JPS5221786A - Production process of semiconductor unit - Google Patents

Production process of semiconductor unit

Info

Publication number
JPS5221786A
JPS5221786A JP9749175A JP9749175A JPS5221786A JP S5221786 A JPS5221786 A JP S5221786A JP 9749175 A JP9749175 A JP 9749175A JP 9749175 A JP9749175 A JP 9749175A JP S5221786 A JPS5221786 A JP S5221786A
Authority
JP
Japan
Prior art keywords
production process
semiconductor unit
reack
caused
high temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9749175A
Other languages
Japanese (ja)
Other versions
JPS594855B2 (en
Inventor
Masahiro Iiri
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP9749175A priority Critical patent/JPS594855B2/en
Publication of JPS5221786A publication Critical patent/JPS5221786A/en
Publication of JPS594855B2 publication Critical patent/JPS594855B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To prevent outbreaks of stage cutting and reack caused from multilayer winding through applying glass film including P2O3 and B2O5 to perform high temperature treatment and level formation.
COPYRIGHT: (C)1977,JPO&Japio
JP9749175A 1975-08-13 1975-08-13 Manufacturing method of semiconductor device Expired JPS594855B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9749175A JPS594855B2 (en) 1975-08-13 1975-08-13 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9749175A JPS594855B2 (en) 1975-08-13 1975-08-13 Manufacturing method of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5221786A true JPS5221786A (en) 1977-02-18
JPS594855B2 JPS594855B2 (en) 1984-02-01

Family

ID=14193732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9749175A Expired JPS594855B2 (en) 1975-08-13 1975-08-13 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS594855B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690196A (en) * 1979-12-19 1981-07-22 Chugoku Kogyo Kk Bottom inspecting device for high pressure gas vessel
US4962063A (en) * 1988-11-10 1990-10-09 Applied Materials, Inc. Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing
US5112776A (en) * 1988-11-10 1992-05-12 Applied Materials, Inc. Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690196A (en) * 1979-12-19 1981-07-22 Chugoku Kogyo Kk Bottom inspecting device for high pressure gas vessel
US4962063A (en) * 1988-11-10 1990-10-09 Applied Materials, Inc. Multistep planarized chemical vapor deposition process with the use of low melting inorganic material for flowing while depositing
US5112776A (en) * 1988-11-10 1992-05-12 Applied Materials, Inc. Method for planarizing an integrated circuit structure using low melting inorganic material and flowing while depositing

Also Published As

Publication number Publication date
JPS594855B2 (en) 1984-02-01

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