JPS52132678A - High-sensitive positive type electron beam formation - Google Patents

High-sensitive positive type electron beam formation

Info

Publication number
JPS52132678A
JPS52132678A JP4919376A JP4919376A JPS52132678A JP S52132678 A JPS52132678 A JP S52132678A JP 4919376 A JP4919376 A JP 4919376A JP 4919376 A JP4919376 A JP 4919376A JP S52132678 A JPS52132678 A JP S52132678A
Authority
JP
Japan
Prior art keywords
type electron
electron beam
positive type
beam formation
sensitive positive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4919376A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5521332B2 (enrdf_load_stackoverflow
Inventor
Kenichi Kawashima
Junji Sato
Konoe Miura
Chihiro Eguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Mitsubishi Chemical Corp
Original Assignee
Fujitsu Ltd
Mitsubishi Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd, Mitsubishi Chemical Industries Ltd filed Critical Fujitsu Ltd
Priority to JP4919376A priority Critical patent/JPS52132678A/ja
Publication of JPS52132678A publication Critical patent/JPS52132678A/ja
Publication of JPS5521332B2 publication Critical patent/JPS5521332B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
JP4919376A 1976-04-28 1976-04-28 High-sensitive positive type electron beam formation Granted JPS52132678A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4919376A JPS52132678A (en) 1976-04-28 1976-04-28 High-sensitive positive type electron beam formation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4919376A JPS52132678A (en) 1976-04-28 1976-04-28 High-sensitive positive type electron beam formation

Publications (2)

Publication Number Publication Date
JPS52132678A true JPS52132678A (en) 1977-11-07
JPS5521332B2 JPS5521332B2 (enrdf_load_stackoverflow) 1980-06-09

Family

ID=12824168

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4919376A Granted JPS52132678A (en) 1976-04-28 1976-04-28 High-sensitive positive type electron beam formation

Country Status (1)

Country Link
JP (1) JPS52132678A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105244A (en) * 1979-02-06 1980-08-12 Victor Co Of Japan Ltd Electron beam resist
JPS58113933A (ja) * 1981-12-26 1983-07-07 Daikin Ind Ltd レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法
JPS63271253A (ja) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd 高解像度ポジ型放射線感応性レジスト
JPS63271250A (ja) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd 耐ドライエッチング性ポジ型レジスト材料

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISC1OSURE BULLETIN#V16#N11=1974 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55105244A (en) * 1979-02-06 1980-08-12 Victor Co Of Japan Ltd Electron beam resist
JPS58113933A (ja) * 1981-12-26 1983-07-07 Daikin Ind Ltd レジスト材料およびそれを用いる微細レジストパタ−ンの形成方法
JPS63271253A (ja) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd 高解像度ポジ型放射線感応性レジスト
JPS63271250A (ja) * 1986-12-29 1988-11-09 Toppan Printing Co Ltd 耐ドライエッチング性ポジ型レジスト材料

Also Published As

Publication number Publication date
JPS5521332B2 (enrdf_load_stackoverflow) 1980-06-09

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