JPS5260068A - Method of making semiconductor devices - Google Patents

Method of making semiconductor devices

Info

Publication number
JPS5260068A
JPS5260068A JP51125081A JP12508176A JPS5260068A JP S5260068 A JPS5260068 A JP S5260068A JP 51125081 A JP51125081 A JP 51125081A JP 12508176 A JP12508176 A JP 12508176A JP S5260068 A JPS5260068 A JP S5260068A
Authority
JP
Japan
Prior art keywords
semiconductor devices
making semiconductor
making
devices
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51125081A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6156607B2 (OSRAM
Inventor
Kai Kuu Tsuu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NCR Voyix Corp
Original Assignee
NCR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NCR Corp filed Critical NCR Corp
Publication of JPS5260068A publication Critical patent/JPS5260068A/ja
Publication of JPS6156607B2 publication Critical patent/JPS6156607B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P30/204—
    • H10P30/212—
    • H10P32/1404—
    • H10P32/171—
    • H10W10/031—
    • H10W10/30—

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP51125081A 1975-11-10 1976-10-20 Method of making semiconductor devices Granted JPS5260068A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/630,490 US4001050A (en) 1975-11-10 1975-11-10 Method of fabricating an isolated p-n junction

Publications (2)

Publication Number Publication Date
JPS5260068A true JPS5260068A (en) 1977-05-18
JPS6156607B2 JPS6156607B2 (OSRAM) 1986-12-03

Family

ID=24527389

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51125081A Granted JPS5260068A (en) 1975-11-10 1976-10-20 Method of making semiconductor devices

Country Status (7)

Country Link
US (1) US4001050A (OSRAM)
JP (1) JPS5260068A (OSRAM)
DE (1) DE2650865A1 (OSRAM)
FR (1) FR2331153A1 (OSRAM)
GB (1) GB1522269A (OSRAM)
IT (1) IT1067265B (OSRAM)
NL (1) NL7612257A (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3044132A1 (de) * 1980-11-24 1982-07-15 Siemens AG, 1000 Berlin und 8000 München Dynamische halbleiter-speicherzelle mit wahlfreiem zugriff und verfahren zu ihrer herstellung
US5250461A (en) * 1991-05-17 1993-10-05 Delco Electronics Corporation Method for dielectrically isolating integrated circuits using doped oxide sidewalls
US5250837A (en) * 1991-05-17 1993-10-05 Delco Electronics Corporation Method for dielectrically isolating integrated circuits using doped oxide sidewalls
US6509237B2 (en) * 2001-05-11 2003-01-21 Hynix Semiconductor America, Inc. Flash memory cell fabrication sequence
US6492710B1 (en) * 2001-06-07 2002-12-10 Cypress Semiconductor Corp. Substrate isolated transistor
US6905955B2 (en) * 2003-02-04 2005-06-14 Micron Technology, Inc. Methods of forming conductive connections, and methods of forming nanofeatures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3717507A (en) * 1969-06-19 1973-02-20 Shibaura Electric Co Ltd Method of manufacturing semiconductor devices utilizing ion-implantation and arsenic diffusion
NL96608C (OSRAM) * 1969-10-03
BE759667A (fr) * 1969-12-01 1971-06-01 Philips Nv Procede permettant la fabrication d'un dispositif semiconducteur, et dispositif semiconducteur obtenu par la mise en oeuvre de ce procede
US3756861A (en) * 1972-03-13 1973-09-04 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US3856578A (en) * 1972-03-13 1974-12-24 Bell Telephone Labor Inc Bipolar transistors and method of manufacture
US3891480A (en) * 1973-10-01 1975-06-24 Honeywell Inc Bipolar semiconductor device construction
US3898105A (en) * 1973-10-25 1975-08-05 Mostek Corp Method for making FET circuits

Also Published As

Publication number Publication date
GB1522269A (en) 1978-08-23
FR2331153B1 (OSRAM) 1979-03-09
FR2331153A1 (fr) 1977-06-03
IT1067265B (it) 1985-03-16
DE2650865A1 (de) 1977-05-18
JPS6156607B2 (OSRAM) 1986-12-03
US4001050A (en) 1977-01-04
NL7612257A (nl) 1977-05-12

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