JPS5232288A - Pyroelectric field effect electromagnetic radiation detector - Google Patents
Pyroelectric field effect electromagnetic radiation detectorInfo
- Publication number
- JPS5232288A JPS5232288A JP51105090A JP10509076A JPS5232288A JP S5232288 A JPS5232288 A JP S5232288A JP 51105090 A JP51105090 A JP 51105090A JP 10509076 A JP10509076 A JP 10509076A JP S5232288 A JPS5232288 A JP S5232288A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- electromagnetic radiation
- radiation detector
- effect electromagnetic
- pyroelectric field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005670 electromagnetic radiation Effects 0.000 title 1
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/34—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using capacitors, e.g. pyroelectric capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
- H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/610,365 US4024560A (en) | 1975-09-04 | 1975-09-04 | Pyroelectric-field effect electromagnetic radiation detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5232288A true JPS5232288A (en) | 1977-03-11 |
Family
ID=24444727
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP51105090A Pending JPS5232288A (en) | 1975-09-04 | 1976-09-03 | Pyroelectric field effect electromagnetic radiation detector |
Country Status (7)
Country | Link |
---|---|
US (1) | US4024560A (ja) |
JP (1) | JPS5232288A (ja) |
BE (1) | BE845628A (ja) |
CA (1) | CA1071743A (ja) |
DE (1) | DE2637623A1 (ja) |
FR (1) | FR2323133A1 (ja) |
GB (1) | GB1561904A (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62822A (ja) * | 1985-06-27 | 1987-01-06 | Matsushita Electric Ind Co Ltd | 赤外線検出素子 |
JPS62821A (ja) * | 1985-06-26 | 1987-01-06 | Matsushita Electric Ind Co Ltd | 赤外線検出素子 |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1562287A (en) * | 1976-03-27 | 1980-03-12 | Marconi Co Ltd | Imaging device |
GB1580403A (en) * | 1977-04-19 | 1980-12-03 | Philips Electronic Associated | Pyroelectric detector circuits and devices |
JPS57104828A (en) * | 1980-12-20 | 1982-06-30 | Horiba Ltd | Composing infrared detector |
US4473836A (en) * | 1982-05-03 | 1984-09-25 | Dalsa Inc. | Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays |
US4464572A (en) * | 1982-05-06 | 1984-08-07 | The United States Of America As Represented By The United States Department Of Energy | Infrared photoemitting diode having reduced work function |
US4501967A (en) * | 1982-11-18 | 1985-02-26 | North American Philips Corporation | Broad band pyroelectric infrared detector |
US4698657A (en) * | 1984-02-10 | 1987-10-06 | Sharp Kabushiki Kaisha | FET type sensor and a method for driving the same |
DE3617910A1 (de) * | 1986-05-28 | 1987-12-03 | Siemens Ag | Matrixsensor |
KR910001878B1 (ko) * | 1986-12-16 | 1991-03-28 | 가부시기가이샤 시마즈세이사구쇼 | 열센서 및 그 제조방법 |
US4804844A (en) * | 1987-09-03 | 1989-02-14 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for enhancement of primary pyroelectric response |
CH676523A5 (ja) * | 1988-06-01 | 1991-01-31 | Cerberus Ag | |
DE3823901A1 (de) * | 1988-07-14 | 1990-02-01 | Bernd Dr Rer Nat Ploss | Verfahren zur herstellung ferroelektrischer festkoerperbauelemente |
US5182624A (en) * | 1990-08-08 | 1993-01-26 | Minnesota Mining And Manufacturing Company | Solid state electromagnetic radiation detector fet array |
US5273910A (en) * | 1990-08-08 | 1993-12-28 | Minnesota Mining And Manufacturing Company | Method of making a solid state electromagnetic radiation detector |
