JPS52146172A - Method of measuring dopant effective content of hydrogen for making semiconductors - Google Patents

Method of measuring dopant effective content of hydrogen for making semiconductors

Info

Publication number
JPS52146172A
JPS52146172A JP6093477A JP6093477A JPS52146172A JP S52146172 A JPS52146172 A JP S52146172A JP 6093477 A JP6093477 A JP 6093477A JP 6093477 A JP6093477 A JP 6093477A JP S52146172 A JPS52146172 A JP S52146172A
Authority
JP
Japan
Prior art keywords
hydrogen
effective content
making semiconductors
dopant effective
measuring dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6093477A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5437471B2 (US20020095090A1-20020718-M00002.png
Inventor
Shiyumitsuto Deiitoritsuhi
Hoofuaa Yohan
Herutsuaa Haintsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siltronic AG
Original Assignee
Wacker Siltronic AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wacker Siltronic AG filed Critical Wacker Siltronic AG
Publication of JPS52146172A publication Critical patent/JPS52146172A/ja
Publication of JPS5437471B2 publication Critical patent/JPS5437471B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C30B13/12—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials in the gaseous or vapour state
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906—Special atmosphere other than vacuum or inert

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP6093477A 1976-05-25 1977-05-25 Method of measuring dopant effective content of hydrogen for making semiconductors Granted JPS52146172A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762623350 DE2623350A1 (de) 1976-05-25 1976-05-25 Verfahren zur bestimmung des wirksamen dotierstoffgehaltes von wasserstoff fuer die halbleiterherstellung

Publications (2)

Publication Number Publication Date
JPS52146172A true JPS52146172A (en) 1977-12-05
JPS5437471B2 JPS5437471B2 (US20020095090A1-20020718-M00002.png) 1979-11-15

Family

ID=5978930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6093477A Granted JPS52146172A (en) 1976-05-25 1977-05-25 Method of measuring dopant effective content of hydrogen for making semiconductors

Country Status (3)

Country Link
US (1) US4210486A (US20020095090A1-20020718-M00002.png)
JP (1) JPS52146172A (US20020095090A1-20020718-M00002.png)
DE (1) DE2623350A1 (US20020095090A1-20020718-M00002.png)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10014650A1 (de) * 2000-03-24 2001-10-04 Wacker Siltronic Halbleitermat Halbleiterscheibe aus Silicium und Verfahren zur Herstellung der Halbleiterscheibe
RU2531081C1 (ru) * 2013-07-18 2014-10-20 Федеральное государственное бюджетное учреждение науки Институт физики полупроводников им. А.В. Ржанова Сибирского отделения Российской академии наук (ИФП СО РАН) Способ измерения для контроля водорода в твердотельном материале

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1523001A1 (de) * 1964-01-29 1969-04-03 Siemens Ag Verfahren zur Bestimmung des Donatorgehalts von hochreinen Halogensilanen,insbesondere von Siliciumtetrachlorid oder Silicochloroform

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1155098B (de) * 1960-06-10 1963-10-03 Siemens Ag Verfahren zur Gewinnung von reinstem Silicium
NL266156A (US20020095090A1-20020718-M00002.png) * 1960-06-24
DE1156384B (de) * 1960-12-23 1963-10-31 Wacker Chemie Gmbh Verfahren zum Dotieren von hochreinen Stoffen
NL276635A (US20020095090A1-20020718-M00002.png) * 1961-03-31
US3108073A (en) * 1961-10-26 1963-10-22 Grace W R & Co Process for doping semiconductive bodies
US3162526A (en) * 1961-10-26 1964-12-22 Grace W R & Co Method of doping semiconductor materials
US3607109A (en) * 1968-01-09 1971-09-21 Emil R Capita Method and means of producing a large diameter single-crystal rod from a polycrystal bar
DE2415717A1 (de) * 1974-04-01 1975-10-16 Siemens Ag Verfahren zum gezielten einbringen von dotierungsmaterial in einen halbleiterkristallstab

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1523001A1 (de) * 1964-01-29 1969-04-03 Siemens Ag Verfahren zur Bestimmung des Donatorgehalts von hochreinen Halogensilanen,insbesondere von Siliciumtetrachlorid oder Silicochloroform

Also Published As

Publication number Publication date
US4210486A (en) 1980-07-01
JPS5437471B2 (US20020095090A1-20020718-M00002.png) 1979-11-15
DE2623350A1 (de) 1977-12-08

Similar Documents

Publication Publication Date Title
JPS5331961A (en) Method of making semiconductor
JPS5299686A (en) Method of measuring erythrosedimentation
JPS5312904A (en) Method of treating theremal craking gasoline by hydrogen
JPS52120687A (en) Method of measuring conductive piece
JPS5329666A (en) Method of making semiconductor device
JPS52150787A (en) Method of continuously moving hydrogen
JPS53972A (en) Method and apparatus for making chemical compound semiconductor
JPS52146172A (en) Method of measuring dopant effective content of hydrogen for making semiconductors
YU238277A (en) Method of obtaining zn-bacitracin compositions
JPS52122469A (en) Improved method of making semiconductor device
JPS5311572A (en) Method of making semiconductor device
JPS5299767A (en) Method of making semiconductor device
JPS52102135A (en) Freshness keeping method of cucumber
JPS52106670A (en) Method of measuring doner content of highhpurity polycrystal silicon for semiconductor
JPS531595A (en) Analysing method of hydrogen gas
JPS533872A (en) Method of measuring conductivity of solution
JPS5361374A (en) Method of measuring electrical analog quantity
JPS5491049A (en) Method of nonndestructively measuring immersion oxygen content into silicon wafer having no junction
JPS5294195A (en) Electrode ppeparation method for oxygen measuring device
JPS5287666A (en) Method of testing breaker
JPS539137A (en) Method of stabilizing measured values
JPS537259A (en) Method of automatically measuring length
JPS5359590A (en) Method of wrapping by thermal shrinkage
JPS5355098A (en) Method of measuring content of component
JPS52142479A (en) Method of making semiconductor