JPS526085A - Semiconductor device and method of producing same - Google Patents

Semiconductor device and method of producing same

Info

Publication number
JPS526085A
JPS526085A JP7566076A JP7566076A JPS526085A JP S526085 A JPS526085 A JP S526085A JP 7566076 A JP7566076 A JP 7566076A JP 7566076 A JP7566076 A JP 7566076A JP S526085 A JPS526085 A JP S526085A
Authority
JP
Japan
Prior art keywords
semiconductor device
producing same
producing
same
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7566076A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5634104B2 (fr
Inventor
Yohanesu Biruherumusu Biiteru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS526085A publication Critical patent/JPS526085A/ja
Publication of JPS5634104B2 publication Critical patent/JPS5634104B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8224—Bipolar technology comprising a combination of vertical and lateral transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP7566076A 1975-06-30 1976-06-28 Semiconductor device and method of producing same Granted JPS526085A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7507733A NL7507733A (nl) 1975-06-30 1975-06-30 Halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
JPS526085A true JPS526085A (en) 1977-01-18
JPS5634104B2 JPS5634104B2 (fr) 1981-08-07

Family

ID=19824046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7566076A Granted JPS526085A (en) 1975-06-30 1976-06-28 Semiconductor device and method of producing same

Country Status (6)

Country Link
JP (1) JPS526085A (fr)
CA (1) CA1059240A (fr)
DE (1) DE2627307C3 (fr)
FR (1) FR2316741A1 (fr)
GB (1) GB1542897A (fr)
NL (1) NL7507733A (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2454698A1 (fr) * 1979-04-20 1980-11-14 Radiotechnique Compelec Procede de realisation de circuits integres a l'aide d'un masque multicouche et dispositifs obtenus par ce procede
JPS57192608A (en) * 1981-05-21 1982-11-26 Hisashi Watanabe Supporter

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1811136A1 (de) * 1968-11-27 1970-11-05 Telefunken Patent Verfahren zum Herstellen eines Planartransistors
US3766446A (en) * 1969-11-20 1973-10-16 Kogyo Gijutsuin Integrated circuits comprising lateral transistors and process for fabrication thereof
US3873989A (en) * 1973-05-07 1975-03-25 Fairchild Camera Instr Co Double-diffused, lateral transistor structure
US3829709A (en) * 1973-08-31 1974-08-13 Micro Components Corp Supply reversal protecton circuit

Also Published As

Publication number Publication date
CA1059240A (fr) 1979-07-24
GB1542897A (en) 1979-03-28
FR2316741A1 (fr) 1977-01-28
DE2627307C3 (de) 1982-03-11
DE2627307B2 (de) 1981-07-02
FR2316741B1 (fr) 1982-04-16
NL7507733A (nl) 1977-01-03
DE2627307A1 (de) 1977-01-20
JPS5634104B2 (fr) 1981-08-07

Similar Documents

Publication Publication Date Title
JPS5267582A (en) Semiconductor device and method of producing same
JPS51148362A (en) Semiconductor device and method of making the same
JPS5236477A (en) Method of producing semiconductor device
JPS51135385A (en) Method of producing semiconductor device
JPS526088A (en) Method of producing semiconductor device
JPS51120184A (en) Method of producing semiconductor device
JPS5279893A (en) Semiconductor device and method of assembling same
JPS51123581A (en) Completely dielectric isolated semiconductor device and method of producing same
JPS52113686A (en) Method of producing semiconductor device
JPS5279668A (en) Method of producing semiconductor device
JPS5260579A (en) Method of producing semiconductor device
JPS52137276A (en) Method of producing semiconductor device
JPS51147979A (en) Microelectronic device and method of producing same
JPS5234682A (en) Semiconductor device and method of producing same
JPS5364486A (en) Semiconductor and method of producing same
JPS5239377A (en) Method of manufacturing semiconductor device
JPS52139386A (en) Method of producing semiconductor device and semiconductor device
JPS51113475A (en) Integrated semiconductor circuit and method of producing same
JPS5453861A (en) Semiconductor device and method of producing same
JPS5226190A (en) Semiconductor device and method of producing same
JPS52119083A (en) Method of producing semiconductor device
JPS525287A (en) Ic device and method of producing same
GB1552021A (en) Method of producing semiconductor device
GB1553730A (en) Semiconductor device and method of manufacturing the same
JPS51134576A (en) Method of manufacturing semiconductor device