JPS524426B2 - - Google Patents

Info

Publication number
JPS524426B2
JPS524426B2 JP48045315A JP4531573A JPS524426B2 JP S524426 B2 JPS524426 B2 JP S524426B2 JP 48045315 A JP48045315 A JP 48045315A JP 4531573 A JP4531573 A JP 4531573A JP S524426 B2 JPS524426 B2 JP S524426B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48045315A
Other versions
JPS49131586A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48045315A priority Critical patent/JPS524426B2/ja
Priority to US05/460,877 priority patent/US3951702A/en
Priority to GB1681074A priority patent/GB1442693A/en
Priority to FR7413820A priority patent/FR2226751B1/fr
Priority to IT50508/74A priority patent/IT1011255B/it
Priority to DE2419019A priority patent/DE2419019C3/de
Priority to CA197,827A priority patent/CA1000872A/en
Publication of JPS49131586A publication Critical patent/JPS49131586A/ja
Publication of JPS524426B2 publication Critical patent/JPS524426B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
    • H01L29/66901—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with a PN homojunction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP48045315A 1973-04-20 1973-04-20 Expired JPS524426B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP48045315A JPS524426B2 (ja) 1973-04-20 1973-04-20
US05/460,877 US3951702A (en) 1973-04-20 1974-04-15 Method of manufacturing a junction field effect transistor
GB1681074A GB1442693A (en) 1973-04-20 1974-04-17 Method of manufacturing a junction field effect transistor
FR7413820A FR2226751B1 (ja) 1973-04-20 1974-04-19
IT50508/74A IT1011255B (it) 1973-04-20 1974-04-19 Procedimento per la produzione di transistori ad effetto di campo a giunzione
DE2419019A DE2419019C3 (de) 1973-04-20 1974-04-19 Verfahren zum Herstellen eines Sperrschichtfeldeffekttransistors
CA197,827A CA1000872A (en) 1973-04-20 1974-04-19 Method of manufacturing of junction field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48045315A JPS524426B2 (ja) 1973-04-20 1973-04-20

Publications (2)

Publication Number Publication Date
JPS49131586A JPS49131586A (ja) 1974-12-17
JPS524426B2 true JPS524426B2 (ja) 1977-02-03

Family

ID=12715858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48045315A Expired JPS524426B2 (ja) 1973-04-20 1973-04-20

Country Status (7)

Country Link
US (1) US3951702A (ja)
JP (1) JPS524426B2 (ja)
CA (1) CA1000872A (ja)
DE (1) DE2419019C3 (ja)
FR (1) FR2226751B1 (ja)
GB (1) GB1442693A (ja)
IT (1) IT1011255B (ja)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846863B2 (ja) * 1977-08-25 1983-10-19 松下電器産業株式会社 半導体集積回路装置
JPS54146976A (en) * 1978-05-10 1979-11-16 Matsushita Electric Ind Co Ltd Junction type field effect transistor and its production
GB2133621B (en) * 1983-01-11 1987-02-04 Emi Ltd Junction field effect transistor
US7592841B2 (en) * 2006-05-11 2009-09-22 Dsm Solutions, Inc. Circuit configurations having four terminal JFET devices
US7646233B2 (en) * 2006-05-11 2010-01-12 Dsm Solutions, Inc. Level shifting circuit having junction field effect transistors
US20080024188A1 (en) * 2006-07-28 2008-01-31 Chou Richard K Junction field effect transistor level shifting circuit
US7764137B2 (en) * 2006-09-28 2010-07-27 Suvolta, Inc. Circuit and method for generating electrical solutions with junction field effect transistors
US7525163B2 (en) * 2006-10-31 2009-04-28 Dsm Solutions, Inc. Semiconductor device, design method and structure
US20080099796A1 (en) * 2006-11-01 2008-05-01 Vora Madhukar B Device with patterned semiconductor electrode structure and method of manufacture
US20080237657A1 (en) * 2007-03-26 2008-10-02 Dsm Solution, Inc. Signaling circuit and method for integrated circuit devices and systems
US20080265936A1 (en) * 2007-04-27 2008-10-30 Dsm Solutions, Inc. Integrated circuit switching device, structure and method of manufacture
US7692220B2 (en) * 2007-05-01 2010-04-06 Suvolta, Inc. Semiconductor device storage cell structure, method of operation, and method of manufacture
US7727821B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Image sensing cell, device, method of operation, and method of manufacture
US7629812B2 (en) * 2007-08-03 2009-12-08 Dsm Solutions, Inc. Switching circuits and methods for programmable logic devices
US8035139B2 (en) * 2007-09-02 2011-10-11 Suvolta, Inc. Dynamic random access memory having junction field effect transistor cell access device
US20090168508A1 (en) * 2007-12-31 2009-07-02 Dsm Solutions, Inc. Static random access memory having cells with junction field effect and bipolar junction transistors
US7710148B2 (en) * 2008-06-02 2010-05-04 Suvolta, Inc. Programmable switch circuit and method, method of manufacture, and devices and systems including the same
US7943971B1 (en) 2008-12-17 2011-05-17 Suvolta, Inc. Junction field effect transistor (JFET) structure having top-to-bottom gate tie and method of manufacture

