JPS5255987Y2 - - Google Patents

Info

Publication number
JPS5255987Y2
JPS5255987Y2 JP8399471U JP8399471U JPS5255987Y2 JP S5255987 Y2 JPS5255987 Y2 JP S5255987Y2 JP 8399471 U JP8399471 U JP 8399471U JP 8399471 U JP8399471 U JP 8399471U JP S5255987 Y2 JPS5255987 Y2 JP S5255987Y2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8399471U
Other languages
Japanese (ja)
Other versions
JPS4841158U (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8399471U priority Critical patent/JPS5255987Y2/ja
Priority to GB4237072A priority patent/GB1408892A/en
Priority to CA151,705A priority patent/CA1023469A/en
Priority to FR7232841A priority patent/FR2153055B1/fr
Priority to DE19722245422 priority patent/DE2245422A1/de
Priority to NL7212580A priority patent/NL7212580A/xx
Priority to IT2928872A priority patent/IT967514B/it
Publication of JPS4841158U publication Critical patent/JPS4841158U/ja
Application granted granted Critical
Publication of JPS5255987Y2 publication Critical patent/JPS5255987Y2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
    • H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42396—Gate electrodes for field effect devices for charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H01L29/76875—Two-Phase CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/51—Insulating materials associated therewith
    • H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
JP8399471U 1971-09-15 1971-09-15 Expired JPS5255987Y2 (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP8399471U JPS5255987Y2 (de) 1971-09-15 1971-09-15
GB4237072A GB1408892A (en) 1971-09-15 1972-09-12 Semiconductor devices for information storage and transfer
CA151,705A CA1023469A (en) 1971-09-15 1972-09-14 Two phase charge coupled device using dual dielectric sandwich structures
FR7232841A FR2153055B1 (de) 1971-09-15 1972-09-15
DE19722245422 DE2245422A1 (de) 1971-09-15 1972-09-15 Informationsspeicher- und uebertragungsvorrichtung
NL7212580A NL7212580A (de) 1971-09-15 1972-09-15
IT2928872A IT967514B (it) 1971-09-15 1972-09-15 Dispositivo di trasferimento di cariche

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8399471U JPS5255987Y2 (de) 1971-09-15 1971-09-15

Publications (2)

Publication Number Publication Date
JPS4841158U JPS4841158U (de) 1973-05-25
JPS5255987Y2 true JPS5255987Y2 (de) 1977-12-17

Family

ID=13818070

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8399471U Expired JPS5255987Y2 (de) 1971-09-15 1971-09-15

Country Status (7)

Country Link
JP (1) JPS5255987Y2 (de)
CA (1) CA1023469A (de)
DE (1) DE2245422A1 (de)
FR (1) FR2153055B1 (de)
GB (1) GB1408892A (de)
IT (1) IT967514B (de)
NL (1) NL7212580A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5411673B2 (de) * 1971-11-29 1979-05-16
JPS5760469Y2 (de) * 1978-06-16 1982-12-23
EP0069478A3 (de) * 1981-07-01 1983-10-05 The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and Metall-Isolator-Halbleiteranordnung
JPS5935472A (ja) * 1982-08-23 1984-02-27 Toshiba Corp 電荷転送デバイス
JPS6080272A (ja) * 1983-10-07 1985-05-08 Canon Inc 電荷転送素子
JP3635681B2 (ja) * 1994-07-15 2005-04-06 ソニー株式会社 バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法

Also Published As

Publication number Publication date
JPS4841158U (de) 1973-05-25
GB1408892A (en) 1975-10-08
NL7212580A (de) 1973-03-19
DE2245422A1 (de) 1973-03-22
IT967514B (it) 1974-03-11
FR2153055B1 (de) 1976-01-23
CA1023469A (en) 1977-12-27
FR2153055A1 (de) 1973-04-27

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