JPS5230389A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5230389A
JPS5230389A JP50105989A JP10598975A JPS5230389A JP S5230389 A JPS5230389 A JP S5230389A JP 50105989 A JP50105989 A JP 50105989A JP 10598975 A JP10598975 A JP 10598975A JP S5230389 A JPS5230389 A JP S5230389A
Authority
JP
Japan
Prior art keywords
thyristor
drop
usual
doing
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50105989A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5631901B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Masami Naito
Takahiro Nagano
Takuzo Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50105989A priority Critical patent/JPS5230389A/ja
Priority to US05/716,280 priority patent/US4219832A/en
Priority to DE2639364A priority patent/DE2639364C3/de
Publication of JPS5230389A publication Critical patent/JPS5230389A/ja
Publication of JPS5631901B2 publication Critical patent/JPS5631901B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/148—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)
JP50105989A 1975-09-03 1975-09-03 Thyristor Granted JPS5230389A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50105989A JPS5230389A (en) 1975-09-03 1975-09-03 Thyristor
US05/716,280 US4219832A (en) 1975-09-03 1976-08-20 Thyristor having low on-state voltage with low areal doping emitter region
DE2639364A DE2639364C3 (de) 1975-09-03 1976-09-01 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50105989A JPS5230389A (en) 1975-09-03 1975-09-03 Thyristor

Publications (2)

Publication Number Publication Date
JPS5230389A true JPS5230389A (en) 1977-03-08
JPS5631901B2 JPS5631901B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-07-24

Family

ID=14422126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50105989A Granted JPS5230389A (en) 1975-09-03 1975-09-03 Thyristor

Country Status (3)

Country Link
US (1) US4219832A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5230389A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2639364C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5212396A (en) * 1983-11-30 1993-05-18 Kabushiki Kaisha Toshiba Conductivity modulated field effect transistor with optimized anode emitter and anode base impurity concentrations
JPS60187058A (ja) * 1984-03-07 1985-09-24 Hitachi Ltd 半導体装置
DE4218398A1 (de) * 1992-06-04 1993-12-09 Asea Brown Boveri Hochstrom-Puls-Thyristor sowie Verfahren zu seinem Betrieb
US20040061170A1 (en) * 1995-07-31 2004-04-01 Ixys Corporation Reverse blocking IGBT
US6727527B1 (en) 1995-07-31 2004-04-27 Ixys Corporation Reverse blocking IGBT
US5698454A (en) * 1995-07-31 1997-12-16 Ixys Corporation Method of making a reverse blocking IGBT

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL272752A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1960-12-20
GB1052447A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1962-09-15
US3487276A (en) * 1966-11-15 1969-12-30 Westinghouse Electric Corp Thyristor having improved operating characteristics at high temperature
US3967981A (en) * 1971-01-14 1976-07-06 Shumpei Yamazaki Method for manufacturing a semiconductor field effort transistor
US3990091A (en) * 1973-04-25 1976-11-02 Westinghouse Electric Corporation Low forward voltage drop thyristor
US3893153A (en) * 1974-01-10 1975-07-01 Westinghouse Electric Corp Light activated thyristor with high di/dt capability

Also Published As

Publication number Publication date
DE2639364B2 (de) 1979-04-12
US4219832A (en) 1980-08-26
DE2639364A1 (de) 1977-03-24
DE2639364C3 (de) 1979-12-06
JPS5631901B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-07-24

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