FR2105174A1 - - Google Patents

Info

Publication number
FR2105174A1
FR2105174A1 FR7126002A FR7126002A FR2105174A1 FR 2105174 A1 FR2105174 A1 FR 2105174A1 FR 7126002 A FR7126002 A FR 7126002A FR 7126002 A FR7126002 A FR 7126002A FR 2105174 A1 FR2105174 A1 FR 2105174A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7126002A
Other languages
French (fr)
Other versions
FR2105174B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2105174A1 publication Critical patent/FR2105174A1/fr
Application granted granted Critical
Publication of FR2105174B1 publication Critical patent/FR2105174B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/67—Complementary BJTs
    • H10D84/673—Vertical complementary BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H10D84/0119—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs
    • H10D84/0121—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs the components including complementary BJTs the complementary BJTs being vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/151—Simultaneous diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/157—Special diffusion and profiles
FR7126002A 1970-09-03 1971-07-06 Expired FR2105174B1 (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US6920570A 1970-09-03 1970-09-03

Publications (2)

Publication Number Publication Date
FR2105174A1 true FR2105174A1 (enExample) 1972-04-28
FR2105174B1 FR2105174B1 (enExample) 1974-04-26

Family

ID=22087408

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7126002A Expired FR2105174B1 (enExample) 1970-09-03 1971-07-06

Country Status (5)

Country Link
US (1) US3730786A (enExample)
JP (1) JPS5217719B1 (enExample)
DE (1) DE2136195A1 (enExample)
FR (1) FR2105174B1 (enExample)
GB (1) GB1303236A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5392392U (enExample) * 1977-12-22 1978-07-28
US4485552A (en) * 1980-01-18 1984-12-04 International Business Machines Corporation Complementary transistor structure and method for manufacture
US4357622A (en) * 1980-01-18 1982-11-02 International Business Machines Corporation Complementary transistor structure
US4339767A (en) * 1980-05-05 1982-07-13 International Business Machines Corporation High performance PNP and NPN transistor structure
DE3361832D1 (en) * 1982-04-19 1986-02-27 Matsushita Electric Industrial Co Ltd Semiconductor ic and method of making the same
US4719185A (en) * 1986-04-28 1988-01-12 International Business Machines Corporation Method of making shallow junction complementary vertical bipolar transistor pair
US4951115A (en) * 1989-03-06 1990-08-21 International Business Machines Corp. Complementary transistor structure and method for manufacture
US5141881A (en) * 1989-04-20 1992-08-25 Sanyo Electric Co., Ltd. Method for manufacturing a semiconductor integrated circuit
US4997775A (en) * 1990-02-26 1991-03-05 Cook Robert K Method for forming a complementary bipolar transistor structure including a self-aligned vertical PNP transistor
KR100331296B1 (ko) * 1995-12-20 2002-06-20 클라크 3세 존 엠. 에피택셜 핀치 저항기 및 그 형성 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1529175A (fr) * 1966-06-24 1968-06-14 Philips Nv Procédé pour introduire par diffusion de l'arsenic dans des corps de silicium
FR1583864A (enExample) * 1968-05-14 1969-12-05
US3502951A (en) * 1968-01-02 1970-03-24 Singer Co Monolithic complementary semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1529175A (fr) * 1966-06-24 1968-06-14 Philips Nv Procédé pour introduire par diffusion de l'arsenic dans des corps de silicium
US3502951A (en) * 1968-01-02 1970-03-24 Singer Co Monolithic complementary semiconductor device
FR1583864A (enExample) * 1968-05-14 1969-12-05

Also Published As

Publication number Publication date
GB1303236A (enExample) 1973-01-17
JPS5217719B1 (enExample) 1977-05-17
US3730786A (en) 1973-05-01
FR2105174B1 (enExample) 1974-04-26
DE2136195A1 (enExample) 1972-03-09

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Legal Events

Date Code Title Description
ST Notification of lapse