JPS5240198B2 - - Google Patents
Info
- Publication number
- JPS5240198B2 JPS5240198B2 JP14164774A JP14164774A JPS5240198B2 JP S5240198 B2 JPS5240198 B2 JP S5240198B2 JP 14164774 A JP14164774 A JP 14164774A JP 14164774 A JP14164774 A JP 14164774A JP S5240198 B2 JPS5240198 B2 JP S5240198B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
- G11C13/048—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using other optical storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Light Receiving Elements (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US424530A US3877058A (en) | 1973-12-13 | 1973-12-13 | Radiation charge transfer memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5093084A JPS5093084A (enExample) | 1975-07-24 |
| JPS5240198B2 true JPS5240198B2 (enExample) | 1977-10-11 |
Family
ID=23682948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14164774A Expired JPS5240198B2 (enExample) | 1973-12-13 | 1974-12-11 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3877058A (enExample) |
| JP (1) | JPS5240198B2 (enExample) |
| DE (1) | DE2455798A1 (enExample) |
| FR (1) | FR2254856A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11054286B2 (en) | 2017-12-28 | 2021-07-06 | Mitutoyo Corporation | Scale and manufacturing method of the same |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4037243A (en) * | 1974-07-01 | 1977-07-19 | Motorola, Inc. | Semi conductor memory cell utilizing sensing of variations in PN junction current conrolled by stored data |
| JPS598072B2 (ja) * | 1974-10-18 | 1984-02-22 | 日本電気株式会社 | 絶縁ゲ−ト型電界効果トランジスタ回路 |
| US3987474A (en) * | 1975-01-23 | 1976-10-19 | Massachusetts Institute Of Technology | Non-volatile charge storage elements and an information storage apparatus employing such elements |
| US4041519A (en) * | 1975-02-10 | 1977-08-09 | Melen Roger D | Low transient effect switching device and method |
| US3979613A (en) * | 1975-06-18 | 1976-09-07 | Sperry Rand Corporation | Multi-terminal controlled-inversion semiconductor devices |
| US4019199A (en) * | 1975-12-22 | 1977-04-19 | International Business Machines Corporation | Highly sensitive charge-coupled photodetector including an electrically isolated reversed biased diffusion region for eliminating an inversion layer |
| US4131488A (en) * | 1975-12-31 | 1978-12-26 | Motorola, Inc. | Method of semiconductor solar energy device fabrication |
| US4070689A (en) * | 1975-12-31 | 1978-01-24 | Motorola Inc. | Semiconductor solar energy device |
| JPS5323224A (en) * | 1976-08-16 | 1978-03-03 | Hitachi Ltd | Solid pickup unit |
| US4139858A (en) * | 1977-12-12 | 1979-02-13 | Rca Corporation | Solar cell with a gallium nitride electrode |
| US4237472A (en) * | 1979-03-12 | 1980-12-02 | Rca Corporation | High performance electrically alterable read only memory (EAROM) |
| JPS6044867B2 (ja) * | 1980-04-17 | 1985-10-05 | 株式会社東芝 | 固体撮像装置 |
| EP0289642B1 (en) * | 1987-05-08 | 1991-12-04 | International Business Machines Corporation | Erasable electro-optic storage disk |
| US7692134B2 (en) * | 2008-03-24 | 2010-04-06 | Omnivision Technologies, Inc. | Variable transfer gate oxide thickness for image sensor |
| MY174333A (en) * | 2015-10-14 | 2020-04-08 | Hoon Kim | Image sensor with solar cell function |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3657614A (en) * | 1970-06-15 | 1972-04-18 | Westinghouse Electric Corp | Mis array utilizing field induced junctions |
| US3702465A (en) * | 1971-08-04 | 1972-11-07 | Westinghouse Electric Corp | Electro-optic mass memory |
| US3795806A (en) * | 1973-03-02 | 1974-03-05 | Gen Electric | Method and apparatus for sensing radiation and providing electrical readout |
-
1973
- 1973-12-13 US US424530A patent/US3877058A/en not_active Expired - Lifetime
-
1974
- 1974-11-26 DE DE19742455798 patent/DE2455798A1/de not_active Withdrawn
- 1974-12-11 JP JP14164774A patent/JPS5240198B2/ja not_active Expired
- 1974-12-13 FR FR7441160A patent/FR2254856A1/fr not_active Withdrawn
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11054286B2 (en) | 2017-12-28 | 2021-07-06 | Mitutoyo Corporation | Scale and manufacturing method of the same |
Also Published As
| Publication number | Publication date |
|---|---|
| US3877058A (en) | 1975-04-08 |
| DE2455798A1 (de) | 1975-06-19 |
| JPS5093084A (enExample) | 1975-07-24 |
| FR2254856A1 (enExample) | 1975-07-11 |