JPS52128081A - Protection circuit for c-mos ic - Google Patents

Protection circuit for c-mos ic

Info

Publication number
JPS52128081A
JPS52128081A JP4448976A JP4448976A JPS52128081A JP S52128081 A JPS52128081 A JP S52128081A JP 4448976 A JP4448976 A JP 4448976A JP 4448976 A JP4448976 A JP 4448976A JP S52128081 A JPS52128081 A JP S52128081A
Authority
JP
Japan
Prior art keywords
mos
protection circuit
breakdown
drain
input terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4448976A
Other languages
Japanese (ja)
Inventor
Fusao Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4448976A priority Critical patent/JPS52128081A/en
Publication of JPS52128081A publication Critical patent/JPS52128081A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements

Abstract

PURPOSE:To prevent IC breakdown by providing the clamp circuit consisting of PNP transistor and NPN transistor which form the bypass route between the drain and source of the input terminal of C-MOS.IC.
JP4448976A 1976-04-21 1976-04-21 Protection circuit for c-mos ic Pending JPS52128081A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4448976A JPS52128081A (en) 1976-04-21 1976-04-21 Protection circuit for c-mos ic

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4448976A JPS52128081A (en) 1976-04-21 1976-04-21 Protection circuit for c-mos ic

Publications (1)

Publication Number Publication Date
JPS52128081A true JPS52128081A (en) 1977-10-27

Family

ID=12692949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4448976A Pending JPS52128081A (en) 1976-04-21 1976-04-21 Protection circuit for c-mos ic

Country Status (1)

Country Link
JP (1) JPS52128081A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572081A (en) * 1978-11-27 1980-05-30 Fujitsu Ltd Input clamping circuit
JPS63304656A (en) * 1987-05-15 1988-12-12 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド Protective system of complementary metal oxide semiconductor integrated circuit
EP0735640A1 (en) * 1995-03-31 1996-10-02 Kabushiki Kaisha Toshiba Protection circuit for semiconductor devices
EP3193450A3 (en) * 2015-12-24 2017-10-04 Alpine Electronics, Inc. Overvoltage protection device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5572081A (en) * 1978-11-27 1980-05-30 Fujitsu Ltd Input clamping circuit
JPS6146989B2 (en) * 1978-11-27 1986-10-16 Fujitsu Ltd
JPS63304656A (en) * 1987-05-15 1988-12-12 アドバンスト・マイクロ・ディバイシズ・インコーポレーテッド Protective system of complementary metal oxide semiconductor integrated circuit
EP0735640A1 (en) * 1995-03-31 1996-10-02 Kabushiki Kaisha Toshiba Protection circuit for semiconductor devices
EP3193450A3 (en) * 2015-12-24 2017-10-04 Alpine Electronics, Inc. Overvoltage protection device
US10291020B2 (en) 2015-12-24 2019-05-14 Alpine Electronics, Inc. Overvoltage protection device

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