JPS5228887A - Semiconductive emitter device - Google Patents
Semiconductive emitter deviceInfo
- Publication number
- JPS5228887A JPS5228887A JP10450375A JP10450375A JPS5228887A JP S5228887 A JPS5228887 A JP S5228887A JP 10450375 A JP10450375 A JP 10450375A JP 10450375 A JP10450375 A JP 10450375A JP S5228887 A JPS5228887 A JP S5228887A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductive
- emitter device
- act
- layer
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50104503A JPS609355B2 (ja) | 1975-08-30 | 1975-08-30 | 半導体発光装置の製法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50104503A JPS609355B2 (ja) | 1975-08-30 | 1975-08-30 | 半導体発光装置の製法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5228887A true JPS5228887A (en) | 1977-03-04 |
JPS609355B2 JPS609355B2 (ja) | 1985-03-09 |
Family
ID=14382299
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50104503A Expired JPS609355B2 (ja) | 1975-08-30 | 1975-08-30 | 半導体発光装置の製法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS609355B2 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5419688A (en) * | 1977-07-12 | 1979-02-14 | Philips Nv | Semiconductor |
JPS5425185A (en) * | 1977-07-27 | 1979-02-24 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and its manufacture |
JPS5474686A (en) * | 1977-11-28 | 1979-06-14 | Agency Of Ind Science & Technol | Visible semiconductor laser and its manufacture |
JPS5690586A (en) * | 1979-12-21 | 1981-07-22 | Seiji Yasu | Semiconductor laser and manufacture thereof |
JPS57149788A (en) * | 1982-02-17 | 1982-09-16 | Hitachi Ltd | Injection semiconductor laser element |
JPS6239085A (ja) * | 1985-08-14 | 1987-02-20 | Sharp Corp | 光半導体素子の製造方法 |
JPH06268259A (ja) * | 1993-03-12 | 1994-09-22 | Nichia Chem Ind Ltd | 窒化ガリウム系化合物半導体発光素子 |
US6734091B2 (en) | 2002-06-28 | 2004-05-11 | Kopin Corporation | Electrode for p-type gallium nitride-based semiconductors |
US6847052B2 (en) | 2002-06-17 | 2005-01-25 | Kopin Corporation | Light-emitting diode device geometry |
US6881983B2 (en) | 2002-02-25 | 2005-04-19 | Kopin Corporation | Efficient light emitting diodes and lasers |
US6911079B2 (en) | 2002-04-19 | 2005-06-28 | Kopin Corporation | Method for reducing the resistivity of p-type II-VI and III-V semiconductors |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3495140A (en) * | 1967-10-12 | 1970-02-10 | Rca Corp | Light-emitting diodes and method of making same |
US3579055A (en) * | 1968-08-05 | 1971-05-18 | Bell & Howell Co | Semiconductor laser device and method for it{3 s fabrication |
-
1975
- 1975-08-30 JP JP50104503A patent/JPS609355B2/ja not_active Expired
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3495140A (en) * | 1967-10-12 | 1970-02-10 | Rca Corp | Light-emitting diodes and method of making same |
US3579055A (en) * | 1968-08-05 | 1971-05-18 | Bell & Howell Co | Semiconductor laser device and method for it{3 s fabrication |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5755309B2 (ja) * | 1977-07-12 | 1982-11-24 | ||
JPS5419688A (en) * | 1977-07-12 | 1979-02-14 | Philips Nv | Semiconductor |
JPS5425185A (en) * | 1977-07-27 | 1979-02-24 | Matsushita Electric Ind Co Ltd | Semiconductor laser device and its manufacture |
JPS5653238B2 (ja) * | 1977-07-27 | 1981-12-17 | ||
JPS5474686A (en) * | 1977-11-28 | 1979-06-14 | Agency Of Ind Science & Technol | Visible semiconductor laser and its manufacture |
JPS5690586A (en) * | 1979-12-21 | 1981-07-22 | Seiji Yasu | Semiconductor laser and manufacture thereof |
JPS57149788A (en) * | 1982-02-17 | 1982-09-16 | Hitachi Ltd | Injection semiconductor laser element |
JPS6239085A (ja) * | 1985-08-14 | 1987-02-20 | Sharp Corp | 光半導体素子の製造方法 |
JPH0533552B2 (ja) * | 1985-08-14 | 1993-05-19 | Sharp Kk | |
JPH06268259A (ja) * | 1993-03-12 | 1994-09-22 | Nichia Chem Ind Ltd | 窒化ガリウム系化合物半導体発光素子 |
US6881983B2 (en) | 2002-02-25 | 2005-04-19 | Kopin Corporation | Efficient light emitting diodes and lasers |
US6911079B2 (en) | 2002-04-19 | 2005-06-28 | Kopin Corporation | Method for reducing the resistivity of p-type II-VI and III-V semiconductors |
US6847052B2 (en) | 2002-06-17 | 2005-01-25 | Kopin Corporation | Light-emitting diode device geometry |
US6734091B2 (en) | 2002-06-28 | 2004-05-11 | Kopin Corporation | Electrode for p-type gallium nitride-based semiconductors |
Also Published As
Publication number | Publication date |
---|---|
JPS609355B2 (ja) | 1985-03-09 |
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