 2017-03-21 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
US9893094B2 (en) | 2001-08-10 | 2018-02-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
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