JPS5236476A - Non-volatile semiconductor memory - Google Patents

Non-volatile semiconductor memory

Info

Publication number
JPS5236476A
JPS5236476A JP50113042A JP11304275A JPS5236476A JP S5236476 A JPS5236476 A JP S5236476A JP 50113042 A JP50113042 A JP 50113042A JP 11304275 A JP11304275 A JP 11304275A JP S5236476 A JPS5236476 A JP S5236476A
Authority
JP
Japan
Prior art keywords
semiconductor memory
volatile semiconductor
insulating film
read operation
control gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50113042A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5634107B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Yasuki Rai
Terutoshi Sasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP50113042A priority Critical patent/JPS5236476A/ja
Publication of JPS5236476A publication Critical patent/JPS5236476A/ja
Publication of JPS5634107B2 publication Critical patent/JPS5634107B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Non-Volatile Memory (AREA)
JP50113042A 1975-09-17 1975-09-17 Non-volatile semiconductor memory Granted JPS5236476A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50113042A JPS5236476A (en) 1975-09-17 1975-09-17 Non-volatile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50113042A JPS5236476A (en) 1975-09-17 1975-09-17 Non-volatile semiconductor memory

Publications (2)

Publication Number Publication Date
JPS5236476A true JPS5236476A (en) 1977-03-19
JPS5634107B2 JPS5634107B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-08-07

Family

ID=14602000

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50113042A Granted JPS5236476A (en) 1975-09-17 1975-09-17 Non-volatile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5236476A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180181A (en) * 1981-04-30 1982-11-06 Nec Corp Mos type semiconductor device and manufacturing method therefor
US5739568A (en) * 1994-11-28 1998-04-14 Motorola, Inc. Non-volatile memory having a cell applying to multi-bit data by double layered floating gate architecture and programming method for the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180181A (en) * 1981-04-30 1982-11-06 Nec Corp Mos type semiconductor device and manufacturing method therefor
US5739568A (en) * 1994-11-28 1998-04-14 Motorola, Inc. Non-volatile memory having a cell applying to multi-bit data by double layered floating gate architecture and programming method for the same

Also Published As

Publication number Publication date
JPS5634107B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-08-07

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