JPS5220306A - Apparatus for zone melting of semiconductor rod without crucible - Google Patents

Apparatus for zone melting of semiconductor rod without crucible

Info

Publication number
JPS5220306A
JPS5220306A JP9088576A JP9088576A JPS5220306A JP S5220306 A JPS5220306 A JP S5220306A JP 9088576 A JP9088576 A JP 9088576A JP 9088576 A JP9088576 A JP 9088576A JP S5220306 A JPS5220306 A JP S5220306A
Authority
JP
Japan
Prior art keywords
crucible
zone melting
semiconductor rod
semiconductor
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9088576A
Other languages
English (en)
Japanese (ja)
Inventor
Shiyutouuto Hansu
Torakishingaa Maria
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5220306A publication Critical patent/JPS5220306A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • C30B13/30—Stabilisation or shape controlling of the molten zone, e.g. by concentrators, by electromagnetic fields; Controlling the section of the crystal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP9088576A 1975-08-04 1976-07-29 Apparatus for zone melting of semiconductor rod without crucible Pending JPS5220306A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752534752 DE2534752B2 (de) 1975-08-04 1975-08-04 Vorrichtung zum tiegelfreien zonenschmelzen eines halbleitermaterialstabes mit einer fernsehkamera zur optischen ueberwachung der erstarrungsfront

Publications (1)

Publication Number Publication Date
JPS5220306A true JPS5220306A (en) 1977-02-16

Family

ID=5953176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9088576A Pending JPS5220306A (en) 1975-08-04 1976-07-29 Apparatus for zone melting of semiconductor rod without crucible

Country Status (3)

Country Link
JP (1) JPS5220306A (enExample)
DE (1) DE2534752B2 (enExample)
DK (1) DK249676A (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2166884B (en) * 1984-11-09 1988-07-13 Ferranti Plc Radiation path axis directing system

Also Published As

Publication number Publication date
DE2534752C3 (enExample) 1978-10-05
DE2534752A1 (de) 1977-02-10
DK249676A (da) 1977-02-05
DE2534752B2 (de) 1978-02-02

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