|
JP3613594B2
(ja)
|
1993-08-19 |
2005-01-26 |
株式会社ルネサステクノロジ |
半導体素子およびこれを用いた半導体記憶装置
|
|
US5508543A
(en)
*
|
1994-04-29 |
1996-04-16 |
International Business Machines Corporation |
Low voltage memory
|
|
US5768192A
(en)
*
|
1996-07-23 |
1998-06-16 |
Saifun Semiconductors, Ltd. |
Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
|
|
IL125604A
(en)
|
1997-07-30 |
2004-03-28 |
Saifun Semiconductors Ltd |
Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
|
|
US6768165B1
(en)
|
1997-08-01 |
2004-07-27 |
Saifun Semiconductors Ltd. |
Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
|
|
FR2772989B1
(fr)
*
|
1997-12-19 |
2003-06-06 |
Commissariat Energie Atomique |
Dispositif de memoire multiniveaux a blocage de coulomb, procede de fabrication et procede de lecture/ecriture/ effacement d'un tel dispositif
|
|
JP4538693B2
(ja)
*
|
1998-01-26 |
2010-09-08 |
ソニー株式会社 |
メモリ素子およびその製造方法
|
|
JPH11214640A
(ja)
|
1998-01-28 |
1999-08-06 |
Hitachi Ltd |
半導体記憶素子、半導体記憶装置とその制御方法
|
|
US6040605A
(en)
*
|
1998-01-28 |
2000-03-21 |
Hitachi, Ltd. |
Semiconductor memory device
|
|
US6348711B1
(en)
|
1998-05-20 |
2002-02-19 |
Saifun Semiconductors Ltd. |
NROM cell with self-aligned programming and erasure areas
|
|
US6215148B1
(en)
|
1998-05-20 |
2001-04-10 |
Saifun Semiconductors Ltd. |
NROM cell with improved programming, erasing and cycling
|
|
US6429063B1
(en)
|
1999-10-26 |
2002-08-06 |
Saifun Semiconductors Ltd. |
NROM cell with generally decoupled primary and secondary injection
|
|
US6490204B2
(en)
|
2000-05-04 |
2002-12-03 |
Saifun Semiconductors Ltd. |
Programming and erasing methods for a reference cell of an NROM array
|
|
US6396741B1
(en)
|
2000-05-04 |
2002-05-28 |
Saifun Semiconductors Ltd. |
Programming of nonvolatile memory cells
|
|
US6928001B2
(en)
|
2000-12-07 |
2005-08-09 |
Saifun Semiconductors Ltd. |
Programming and erasing methods for a non-volatile memory cell
|
|
US6614692B2
(en)
|
2001-01-18 |
2003-09-02 |
Saifun Semiconductors Ltd. |
EEPROM array and method for operation thereof
|
|
US6584017B2
(en)
|
2001-04-05 |
2003-06-24 |
Saifun Semiconductors Ltd. |
Method for programming a reference cell
|
|
US7098107B2
(en)
|
2001-11-19 |
2006-08-29 |
Saifun Semiconductor Ltd. |
Protective layer in memory device and method therefor
|
|
US6583007B1
(en)
|
2001-12-20 |
2003-06-24 |
Saifun Semiconductors Ltd. |
Reducing secondary injection effects
|
|
US6700818B2
(en)
|
2002-01-31 |
2004-03-02 |
Saifun Semiconductors Ltd. |
Method for operating a memory device
|
|
US6917544B2
(en)
|
2002-07-10 |
2005-07-12 |
Saifun Semiconductors Ltd. |
Multiple use memory chip
|
|
US6826107B2
(en)
|
2002-08-01 |
2004-11-30 |
Saifun Semiconductors Ltd. |
High voltage insertion in flash memory cards
|
|
US7136304B2
(en)
|
2002-10-29 |
2006-11-14 |
Saifun Semiconductor Ltd |
Method, system and circuit for programming a non-volatile memory array
|
|
US7178004B2
(en)
|
2003-01-31 |
2007-02-13 |
Yan Polansky |
Memory array programming circuit and a method for using the circuit
|
|
US7142464B2
(en)
|
2003-04-29 |
2006-11-28 |
Saifun Semiconductors Ltd. |
Apparatus and methods for multi-level sensing in a memory array
|
|
US7123532B2
(en)
|
2003-09-16 |
2006-10-17 |
Saifun Semiconductors Ltd. |
Operating array cells with matched reference cells
|
|
US7317633B2
(en)
|
2004-07-06 |
2008-01-08 |
Saifun Semiconductors Ltd |
Protection of NROM devices from charge damage
|
|
US7095655B2
(en)
|
2004-08-12 |
2006-08-22 |
Saifun Semiconductors Ltd. |
Dynamic matching of signal path and reference path for sensing
|
|
US7638850B2
(en)
|
2004-10-14 |
2009-12-29 |
Saifun Semiconductors Ltd. |
Non-volatile memory structure and method of fabrication
|
|
EP1684307A1
(en)
|
2005-01-19 |
2006-07-26 |
Saifun Semiconductors Ltd. |
Method, circuit and systems for erasing one or more non-volatile memory cells
|
|
US8053812B2
(en)
|
2005-03-17 |
2011-11-08 |
Spansion Israel Ltd |
Contact in planar NROM technology
|
|
EP1746645A3
(en)
|
2005-07-18 |
2009-01-21 |
Saifun Semiconductors Ltd. |
Memory array with sub-minimum feature size word line spacing and method of fabrication
|
|
US7668017B2
(en)
|
2005-08-17 |
2010-02-23 |
Saifun Semiconductors Ltd. |
Method of erasing non-volatile memory cells
|
|
US7221138B2
(en)
|
2005-09-27 |
2007-05-22 |
Saifun Semiconductors Ltd |
Method and apparatus for measuring charge pump output current
|
|
US7352627B2
(en)
|
2006-01-03 |
2008-04-01 |
Saifon Semiconductors Ltd. |
Method, system, and circuit for operating a non-volatile memory array
|
|
US7808818B2
(en)
|
2006-01-12 |
2010-10-05 |
Saifun Semiconductors Ltd. |
Secondary injection for NROM
|
|
US7692961B2
(en)
|
2006-02-21 |
2010-04-06 |
Saifun Semiconductors Ltd. |
Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
|
|
US7760554B2
(en)
|
2006-02-21 |
2010-07-20 |
Saifun Semiconductors Ltd. |
NROM non-volatile memory and mode of operation
|
|
US8253452B2
(en)
|
2006-02-21 |
2012-08-28 |
Spansion Israel Ltd |
Circuit and method for powering up an integrated circuit and an integrated circuit utilizing same
|
|
US7638835B2
(en)
|
2006-02-28 |
2009-12-29 |
Saifun Semiconductors Ltd. |
Double density NROM with nitride strips (DDNS)
|
|
US7701779B2
(en)
|
2006-04-27 |
2010-04-20 |
Sajfun Semiconductors Ltd. |
Method for programming a reference cell
|
|
US7605579B2
(en)
|
2006-09-18 |
2009-10-20 |
Saifun Semiconductors Ltd. |
Measuring and controlling current consumption and output current of charge pumps
|
|
FR3129342B1
(fr)
|
2021-11-19 |
2023-10-06 |
Psa Automobiles Sa |
Procédé de sécurisation de l’immobilisation d’un véhicule automobile à la suite d’une commande de freinage du véhicule.
|