JPS5217771A - Charge transfer device - Google Patents

Charge transfer device

Info

Publication number
JPS5217771A
JPS5217771A JP50093746A JP9374675A JPS5217771A JP S5217771 A JPS5217771 A JP S5217771A JP 50093746 A JP50093746 A JP 50093746A JP 9374675 A JP9374675 A JP 9374675A JP S5217771 A JPS5217771 A JP S5217771A
Authority
JP
Japan
Prior art keywords
charge transfer
transfer device
potential
domain
stopper
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50093746A
Other languages
English (en)
Other versions
JPS5724666B2 (ja
Inventor
Yoshiaki Hagiwara
Hiroshi Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP50093746A priority Critical patent/JPS5217771A/ja
Priority to US05/703,792 priority patent/US4064524A/en
Priority to GB31068/76A priority patent/GB1531889A/en
Priority to CA257,839A priority patent/CA1072674A/en
Priority to FR7623248A priority patent/FR2319955A1/fr
Priority to DE2634312A priority patent/DE2634312C2/de
Priority to NL7608590A priority patent/NL7608590A/xx
Publication of JPS5217771A publication Critical patent/JPS5217771A/ja
Priority to US06/104,270 priority patent/USRE30917E/en
Publication of JPS5724666B2 publication Critical patent/JPS5724666B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0646—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1062—Channel region of field-effect devices of charge coupled devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Electromagnetism (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP50093746A 1975-07-31 1975-07-31 Charge transfer device Granted JPS5217771A (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP50093746A JPS5217771A (en) 1975-07-31 1975-07-31 Charge transfer device
US05/703,792 US4064524A (en) 1975-07-31 1976-07-09 Two-phase charge transfer device image sensor
GB31068/76A GB1531889A (en) 1975-07-31 1976-07-26 Charge transfer devices
CA257,839A CA1072674A (en) 1975-07-31 1976-07-27 Two phase charge transfer device with channel stopper regions
FR7623248A FR2319955A1 (fr) 1975-07-31 1976-07-29 Dispositif a couplage de charge
DE2634312A DE2634312C2 (de) 1975-07-31 1976-07-30 Mit zweiphasigen Taktsignalen betreibbare CCD-Vorrichtung
NL7608590A NL7608590A (nl) 1975-07-31 1976-08-02 Ladingsomzetelement.
US06/104,270 USRE30917E (en) 1975-07-31 1979-12-17 Two-phase charge transfer device image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50093746A JPS5217771A (en) 1975-07-31 1975-07-31 Charge transfer device

Publications (2)

Publication Number Publication Date
JPS5217771A true JPS5217771A (en) 1977-02-09
JPS5724666B2 JPS5724666B2 (ja) 1982-05-25

Family

ID=14090976

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50093746A Granted JPS5217771A (en) 1975-07-31 1975-07-31 Charge transfer device

Country Status (7)

Country Link
US (2) US4064524A (ja)
JP (1) JPS5217771A (ja)
CA (1) CA1072674A (ja)
DE (1) DE2634312C2 (ja)
FR (1) FR2319955A1 (ja)
GB (1) GB1531889A (ja)
NL (1) NL7608590A (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152980A (en) * 1978-05-24 1979-12-01 Fujitsu Ltd Charge transfer device
JPS5731248U (ja) * 1980-07-29 1982-02-18
JPS6145971U (ja) * 1984-08-29 1986-03-27 三和体育製販株式会社 ゴルフ練習用マツト
JPS6297676U (ja) * 1985-12-09 1987-06-22
JPH0315556U (ja) * 1989-04-27 1991-02-15
JPH03259570A (ja) * 1990-03-09 1991-11-19 Mitsubishi Electric Corp 電荷転送素子およびその製造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS606101B2 (ja) * 1976-10-14 1985-02-15 ソニー株式会社 電荷転送装置の製法
CA1138992A (en) * 1978-06-02 1983-01-04 Sony Corporation Charge transfer device
US4291239A (en) * 1980-02-25 1981-09-22 Rca Corporation Architecture line-transfer CCD imagers
US4987466A (en) * 1988-06-07 1991-01-22 Kabushiki Kaisha Toshiba Solid state image sensor
JP3150050B2 (ja) * 1995-03-30 2001-03-26 日本電気株式会社 電荷結合装置およびその製造方法
JP3248470B2 (ja) * 1997-11-21 2002-01-21 日本電気株式会社 電荷転送装置および電荷転送装置の製造方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3816769A (en) * 1969-12-17 1974-06-11 Integrated Photomatrix Ltd Method and circuit element for the selective charging of a semiconductor diffusion region
GB1437328A (en) * 1972-09-25 1976-05-26 Rca Corp Sensors having recycling means
US3826926A (en) * 1972-11-29 1974-07-30 Westinghouse Electric Corp Charge coupled device area imaging array
US3898685A (en) * 1973-04-03 1975-08-05 Gen Electric Charge coupled imaging device with separate sensing and shift-out arrays
US3995302A (en) * 1973-05-07 1976-11-30 Fairchild Camera And Instrument Corporation Transfer gate-less photosensor configuration
DE2338388C2 (de) 1973-07-28 1982-04-15 Ibm Deutschland Gmbh, 7000 Stuttgart Feldeffekt-Halbleiteranordnung
NL7311600A (nl) * 1973-08-23 1975-02-25 Philips Nv Ladingsgekoppelde inrichting.
US3896474A (en) * 1973-09-10 1975-07-22 Fairchild Camera Instr Co Charge coupled area imaging device with column anti-blooming control
US3883437A (en) * 1974-01-25 1975-05-13 Hughes Aircraft Co Monolithic IR detector arrays with direct injection charge coupled device readout
US3983573A (en) * 1974-03-12 1976-09-28 Nippon Electric Company, Ltd. Charge-coupled linear image sensing device
US3971003A (en) * 1974-11-18 1976-07-20 Rca Corporation Charge coupled device imager
JPS5937629B2 (ja) * 1975-01-30 1984-09-11 ソニー株式会社 固体撮像体
JPS5325373A (en) * 1976-08-20 1978-03-09 Sony Corp Production of charge transfer device
JPS606101B2 (ja) * 1976-10-14 1985-02-15 ソニー株式会社 電荷転送装置の製法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54152980A (en) * 1978-05-24 1979-12-01 Fujitsu Ltd Charge transfer device
JPS5819146B2 (ja) * 1978-05-24 1983-04-16 富士通株式会社 電荷転送装置
JPS5731248U (ja) * 1980-07-29 1982-02-18
JPS6310360Y2 (ja) * 1980-07-29 1988-03-28
JPS6145971U (ja) * 1984-08-29 1986-03-27 三和体育製販株式会社 ゴルフ練習用マツト
JPS6297676U (ja) * 1985-12-09 1987-06-22
JPH0315556U (ja) * 1989-04-27 1991-02-15
JPH03259570A (ja) * 1990-03-09 1991-11-19 Mitsubishi Electric Corp 電荷転送素子およびその製造方法

Also Published As

Publication number Publication date
US4064524A (en) 1977-12-20
FR2319955B1 (ja) 1982-10-22
DE2634312C2 (de) 1985-07-04
DE2634312A1 (de) 1977-02-17
USRE30917E (en) 1982-04-27
JPS5724666B2 (ja) 1982-05-25
NL7608590A (nl) 1977-02-02
FR2319955A1 (fr) 1977-02-25
GB1531889A (en) 1978-11-08
CA1072674A (en) 1980-02-26

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