JPS5217719B1 - - Google Patents
Info
- Publication number
- JPS5217719B1 JPS5217719B1 JP46063098A JP6309871A JPS5217719B1 JP S5217719 B1 JPS5217719 B1 JP S5217719B1 JP 46063098 A JP46063098 A JP 46063098A JP 6309871 A JP6309871 A JP 6309871A JP S5217719 B1 JPS5217719 B1 JP S5217719B1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/67—Complementary BJTs
- H10D84/673—Vertical complementary BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
- H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
- H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/037—Diffusion-deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/157—Special diffusion and profiles
Landscapes
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US6920570A | 1970-09-03 | 1970-09-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5217719B1 true JPS5217719B1 (enExample) | 1977-05-17 |
Family
ID=22087408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP46063098A Pending JPS5217719B1 (enExample) | 1970-09-03 | 1971-08-20 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3730786A (enExample) |
| JP (1) | JPS5217719B1 (enExample) |
| DE (1) | DE2136195A1 (enExample) |
| FR (1) | FR2105174B1 (enExample) |
| GB (1) | GB1303236A (enExample) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5392392U (enExample) * | 1977-12-22 | 1978-07-28 | ||
| US4485552A (en) * | 1980-01-18 | 1984-12-04 | International Business Machines Corporation | Complementary transistor structure and method for manufacture |
| US4357622A (en) * | 1980-01-18 | 1982-11-02 | International Business Machines Corporation | Complementary transistor structure |
| US4339767A (en) * | 1980-05-05 | 1982-07-13 | International Business Machines Corporation | High performance PNP and NPN transistor structure |
| DE3361832D1 (en) * | 1982-04-19 | 1986-02-27 | Matsushita Electric Industrial Co Ltd | Semiconductor ic and method of making the same |
| US4719185A (en) * | 1986-04-28 | 1988-01-12 | International Business Machines Corporation | Method of making shallow junction complementary vertical bipolar transistor pair |
| US4951115A (en) * | 1989-03-06 | 1990-08-21 | International Business Machines Corp. | Complementary transistor structure and method for manufacture |
| US5141881A (en) * | 1989-04-20 | 1992-08-25 | Sanyo Electric Co., Ltd. | Method for manufacturing a semiconductor integrated circuit |
| US4997775A (en) * | 1990-02-26 | 1991-03-05 | Cook Robert K | Method for forming a complementary bipolar transistor structure including a self-aligned vertical PNP transistor |
| KR100331296B1 (ko) * | 1995-12-20 | 2002-06-20 | 클라크 3세 존 엠. | 에피택셜 핀치 저항기 및 그 형성 방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1529175A (fr) * | 1966-06-24 | 1968-06-14 | Philips Nv | Procédé pour introduire par diffusion de l'arsenic dans des corps de silicium |
| US3502951A (en) * | 1968-01-02 | 1970-03-24 | Singer Co | Monolithic complementary semiconductor device |
| FR1583864A (enExample) * | 1968-05-14 | 1969-12-05 |
-
1970
- 1970-09-03 US US00069205A patent/US3730786A/en not_active Expired - Lifetime
-
1971
- 1971-07-06 FR FR7126002A patent/FR2105174B1/fr not_active Expired
- 1971-07-20 DE DE19712136195 patent/DE2136195A1/de active Pending
- 1971-08-20 JP JP46063098A patent/JPS5217719B1/ja active Pending
- 1971-08-25 GB GB3985971A patent/GB1303236A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1303236A (enExample) | 1973-01-17 |
| FR2105174A1 (enExample) | 1972-04-28 |
| US3730786A (en) | 1973-05-01 |
| FR2105174B1 (enExample) | 1974-04-26 |
| DE2136195A1 (enExample) | 1972-03-09 |