JPS5254898A - Spattering ion source of microwave - Google Patents

Spattering ion source of microwave

Info

Publication number
JPS5254898A
JPS5254898A JP50129219A JP12921975A JPS5254898A JP S5254898 A JPS5254898 A JP S5254898A JP 50129219 A JP50129219 A JP 50129219A JP 12921975 A JP12921975 A JP 12921975A JP S5254898 A JPS5254898 A JP S5254898A
Authority
JP
Japan
Prior art keywords
microwave
spattering
ion source
plasma
spattered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50129219A
Other languages
Japanese (ja)
Other versions
JPS5851378B2 (en
Inventor
Katsumi Tokikuchi
Kuniyuki Sakumichi
Hideki Koike
Ichiro Shikamata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50129219A priority Critical patent/JPS5851378B2/en
Publication of JPS5254898A publication Critical patent/JPS5254898A/en
Publication of JPS5851378B2 publication Critical patent/JPS5851378B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Particle Accelerators (AREA)
  • Electron Sources, Ion Sources (AREA)

Abstract

PURPOSE: To draw out a high purity metallic ion beam by means of making a spattered metallic element to plasma by constituting the microwave-plasma binding element and the structural materials of plasma source chamber with a metal to be objected.
COPYRIGHT: (C)1977,JPO&Japio
JP50129219A 1975-10-29 1975-10-29 Micro Haspattering Ion Gen Expired JPS5851378B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50129219A JPS5851378B2 (en) 1975-10-29 1975-10-29 Micro Haspattering Ion Gen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50129219A JPS5851378B2 (en) 1975-10-29 1975-10-29 Micro Haspattering Ion Gen

Publications (2)

Publication Number Publication Date
JPS5254898A true JPS5254898A (en) 1977-05-04
JPS5851378B2 JPS5851378B2 (en) 1983-11-16

Family

ID=15004074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50129219A Expired JPS5851378B2 (en) 1975-10-29 1975-10-29 Micro Haspattering Ion Gen

Country Status (1)

Country Link
JP (1) JPS5851378B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05220353A (en) * 1991-08-26 1993-08-31 Trw Inc Method for producing continuous stream of plasma electrically neutral and uniform in density in magnetic field
JPH06283298A (en) * 1992-12-18 1994-10-07 Natl Inst For Res In Inorg Mater High frequency plasma torch used to manufacture super high purity-homogeneous raw material
US6927148B2 (en) 2002-07-15 2005-08-09 Applied Materials, Inc. Ion implantation method and method for manufacturing SOI wafer
US7064049B2 (en) 2002-07-31 2006-06-20 Applied Materials, Inv. Ion implantation method, SOI wafer manufacturing method and ion implantation system

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102491248B1 (en) 2018-03-06 2023-01-20 삼성전자주식회사 Apparatus and method for mass spectrometry, and method for anaylyzing semiconductor wafer

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05220353A (en) * 1991-08-26 1993-08-31 Trw Inc Method for producing continuous stream of plasma electrically neutral and uniform in density in magnetic field
JPH06283298A (en) * 1992-12-18 1994-10-07 Natl Inst For Res In Inorg Mater High frequency plasma torch used to manufacture super high purity-homogeneous raw material
US6927148B2 (en) 2002-07-15 2005-08-09 Applied Materials, Inc. Ion implantation method and method for manufacturing SOI wafer
US7064049B2 (en) 2002-07-31 2006-06-20 Applied Materials, Inv. Ion implantation method, SOI wafer manufacturing method and ion implantation system

Also Published As

Publication number Publication date
JPS5851378B2 (en) 1983-11-16

Similar Documents

Publication Publication Date Title
GB2033650B (en) Electron gun with astigmatic flare-reducing beam forming region
JPS5254898A (en) Spattering ion source of microwave
JPS5231653A (en) Production of hexaboride cathode
JPS5521585A (en) Metal material etching by using gas plasma
JPS5424249A (en) Scarfing method by plasma wide arc for matallic material
JPS5244155A (en) Microwave ion source for paper-strip type beam
DE3070002D1 (en) Process for operating a high stability electron gun for the shaping of materials
JPS5337378A (en) Manufacture ofr flat type electron tube
JPS526076A (en) Manufacturing process of cathode ray tube
JPS51115764A (en) Manufacturing method of a magnetron
JPS5252099A (en) Plasma ion source
JPS522373A (en) Cathode for electron gun
JPS51138158A (en) Electron gun for color crt
JPS537683A (en) Purification of pyridoxine
DE3062199D1 (en) Process for bonding a piece of copper to a piece made of a refractory metal by electron beam bombardment
JPS5426262A (en) Manufacture of contact material of cadmium-oxide-silver-alloy including brazing-filler-metal-layer
JPS5247582A (en) Acteivation and reactive vacuum evaporation method
JPS5395848A (en) Gas shielded arc welding
JPS5242066A (en) Rapid start type cathode sleeve for cathode
JPS53131893A (en) Ion source
JPS522754A (en) Method for selecting quality of material and shape of metallic object by utilization of effect of magnetic shield
JPS5259343A (en) High frequency heater
JPS524479A (en) Powder treatment process using gas ions
JPS51145541A (en) Pre-treatment for electro-phoretic coating of metal
JPS53397A (en) Metalic ion source