JPS5246340A - Method of producing porous silicon - Google Patents

Method of producing porous silicon

Info

Publication number
JPS5246340A
JPS5246340A JP12355375A JP12355375A JPS5246340A JP S5246340 A JPS5246340 A JP S5246340A JP 12355375 A JP12355375 A JP 12355375A JP 12355375 A JP12355375 A JP 12355375A JP S5246340 A JPS5246340 A JP S5246340A
Authority
JP
Japan
Prior art keywords
porous silicon
producing porous
producing
silicon
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12355375A
Other languages
Japanese (ja)
Other versions
JPS5826660B2 (en
Inventor
Kazutoshi Nagano
Kousei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP50123553A priority Critical patent/JPS5826660B2/en
Publication of JPS5246340A publication Critical patent/JPS5246340A/en
Publication of JPS5826660B2 publication Critical patent/JPS5826660B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Element Separation (AREA)
  • Weting (AREA)
JP50123553A 1975-10-13 1975-10-13 Takoushitsu Silicon Noseizouhouhou Expired JPS5826660B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50123553A JPS5826660B2 (en) 1975-10-13 1975-10-13 Takoushitsu Silicon Noseizouhouhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50123553A JPS5826660B2 (en) 1975-10-13 1975-10-13 Takoushitsu Silicon Noseizouhouhou

Publications (2)

Publication Number Publication Date
JPS5246340A true JPS5246340A (en) 1977-04-13
JPS5826660B2 JPS5826660B2 (en) 1983-06-04

Family

ID=14863440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50123553A Expired JPS5826660B2 (en) 1975-10-13 1975-10-13 Takoushitsu Silicon Noseizouhouhou

Country Status (1)

Country Link
JP (1) JPS5826660B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730333A (en) * 1980-05-30 1982-02-18 Ibm Method of electrochemically etching semiconductor
WO1998056036A1 (en) * 1997-06-06 1998-12-10 Kabushiki Kaisha Tokai Rika Denki Seisakusho Semiconductor device and method of anodization for the semiconductor device

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6049422U (en) * 1983-09-14 1985-04-06 東京瓦斯株式会社 Tester for inspecting gas appliances and gas supply equipment

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123581A (en) * 1975-04-14 1976-10-28 Ibm Completely dielectric isolated semiconductor device and method of producing same

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123581A (en) * 1975-04-14 1976-10-28 Ibm Completely dielectric isolated semiconductor device and method of producing same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5730333A (en) * 1980-05-30 1982-02-18 Ibm Method of electrochemically etching semiconductor
WO1998056036A1 (en) * 1997-06-06 1998-12-10 Kabushiki Kaisha Tokai Rika Denki Seisakusho Semiconductor device and method of anodization for the semiconductor device
EP0987743A4 (en) * 1997-06-06 2000-07-19 Tokai Rika Co Ltd Semiconductor device and method of anodization for the semiconductor device
US6362079B1 (en) 1997-06-06 2002-03-26 Kabushiki Kaisha Tokai Rika Denki Seisakusho Semiconductor device and method of anodization for the semiconductor device

Also Published As

Publication number Publication date
JPS5826660B2 (en) 1983-06-04

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