JPS5227031B2 - - Google Patents

Info

Publication number
JPS5227031B2
JPS5227031B2 JP48125022A JP12502273A JPS5227031B2 JP S5227031 B2 JPS5227031 B2 JP S5227031B2 JP 48125022 A JP48125022 A JP 48125022A JP 12502273 A JP12502273 A JP 12502273A JP S5227031 B2 JPS5227031 B2 JP S5227031B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP48125022A
Other languages
Japanese (ja)
Other versions
JPS50772A (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS50772A publication Critical patent/JPS50772A/ja
Publication of JPS5227031B2 publication Critical patent/JPS5227031B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24Frequency- independent attenuators
    • H03H7/25Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H03H7/253Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
    • H03H7/255Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a PIN diode
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19Preparing inhomogeneous wafers
    • H10P90/1904Preparing vertically inhomogeneous wafers
    • H10P90/1906Preparing SOI wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/061Manufacture or treatment using SOI processes together with lateral isolation, e.g. combinations of SOI and shallow trench isolations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10Isolation regions comprising dielectric materials
    • H10W10/181Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/40Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/60Strap connectors, e.g. thick copper clips for grounding of power devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/021Manufacture or treatment of air gaps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20Air gaps

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Power Conversion In General (AREA)
  • Amplitude Modulation (AREA)
  • Attenuators (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Non-Reversible Transmitting Devices (AREA)
JP48125022A 1972-11-10 1973-11-08 Expired JPS5227031B2 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7215200A NL7215200A (https=) 1972-11-10 1972-11-10

Publications (2)

Publication Number Publication Date
JPS50772A JPS50772A (https=) 1975-01-07
JPS5227031B2 true JPS5227031B2 (https=) 1977-07-18

Family

ID=19817338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48125022A Expired JPS5227031B2 (https=) 1972-11-10 1973-11-08

Country Status (15)

Country Link
US (1) US4143383A (https=)
JP (1) JPS5227031B2 (https=)
AT (1) ATA936373A (https=)
BE (1) BE807079A (https=)
BR (1) BR7308693D0 (https=)
CA (1) CA1006274A (https=)
CH (1) CH574165A5 (https=)
DE (1) DE2353770C3 (https=)
ES (1) ES420364A1 (https=)
FR (1) FR2206589B1 (https=)
GB (1) GB1445724A (https=)
IN (1) IN140549B (https=)
IT (1) IT996919B (https=)
NL (1) NL7215200A (https=)
SE (1) SE391997B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4932640A (https=) * 1972-07-20 1974-03-25
US4050055A (en) * 1976-07-26 1977-09-20 Krautkramer-Branson, Incorporated Attenuator circuit ultrasonic testing
US4257061A (en) * 1977-10-17 1981-03-17 John Fluke Mfg. Co., Inc. Thermally isolated monolithic semiconductor die
US4275362A (en) * 1979-03-16 1981-06-23 Rca Corporation Gain controlled amplifier using a pin diode
US4500845A (en) * 1983-03-15 1985-02-19 Texas Instruments Incorporated Programmable attenuator
JPS60126643A (ja) * 1983-12-13 1985-07-06 Matsushita Electric Ind Co Ltd 印刷媒体
US4738933A (en) * 1985-08-27 1988-04-19 Fei Microwave, Inc. Monolithic PIN diode and method for its manufacture
DE3675611D1 (de) * 1985-08-31 1990-12-20 Licentia Gmbh Verfahren zum herstellen eines beidseitig kontaktierten halbleiterkoerpers.
US4786828A (en) * 1987-05-15 1988-11-22 Hoffman Charles R Bias scheme for achieving voltage independent capacitance
US6835967B2 (en) * 2003-03-25 2004-12-28 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor diodes with fin structure
WO2006038150A2 (en) * 2004-10-05 2006-04-13 Koninklijke Philips Electronics N.V. Semiconductor device and use thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT270747B (de) * 1963-12-17 1969-05-12 Western Electric Co Verfahren zum Herstellen von mechanisch abgestützten, elektrisch leitenden Anschlüssen an Halbleiterscheiben
DE1514453A1 (de) * 1965-04-26 1969-08-14 Siemens Ag Verfahren zum Herstellen von Halbleiterschaltungen
FR1540051A (fr) * 1966-09-21 1968-09-20 Rca Corp Microcircuit et son procédé de fabrication
US3475700A (en) * 1966-12-30 1969-10-28 Texas Instruments Inc Monolithic microwave duplexer switch
US3518585A (en) * 1966-12-30 1970-06-30 Texas Instruments Inc Voltage controlled a.c. signal attenuator
US3549960A (en) * 1967-12-20 1970-12-22 Massachusetts Inst Technology Thermo-photovoltaic converter having back-surface junctions
GB1259883A (en) * 1968-07-26 1972-01-12 Signetics Corp Encapsulated beam lead construction for semiconductor device and assembly and method
NL159822B (nl) * 1969-01-02 1979-03-15 Philips Nv Halfgeleiderinrichting.
JPS4828958B1 (https=) * 1969-07-22 1973-09-06
FR2071043A5 (https=) * 1969-12-16 1971-09-17 Thomson Csf
US3714473A (en) * 1971-05-12 1973-01-30 Bell Telephone Labor Inc Planar semiconductor device utilizing confined charge carrier beams
DE2203247C3 (de) * 1972-01-24 1980-02-28 Siemens Ag, 1000 Berlin Und 8000 Muenchen Halbleiterbauelement mit steuerbarer Dämpfung sowie Schaltungsanordnung zu dessen Betrieb

Also Published As

Publication number Publication date
CH574165A5 (https=) 1976-03-31
ATA936373A (de) 1979-06-15
FR2206589B1 (https=) 1978-02-24
NL7215200A (https=) 1974-05-14
ES420364A1 (es) 1976-04-16
IN140549B (https=) 1976-11-27
CA1006274A (en) 1977-03-01
FR2206589A1 (https=) 1974-06-07
SE391997B (sv) 1977-03-07
AU6232073A (en) 1975-05-15
IT996919B (it) 1975-12-10
BE807079A (nl) 1974-05-08
DE2353770C3 (de) 1982-03-25
BR7308693D0 (pt) 1974-08-22
GB1445724A (en) 1976-08-11
JPS50772A (https=) 1975-01-07
DE2353770B2 (de) 1981-07-16
US4143383A (en) 1979-03-06
DE2353770A1 (de) 1974-05-16

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