JPS52133884A - Gas phase chemical reactor - Google Patents
Gas phase chemical reactorInfo
- Publication number
- JPS52133884A JPS52133884A JP5080876A JP5080876A JPS52133884A JP S52133884 A JPS52133884 A JP S52133884A JP 5080876 A JP5080876 A JP 5080876A JP 5080876 A JP5080876 A JP 5080876A JP S52133884 A JPS52133884 A JP S52133884A
- Authority
- JP
- Japan
- Prior art keywords
- gas phase
- chemical reactor
- phase chemical
- base material
- unloaded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5080876A JPS52133884A (en) | 1976-05-06 | 1976-05-06 | Gas phase chemical reactor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5080876A JPS52133884A (en) | 1976-05-06 | 1976-05-06 | Gas phase chemical reactor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS52133884A true JPS52133884A (en) | 1977-11-09 |
Family
ID=12869059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5080876A Pending JPS52133884A (en) | 1976-05-06 | 1976-05-06 | Gas phase chemical reactor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52133884A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5890725A (ja) * | 1981-11-26 | 1983-05-30 | Fujitsu Ltd | 気相成長装置用基板ホルダ− |
JPS58115819A (ja) * | 1981-12-28 | 1983-07-09 | Kokusai Electric Co Ltd | プラズマ気相成長用半導体基板保持治具 |
JPS59169999A (ja) * | 1983-03-17 | 1984-09-26 | Matsushita Electric Ind Co Ltd | エピタキシヤル層の気相成長方法 |
JPS60146337U (ja) * | 1984-03-09 | 1985-09-28 | 関西日本電気株式会社 | 半導体装置の製造装置 |
JP2006186224A (ja) * | 2004-12-28 | 2006-07-13 | Jsr Corp | 基板の支持方法および該方法に用いられる支持体 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4831380A (ja) * | 1971-08-30 | 1973-04-24 | ||
JPS4915238U (ja) * | 1972-05-09 | 1974-02-08 |
-
1976
- 1976-05-06 JP JP5080876A patent/JPS52133884A/ja active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4831380A (ja) * | 1971-08-30 | 1973-04-24 | ||
JPS4915238U (ja) * | 1972-05-09 | 1974-02-08 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5890725A (ja) * | 1981-11-26 | 1983-05-30 | Fujitsu Ltd | 気相成長装置用基板ホルダ− |
JPS58115819A (ja) * | 1981-12-28 | 1983-07-09 | Kokusai Electric Co Ltd | プラズマ気相成長用半導体基板保持治具 |
JPS59169999A (ja) * | 1983-03-17 | 1984-09-26 | Matsushita Electric Ind Co Ltd | エピタキシヤル層の気相成長方法 |
JPS60146337U (ja) * | 1984-03-09 | 1985-09-28 | 関西日本電気株式会社 | 半導体装置の製造装置 |
JP2006186224A (ja) * | 2004-12-28 | 2006-07-13 | Jsr Corp | 基板の支持方法および該方法に用いられる支持体 |
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