GB2250751B (en) * | 1990-08-24 | 1995-04-12 | Kawasaki Heavy Ind Ltd | Process for the production of dielectric thin films |
FR2670325B1 (fr) * | 1990-12-11 | 1993-01-22 | Thomson Composants Militaires | Detecteur infrarouge monolithique a materiau pyroelectrique. |
JP3831524B2 (ja) * | 1998-06-26 | 2006-10-11 | 株式会社堀場製作所 | 赤外線ガス分析計用流量検出素子とその製造方法 |
DE69936057T2 (de) * | 1998-06-19 | 2008-01-10 | Matsushita Electric Industrial Co., Ltd., Kadoma | Verfahren und anordnung zur herstellung von höckern |
US20020132360A1 (en) * | 2000-11-17 | 2002-09-19 | Flir Systems Boston, Inc. | Apparatus and methods for infrared calorimetric measurements |
US20040110301A1 (en) * | 2000-11-17 | 2004-06-10 | Neilson Andy C | Apparatus and methods for measuring reaction byproducts |
US6821787B2 (en) * | 2000-11-17 | 2004-11-23 | Thermogenic Imaging, Inc. | Apparatus and methods for infrared calorimetric measurements |
US6657358B2 (en) * | 2001-06-26 | 2003-12-02 | Hewlett-Packard Development Company, L.P. | Power supply including pyroelectric capacitor |
JP2003031579A (ja) * | 2001-07-18 | 2003-01-31 | Denso Corp | センサ及びその製造方法 |
US7439555B2 (en) * | 2003-12-05 | 2008-10-21 | International Rectifier Corporation | III-nitride semiconductor device with trench structure |
US9223186B2 (en) * | 2009-02-26 | 2015-12-29 | Corning Incorporated | Frequency converted laser sources and methods for operating frequency converted laser sources |
FR2959657B1 (fr) * | 2010-05-06 | 2012-06-22 | Commissariat Energie Atomique | Transducteur de variation temporelle de température, puce électronique incorporant ce transducteur et procédé de fabrication de cette puce |
TW201216363A (en) * | 2010-10-01 | 2012-04-16 | Univ Nat Chiao Tung | Dielectric structure, transistor and manufacturing method thereof with praseodymium oxide |
JP2012134415A (ja) * | 2010-12-24 | 2012-07-12 | Seiko Epson Corp | 検出装置、センサーデバイス及び電子機器 |
JP5533638B2 (ja) * | 2010-12-24 | 2014-06-25 | セイコーエプソン株式会社 | 検出装置、センサーデバイス及び電子機器 |
CN109786498B (zh) * | 2018-12-10 | 2021-04-06 | 华南理工大学 | 一种基于二维半导体材料的红外探测元件及其制备方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3400383A (en) * | 1964-08-05 | 1968-09-03 | Texas Instruments Inc | Trainable decision system and adaptive memory element |
DE1514495C3 (de) * | 1965-07-01 | 1974-10-17 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiteranordnung |
US3453887A (en) * | 1967-02-08 | 1969-07-08 | Corning Glass Works | Temperature change measuring device |
US3463973A (en) * | 1967-09-12 | 1969-08-26 | Rca Corp | Insulating ferroelectric gate adaptive resistor |
-
1975
- 1975-09-04 US US05/610,365 patent/US4024560A/en not_active Expired - Lifetime
-
1976
- 1976-08-13 CA CA259,094A patent/CA1071743A/en not_active Expired
- 1976-08-20 DE DE19762637623 patent/DE2637623A1/de not_active Withdrawn
- 1976-08-27 BE BE170171A patent/BE845628A/xx unknown
- 1976-08-31 FR FR7626261A patent/FR2323133A1/fr not_active Withdrawn
- 1976-09-02 GB GB36386/76A patent/GB1561904A/en not_active Expired
- 1976-09-03 JP JP51105090A patent/JPS5232288A/ja active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62821A (ja) * | 1985-06-26 | 1987-01-06 | Matsushita Electric Ind Co Ltd | 赤外線検出素子 |
JPS62822A (ja) * | 1985-06-27 | 1987-01-06 | Matsushita Electric Ind Co Ltd | 赤外線検出素子 |
Also Published As
Publication number | Publication date |
---|---|
CA1071743A (en) | 1980-02-12 |
FR2323133A1 (fr) | 1977-04-01 |
GB1561904A (en) | 1980-03-05 |
BE845628A (fr) | 1977-02-28 |
DE2637623A1 (de) | 1977-03-17 |
US4024560A (en) | 1977-05-17 |
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