JPS5261969A - Field effect transistor circuit - Google Patents

Field effect transistor circuit

Info

Publication number
JPS5261969A
JPS5261969A JP50138474A JP13847475A JPS5261969A JP S5261969 A JPS5261969 A JP S5261969A JP 50138474 A JP50138474 A JP 50138474A JP 13847475 A JP13847475 A JP 13847475A JP S5261969 A JPS5261969 A JP S5261969A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
transistor circuit
circuit
depression type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50138474A
Other languages
Japanese (ja)
Other versions
JPS5938737B2 (en
Inventor
Toshio Oura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP50138474A priority Critical patent/JPS5938737B2/en
Publication of JPS5261969A publication Critical patent/JPS5261969A/en
Publication of JPS5938737B2 publication Critical patent/JPS5938737B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/0883—Combination of depletion and enhancement field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To operate an FET circuit at a low voltage and high speed and reduce power consumption by supplying power to be supplied to a MOS circuit by way of a separately provided depression type MOS transistor in the MOS circuit using depression type MOS transistors as a load.
JP50138474A 1975-11-17 1975-11-17 Denkai Kouka Transistor Cairo Expired JPS5938737B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50138474A JPS5938737B2 (en) 1975-11-17 1975-11-17 Denkai Kouka Transistor Cairo

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50138474A JPS5938737B2 (en) 1975-11-17 1975-11-17 Denkai Kouka Transistor Cairo

Publications (2)

Publication Number Publication Date
JPS5261969A true JPS5261969A (en) 1977-05-21
JPS5938737B2 JPS5938737B2 (en) 1984-09-19

Family

ID=15222895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50138474A Expired JPS5938737B2 (en) 1975-11-17 1975-11-17 Denkai Kouka Transistor Cairo

Country Status (1)

Country Link
JP (1) JPS5938737B2 (en)

Also Published As

Publication number Publication date
JPS5938737B2 (en) 1984-09-19

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