JPS5245880A - Process for production of field effect transistor - Google Patents

Process for production of field effect transistor

Info

Publication number
JPS5245880A
JPS5245880A JP50121602A JP12160275A JPS5245880A JP S5245880 A JPS5245880 A JP S5245880A JP 50121602 A JP50121602 A JP 50121602A JP 12160275 A JP12160275 A JP 12160275A JP S5245880 A JPS5245880 A JP S5245880A
Authority
JP
Japan
Prior art keywords
production
field effect
effect transistor
dmos
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50121602A
Other languages
Japanese (ja)
Inventor
Shinobu Fukunaga
Takeshi Yamano
Masahiko Yasuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP50121602A priority Critical patent/JPS5245880A/en
Publication of JPS5245880A publication Critical patent/JPS5245880A/en
Pending legal-status Critical Current

Links

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE: A process for production of an N-channel depression type field effect transisor (E-DMOS) which does not require ion implantation process by changing surface state density.
COPYRIGHT: (C)1977,JPO&Japio
JP50121602A 1975-10-08 1975-10-08 Process for production of field effect transistor Pending JPS5245880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50121602A JPS5245880A (en) 1975-10-08 1975-10-08 Process for production of field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50121602A JPS5245880A (en) 1975-10-08 1975-10-08 Process for production of field effect transistor

Publications (1)

Publication Number Publication Date
JPS5245880A true JPS5245880A (en) 1977-04-11

Family

ID=14815306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50121602A Pending JPS5245880A (en) 1975-10-08 1975-10-08 Process for production of field effect transistor

Country Status (1)

Country Link
JP (1) JPS5245880A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125655A (en) * 1983-01-06 1984-07-20 Citizen Watch Co Ltd Mis transistor
US5153702A (en) * 1987-06-10 1992-10-06 Hitachi, Ltd. Thin film semiconductor device and method for fabricating the same
WO2007063963A1 (en) * 2005-12-02 2007-06-07 Tohoku University Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59125655A (en) * 1983-01-06 1984-07-20 Citizen Watch Co Ltd Mis transistor
US5153702A (en) * 1987-06-10 1992-10-06 Hitachi, Ltd. Thin film semiconductor device and method for fabricating the same
WO2007063963A1 (en) * 2005-12-02 2007-06-07 Tohoku University Semiconductor device
US7800202B2 (en) 2005-12-02 2010-09-21 Tohoku University Semiconductor device
JP5170531B2 (en) * 2005-12-02 2013-03-27 国立大学法人東北大学 Semiconductor device

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