JPS5228887A - Semiconductive emitter device - Google Patents

Semiconductive emitter device

Info

Publication number
JPS5228887A
JPS5228887A JP10450375A JP10450375A JPS5228887A JP S5228887 A JPS5228887 A JP S5228887A JP 10450375 A JP10450375 A JP 10450375A JP 10450375 A JP10450375 A JP 10450375A JP S5228887 A JPS5228887 A JP S5228887A
Authority
JP
Japan
Prior art keywords
semiconductive
emitter device
act
layer
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10450375A
Other languages
English (en)
Other versions
JPS609355B2 (ja
Inventor
Hiroshi Nishi
Shigeo Osaka
Tsugio Kumai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP50104503A priority Critical patent/JPS609355B2/ja
Publication of JPS5228887A publication Critical patent/JPS5228887A/ja
Publication of JPS609355B2 publication Critical patent/JPS609355B2/ja
Expired legal-status Critical Current

Links

JP50104503A 1975-08-30 1975-08-30 半導体発光装置の製法 Expired JPS609355B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50104503A JPS609355B2 (ja) 1975-08-30 1975-08-30 半導体発光装置の製法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50104503A JPS609355B2 (ja) 1975-08-30 1975-08-30 半導体発光装置の製法

Publications (2)

Publication Number Publication Date
JPS5228887A true JPS5228887A (en) 1977-03-04
JPS609355B2 JPS609355B2 (ja) 1985-03-09

Family

ID=14382299

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50104503A Expired JPS609355B2 (ja) 1975-08-30 1975-08-30 半導体発光装置の製法

Country Status (1)

Country Link
JP (1) JPS609355B2 (ja)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS5425185A (en) * 1977-07-27 1979-02-24 Matsushita Electric Ind Co Ltd Semiconductor laser device and its manufacture
JPS5474686A (en) * 1977-11-28 1979-06-14 Agency Of Ind Science & Technol Visible semiconductor laser and its manufacture
JPS5690586A (en) * 1979-12-21 1981-07-22 Seiji Yasu Semiconductor laser and manufacture thereof
JPS57149788A (en) * 1982-02-17 1982-09-16 Hitachi Ltd Injection semiconductor laser element
JPS6239085A (ja) * 1985-08-14 1987-02-20 Sharp Corp 光半導体素子の製造方法
JPH06268259A (ja) * 1993-03-12 1994-09-22 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体発光素子
US6734091B2 (en) 2002-06-28 2004-05-11 Kopin Corporation Electrode for p-type gallium nitride-based semiconductors
US6847052B2 (en) 2002-06-17 2005-01-25 Kopin Corporation Light-emitting diode device geometry
US6881983B2 (en) 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
US6911079B2 (en) 2002-04-19 2005-06-28 Kopin Corporation Method for reducing the resistivity of p-type II-VI and III-V semiconductors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3495140A (en) * 1967-10-12 1970-02-10 Rca Corp Light-emitting diodes and method of making same
US3579055A (en) * 1968-08-05 1971-05-18 Bell & Howell Co Semiconductor laser device and method for it{3 s fabrication

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3495140A (en) * 1967-10-12 1970-02-10 Rca Corp Light-emitting diodes and method of making same
US3579055A (en) * 1968-08-05 1971-05-18 Bell & Howell Co Semiconductor laser device and method for it{3 s fabrication

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5755309B2 (ja) * 1977-07-12 1982-11-24
JPS5419688A (en) * 1977-07-12 1979-02-14 Philips Nv Semiconductor
JPS5425185A (en) * 1977-07-27 1979-02-24 Matsushita Electric Ind Co Ltd Semiconductor laser device and its manufacture
JPS5653238B2 (ja) * 1977-07-27 1981-12-17
JPS5474686A (en) * 1977-11-28 1979-06-14 Agency Of Ind Science & Technol Visible semiconductor laser and its manufacture
JPS5690586A (en) * 1979-12-21 1981-07-22 Seiji Yasu Semiconductor laser and manufacture thereof
JPS57149788A (en) * 1982-02-17 1982-09-16 Hitachi Ltd Injection semiconductor laser element
JPS6239085A (ja) * 1985-08-14 1987-02-20 Sharp Corp 光半導体素子の製造方法
JPH0533552B2 (ja) * 1985-08-14 1993-05-19 Sharp Kk
JPH06268259A (ja) * 1993-03-12 1994-09-22 Nichia Chem Ind Ltd 窒化ガリウム系化合物半導体発光素子
US6881983B2 (en) 2002-02-25 2005-04-19 Kopin Corporation Efficient light emitting diodes and lasers
US6911079B2 (en) 2002-04-19 2005-06-28 Kopin Corporation Method for reducing the resistivity of p-type II-VI and III-V semiconductors
US6847052B2 (en) 2002-06-17 2005-01-25 Kopin Corporation Light-emitting diode device geometry
US6734091B2 (en) 2002-06-28 2004-05-11 Kopin Corporation Electrode for p-type gallium nitride-based semiconductors

Also Published As

Publication number Publication date
JPS609355B2 (ja) 1985-03-09

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