JPS5222484A - Method of producing semiconductor structure - Google Patents

Method of producing semiconductor structure

Info

Publication number
JPS5222484A
JPS5222484A JP51089293A JP8929376A JPS5222484A JP S5222484 A JPS5222484 A JP S5222484A JP 51089293 A JP51089293 A JP 51089293A JP 8929376 A JP8929376 A JP 8929376A JP S5222484 A JPS5222484 A JP S5222484A
Authority
JP
Japan
Prior art keywords
semiconductor structure
producing semiconductor
producing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP51089293A
Other languages
English (en)
Other versions
JPS5726416B2 (ja
Inventor
Aaru Sumisu Piitaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Camera and Instrument Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Camera and Instrument Corp filed Critical Fairchild Camera and Instrument Corp
Publication of JPS5222484A publication Critical patent/JPS5222484A/ja
Publication of JPS5726416B2 publication Critical patent/JPS5726416B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0114—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including vertical BJTs and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/106—Masks, special
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion

Landscapes

  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
JP51089293A 1975-08-11 1976-07-28 Method of producing semiconductor structure Granted JPS5222484A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/603,402 US4025364A (en) 1975-08-11 1975-08-11 Process for simultaneously fabricating epitaxial resistors, base resistors, and vertical transistor bases

Publications (2)

Publication Number Publication Date
JPS5222484A true JPS5222484A (en) 1977-02-19
JPS5726416B2 JPS5726416B2 (ja) 1982-06-04

Family

ID=24415283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51089293A Granted JPS5222484A (en) 1975-08-11 1976-07-28 Method of producing semiconductor structure

Country Status (2)

Country Link
US (1) US4025364A (ja)
JP (1) JPS5222484A (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2341943A1 (fr) * 1976-02-20 1977-09-16 Radiotechnique Compelec Procede de realisation de transistors par implantation ionique
US4069068A (en) * 1976-07-02 1978-01-17 International Business Machines Corporation Semiconductor fabrication method for improved device yield by minimizing pipes between common conductivity type regions
US4133701A (en) * 1977-06-29 1979-01-09 General Motors Corporation Selective enhancement of phosphorus diffusion by implanting halogen ions
SU773793A1 (ru) * 1977-11-02 1980-10-23 Предприятие П/Я -6429 Способ изготовлени полупроводниковых интегральных бипол рных схем
US4155778A (en) * 1977-12-30 1979-05-22 International Business Machines Corporation Forming semiconductor devices having ion implanted and diffused regions
US4249962A (en) * 1979-09-11 1981-02-10 Western Electric Company, Inc. Method of removing contaminating impurities from device areas in a semiconductor wafer
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
US4472873A (en) 1981-10-22 1984-09-25 Fairchild Camera And Instrument Corporation Method for forming submicron bipolar transistors without epitaxial growth and the resulting structure
US4507848A (en) * 1982-11-22 1985-04-02 Fairchild Camera & Instrument Corporation Control of substrate injection in lateral bipolar transistors
US5210042A (en) * 1983-09-26 1993-05-11 Fujitsu Limited Method of producing semiconductor device
JPS60130844A (ja) * 1983-12-20 1985-07-12 Toshiba Corp 半導体装置の製造方法
US4898837A (en) * 1987-11-19 1990-02-06 Sanyo Electric Co., Ltd. Method of fabricating a semiconductor integrated circuit
JPH061422U (ja) * 1992-06-09 1994-01-11 帝金株式会社 柵形成装置
SE514707C2 (sv) * 1998-11-04 2001-04-02 Ericsson Telefon Ab L M Metod för halvledartillverkning
US7564083B2 (en) * 2005-02-25 2009-07-21 United Microelectronics Corp. Active pixel sensor

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383567A (en) * 1965-09-15 1968-05-14 Ion Physics Corp Solid state translating device comprising irradiation implanted conductivity ions
GB1355806A (en) * 1970-12-09 1974-06-05 Mullard Ltd Methods of manufacturing a semiconductor device
US3648125A (en) * 1971-02-02 1972-03-07 Fairchild Camera Instr Co Method of fabricating integrated circuits with oxidized isolation and the resulting structure
US3756862A (en) * 1971-12-21 1973-09-04 Ibm Proton enhanced diffusion methods
US3756861A (en) * 1972-03-13 1973-09-04 Bell Telephone Labor Inc Bipolar transistors and method of manufacture

Also Published As

Publication number Publication date
JPS5726416B2 (ja) 1982-06-04
US4025364A (en) 1977-05-24

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