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053442A (ja) * 1964-05-18
US3484309A (en) * 1964-11-09 1969-12-16 Solitron Devices Semiconductor device with a portion having a varying lateral resistivity
DE1514064A1 (de) * 1965-11-22 1970-01-22 Ibm Deutschland Verfahren zur Herstellung integrierter Halbleiterbauelemente
US3472710A (en) * 1967-04-20 1969-10-14 Teledyne Inc Method of forming a field effect transistor
US3489622A (en) * 1967-05-18 1970-01-13 Ibm Method of making high frequency transistors
FR1559611A (ja) * 1967-06-30 1969-03-14
US3538399A (en) * 1968-05-15 1970-11-03 Tektronix Inc Pn junction gated field effect transistor having buried layer of low resistivity
NL6807317A (ja) * 1968-05-23 1969-11-25
US3560278A (en) * 1968-11-29 1971-02-02 Motorola Inc Alignment process for fabricating semiconductor devices
US3717507A (en) * 1969-06-19 1973-02-20 Shibaura Electric Co Ltd Method of manufacturing semiconductor devices utilizing ion-implantation and arsenic diffusion
FR2081249A1 (en) * 1970-03-23 1971-12-03 Sescosem Junction field effect transistors - using tantlum oxide dielectric and needing fewer masks
US3697827A (en) * 1971-02-09 1972-10-10 Unitrode Corp Structure and formation of semiconductors with transverse conductivity gradients

Also Published As

Publication number Publication date
FR2226751A1 (ja) 1974-11-15
DE2419019A1 (de) 1974-10-31
JPS49131586A (ja) 1974-12-17
US3951702A (en) 1976-04-20
IT1011255B (it) 1977-01-20
CA1000872A (en) 1976-11-30
DE2419019C3 (de) 1982-12-23
DE2419019B2 (de) 1980-10-30
GB1442693A (en) 1976-07-14
FR2226751B1 (ja) 1979-02-16

Similar Documents

Publication Publication Date Title
AU476761B2 (ja)
AU465372B2 (ja)
AR201235Q (ja)
AR201231Q (ja)
AU474593B2 (ja)
AU474511B2 (ja)
FR2226751B1 (ja)
AU476714B2 (ja)
AR201229Q (ja)
AU472848B2 (ja)
AU476696B2 (ja)
AR199451A1 (ja)
AU477823B2 (ja)
AU477824B2 (ja)
AR200256A1 (ja)
AR197627A1 (ja)
AR200885A1 (ja)
AR196382A1 (ja)
AR193950A1 (ja)
AR195311A1 (ja)
AU476873B1 (ja)
AR195948A1 (ja)
AR196212Q (ja)
AR196123Q (ja)
BG20828A3 (ja)