JPS523795B1 - - Google Patents

Info

Publication number
JPS523795B1
JPS523795B1 JP47056114A JP5611472A JPS523795B1 JP S523795 B1 JPS523795 B1 JP S523795B1 JP 47056114 A JP47056114 A JP 47056114A JP 5611472 A JP5611472 A JP 5611472A JP S523795 B1 JPS523795 B1 JP S523795B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47056114A
Other languages
Japanese (ja)
Other versions
JPS487625A (cg-RX-API-DMAC10.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS487625A publication Critical patent/JPS487625A/ja
Publication of JPS523795B1 publication Critical patent/JPS523795B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials
    • H10P50/692—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group IV materials or Group III-V materials characterised by their composition, e.g. multilayer masks or materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Catalysts (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
JP47056114A 1971-06-07 1972-06-07 Pending JPS523795B1 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15034571A 1971-06-07 1971-06-07

Publications (2)

Publication Number Publication Date
JPS487625A JPS487625A (cg-RX-API-DMAC10.html) 1973-01-31
JPS523795B1 true JPS523795B1 (cg-RX-API-DMAC10.html) 1977-01-29

Family

ID=22534114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47056114A Pending JPS523795B1 (cg-RX-API-DMAC10.html) 1971-06-07 1972-06-07

Country Status (7)

Country Link
US (3) US3701705A (cg-RX-API-DMAC10.html)
JP (1) JPS523795B1 (cg-RX-API-DMAC10.html)
CA (1) CA930654A (cg-RX-API-DMAC10.html)
DE (1) DE2226237C3 (cg-RX-API-DMAC10.html)
FR (1) FR2141205A5 (cg-RX-API-DMAC10.html)
GB (1) GB1389106A (cg-RX-API-DMAC10.html)
IT (1) IT959057B (cg-RX-API-DMAC10.html)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3929551A (en) * 1974-07-11 1975-12-30 Buckbee Mears Co Sealing apparatus for continuous moving web
US3954940A (en) * 1974-11-04 1976-05-04 Mcdonnell Douglas Corporation Process for surface work strain relief of electrooptic crystals
US3953265A (en) * 1975-04-28 1976-04-27 International Business Machines Corporation Meniscus-contained method of handling fluids in the manufacture of semiconductor wafers
US4064186A (en) * 1975-09-23 1977-12-20 Union Carbide Corporation Hydrogenation of styrene oxide to produce 2-phenylethanol
US4011144A (en) * 1975-12-22 1977-03-08 Western Electric Company Methods of forming metallization patterns on beam lead semiconductor devices
JPS5834449B2 (ja) * 1976-09-01 1983-07-27 東ソー株式会社 β−フエニルエチルアルコ−ルの製造法
US4085038A (en) * 1976-12-15 1978-04-18 Western Electric Co., Inc. Methods of and apparatus for sorting parts of a separated article
US4384919A (en) * 1978-11-13 1983-05-24 Sperry Corporation Method of making x-ray masks
US4222815A (en) * 1979-06-04 1980-09-16 The Babcock & Wilcox Company Isotropic etching of silicon strain gages
DE3028117C2 (de) * 1979-07-25 1984-05-10 Rca Corp., New York, N.Y. Verfahren zum Herstellen von Bildaufnahmevorrichtungen mit dünnem Substrat und Verwendung dieses Verfahrens
US4268374A (en) * 1979-08-09 1981-05-19 Bell Telephone Laboratories, Incorporated High capacity sputter-etching apparatus
US4585513A (en) * 1985-01-30 1986-04-29 Rca Corporation Method for removing glass support from semiconductor device
US4671850A (en) * 1985-08-16 1987-06-09 Micronix Corporation Mask using polyimide to support a patterned x-ray opaque layer
US5127984A (en) * 1991-05-02 1992-07-07 Avantek, Inc. Rapid wafer thinning process
DE4202194C2 (de) * 1992-01-28 1996-09-19 Fairchild Convac Gmbh Geraete Verfahren und Vorrichtung zum partiellen Entfernen von dünnen Schichten von einem Substrat
KR101232181B1 (ko) * 2010-02-03 2013-02-12 엘지디스플레이 주식회사 마스크 어셈블리

Also Published As

Publication number Publication date
FR2141205A5 (cg-RX-API-DMAC10.html) 1973-01-19
CA930654A (en) 1973-07-24
US3701705A (en) 1972-10-31
IT959057B (it) 1973-11-10
DE2226237A1 (de) 1973-01-04
US3841930A (en) 1974-10-15
DE2226237B2 (de) 1978-10-05
JPS487625A (cg-RX-API-DMAC10.html) 1973-01-31
DE2226237C3 (de) 1979-06-07
GB1389106A (en) 1975-04-03
US3823048A (en) 1974-07-09

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