JPS524434B2 - - Google Patents

Info

Publication number
JPS524434B2
JPS524434B2 JP49068063A JP6806374A JPS524434B2 JP S524434 B2 JPS524434 B2 JP S524434B2 JP 49068063 A JP49068063 A JP 49068063A JP 6806374 A JP6806374 A JP 6806374A JP S524434 B2 JPS524434 B2 JP S524434B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP49068063A
Other versions
JPS5037393A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5037393A publication Critical patent/JPS5037393A/ja
Publication of JPS524434B2 publication Critical patent/JPS524434B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
JP49068063A 1973-06-14 1974-06-13 Expired JPS524434B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/370,051 US3931634A (en) 1973-06-14 1973-06-14 Junction-isolated monolithic integrated circuit device with means for preventing parasitic transistor action

Publications (2)

Publication Number Publication Date
JPS5037393A JPS5037393A (ja) 1975-04-08
JPS524434B2 true JPS524434B2 (ja) 1977-02-03

Family

ID=23458023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49068063A Expired JPS524434B2 (ja) 1973-06-14 1974-06-13

Country Status (8)

Country Link
US (1) US3931634A (ja)
JP (1) JPS524434B2 (ja)
BE (1) BE816307A (ja)
CA (1) CA1003123A (ja)
DE (1) DE2427307A1 (ja)
FR (1) FR2233711B1 (ja)
GB (1) GB1426544A (ja)
IT (1) IT1012356B (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4027325A (en) * 1975-01-30 1977-05-31 Sprague Electric Company Integrated full wave diode bridge rectifier
DE2638086A1 (de) * 1976-08-24 1978-03-02 Siemens Ag Integrierte stromversorgung
US4048584A (en) * 1976-11-26 1977-09-13 Motorola, Inc. Input protection circuit for cmos oscillator
US4081896A (en) * 1977-04-11 1978-04-04 Rca Corporation Method of making a substrate contact for an integrated circuit
FR2492165A1 (fr) * 1980-05-14 1982-04-16 Thomson Csf Dispositif de protection contre les courants de fuite dans des circuits integres
US4496849A (en) * 1982-02-22 1985-01-29 General Motors Corporation Power transistor protection from substrate injection
US4670669A (en) * 1984-08-13 1987-06-02 International Business Machines Corporation Charge pumping structure for a substrate bias generator
US4755697A (en) * 1985-07-17 1988-07-05 International Rectifier Corporation Bidirectional output semiconductor field effect transistor
IT1231894B (it) * 1987-10-15 1992-01-15 Sgs Microelettronica Spa Dispositivo integrato per schermare l'iniezione di cariche nel substrato.
US5051612A (en) * 1989-02-10 1991-09-24 Texas Instruments Incorporated Prevention of parasitic mechanisms in junction isolated devices
IT1231541B (it) * 1989-07-25 1991-12-17 Sgs Thomson Microelectronics Dispositivo di protezione contro gli effetti parassiti provocati da impulsi negativi di tensione di alimentazione in circuiti integrati monolitici includenti un dispositivo di potenza per il pilotaggio di un carico induttivo ed un dispositivo di controllo per detto dispositivo di potenza.
IT1252623B (it) * 1991-12-05 1995-06-19 Sgs Thomson Microelectronics Dispositivo a semiconduttore comprendente almeno un transistor di potenza e almeno un circuito di comando, con circuito di isolamento dinamico,integrati in maniera monolitica nella stessa piastrina
DE4209523C1 (ja) * 1992-03-24 1993-03-11 Siemens Ag, 8000 Muenchen, De
US5243214A (en) * 1992-04-14 1993-09-07 North American Philips Corp. Power integrated circuit with latch-up prevention
US5610079A (en) * 1995-06-19 1997-03-11 Reliance Electric Industrial Company Self-biased moat for parasitic current suppression in integrated circuits
US6737713B2 (en) * 2001-07-03 2004-05-18 Tripath Technology, Inc. Substrate connection in an integrated power circuit
JP2003229502A (ja) * 2002-02-01 2003-08-15 Mitsubishi Electric Corp 半導体装置
GB0308345D0 (en) * 2003-04-11 2003-05-14 Power Electronics Design Ct Power intregrated circuits
US7411271B1 (en) * 2007-01-19 2008-08-12 Episil Technologies Inc. Complementary metal-oxide-semiconductor field effect transistor
US7514754B2 (en) * 2007-01-19 2009-04-07 Episil Technologies Inc. Complementary metal-oxide-semiconductor transistor for avoiding a latch-up problem
US7538396B2 (en) * 2007-01-19 2009-05-26 Episil Technologies Inc. Semiconductor device and complementary metal-oxide-semiconductor field effect transistor
KR101418396B1 (ko) * 2007-11-19 2014-07-10 페어차일드코리아반도체 주식회사 전력 반도체 소자

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3541357A (en) * 1968-04-29 1970-11-17 Gen Electric Integrated circuit for alternating current operation
NL161923C (nl) * 1969-04-18 1980-03-17 Philips Nv Halfgeleiderinrichting.
BE754677A (fr) * 1969-08-11 1971-01-18 Rca Corp Circuits integres fonctionnant sur courant
US3703669A (en) * 1971-08-12 1972-11-21 Motorola Inc Photocurrent cross talk isolation

Also Published As

Publication number Publication date
FR2233711B1 (ja) 1978-02-17
CA1003123A (en) 1977-01-04
BE816307A (fr) 1974-09-30
FR2233711A1 (ja) 1975-01-10
IT1012356B (it) 1977-03-10
DE2427307A1 (de) 1975-01-16
US3931634A (en) 1976-01-06
JPS5037393A (ja) 1975-04-08
GB1426544A (en) 1976-03-03

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