JPS5255987Y2 - - Google Patents
Info
- Publication number
- JPS5255987Y2 JPS5255987Y2 JP1971083994U JP8399471U JPS5255987Y2 JP S5255987 Y2 JPS5255987 Y2 JP S5255987Y2 JP 1971083994 U JP1971083994 U JP 1971083994U JP 8399471 U JP8399471 U JP 8399471U JP S5255987 Y2 JPS5255987 Y2 JP S5255987Y2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
- H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D44/00—Charge transfer devices
- H10D44/40—Charge-coupled devices [CCD]
- H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes
- H10D44/472—Surface-channel CCD
- H10D44/474—Two-phase CCD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/691—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator comprising metallic compounds, e.g. metal oxides or metal silicates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Semiconductor Memories (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1971083994U JPS5255987Y2 (cg-RX-API-DMAC10.html) | 1971-09-15 | 1971-09-15 | |
| GB4237072A GB1408892A (en) | 1971-09-15 | 1972-09-12 | Semiconductor devices for information storage and transfer |
| CA151,705A CA1023469A (en) | 1971-09-15 | 1972-09-14 | Two phase charge coupled device using dual dielectric sandwich structures |
| DE2245422A DE2245422A1 (de) | 1971-09-15 | 1972-09-15 | Informationsspeicher- und uebertragungsvorrichtung |
| FR7232841A FR2153055B1 (cg-RX-API-DMAC10.html) | 1971-09-15 | 1972-09-15 | |
| NL7212580A NL7212580A (cg-RX-API-DMAC10.html) | 1971-09-15 | 1972-09-15 | |
| IT7229288A IT967514B (it) | 1971-09-15 | 1972-09-15 | Dispositivo di trasferimento di cariche |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1971083994U JPS5255987Y2 (cg-RX-API-DMAC10.html) | 1971-09-15 | 1971-09-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS4841158U JPS4841158U (cg-RX-API-DMAC10.html) | 1973-05-25 |
| JPS5255987Y2 true JPS5255987Y2 (cg-RX-API-DMAC10.html) | 1977-12-17 |
Family
ID=13818070
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1971083994U Expired JPS5255987Y2 (cg-RX-API-DMAC10.html) | 1971-09-15 | 1971-09-15 |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5255987Y2 (cg-RX-API-DMAC10.html) |
| CA (1) | CA1023469A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2245422A1 (cg-RX-API-DMAC10.html) |
| FR (1) | FR2153055B1 (cg-RX-API-DMAC10.html) |
| GB (1) | GB1408892A (cg-RX-API-DMAC10.html) |
| IT (1) | IT967514B (cg-RX-API-DMAC10.html) |
| NL (1) | NL7212580A (cg-RX-API-DMAC10.html) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5411673B2 (cg-RX-API-DMAC10.html) * | 1971-11-29 | 1979-05-16 | ||
| JPS5760469Y2 (cg-RX-API-DMAC10.html) * | 1978-06-16 | 1982-12-23 | ||
| EP0069478A3 (en) * | 1981-07-01 | 1983-10-05 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Metal-insulator-semiconductor devices |
| JPS5935472A (ja) * | 1982-08-23 | 1984-02-27 | Toshiba Corp | 電荷転送デバイス |
| JPS6080272A (ja) * | 1983-10-07 | 1985-05-08 | Canon Inc | 電荷転送素子 |
| JP3635681B2 (ja) * | 1994-07-15 | 2005-04-06 | ソニー株式会社 | バイアス回路の調整方法、電荷転送装置、及び電荷検出装置とその調整方法 |
-
1971
- 1971-09-15 JP JP1971083994U patent/JPS5255987Y2/ja not_active Expired
-
1972
- 1972-09-12 GB GB4237072A patent/GB1408892A/en not_active Expired
- 1972-09-14 CA CA151,705A patent/CA1023469A/en not_active Expired
- 1972-09-15 NL NL7212580A patent/NL7212580A/xx not_active Application Discontinuation
- 1972-09-15 FR FR7232841A patent/FR2153055B1/fr not_active Expired
- 1972-09-15 DE DE2245422A patent/DE2245422A1/de active Pending
- 1972-09-15 IT IT7229288A patent/IT967514B/it active
Also Published As
| Publication number | Publication date |
|---|---|
| FR2153055A1 (cg-RX-API-DMAC10.html) | 1973-04-27 |
| FR2153055B1 (cg-RX-API-DMAC10.html) | 1976-01-23 |
| CA1023469A (en) | 1977-12-27 |
| JPS4841158U (cg-RX-API-DMAC10.html) | 1973-05-25 |
| NL7212580A (cg-RX-API-DMAC10.html) | 1973-03-19 |
| GB1408892A (en) | 1975-10-08 |
| IT967514B (it) | 1974-03-11 |
| DE2245422A1 (de) | 1973-03-22 |