JPS52127064A - Production of semiconductor - Google Patents
Production of semiconductorInfo
- Publication number
- JPS52127064A JPS52127064A JP4384176A JP4384176A JPS52127064A JP S52127064 A JPS52127064 A JP S52127064A JP 4384176 A JP4384176 A JP 4384176A JP 4384176 A JP4384176 A JP 4384176A JP S52127064 A JPS52127064 A JP S52127064A
- Authority
- JP
- Japan
- Prior art keywords
- ions
- semiconductor
- production
- lattices
- empty lattices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
PURPOSE: To improve ion injection efficiency by charging ions after producing empty lattices to lattice locations to be replaced with injected ions and replacing the empty lattices with charged ions by means of heat treatment.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4384176A JPS6057215B2 (en) | 1976-04-16 | 1976-04-16 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4384176A JPS6057215B2 (en) | 1976-04-16 | 1976-04-16 | Manufacturing method of semiconductor device |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57184045A Division JPS58112328A (en) | 1982-10-20 | 1982-10-20 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52127064A true JPS52127064A (en) | 1977-10-25 |
JPS6057215B2 JPS6057215B2 (en) | 1985-12-13 |
Family
ID=12674957
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4384176A Expired JPS6057215B2 (en) | 1976-04-16 | 1976-04-16 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6057215B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5840818A (en) * | 1981-09-03 | 1983-03-09 | Nec Corp | Introduction of impurity |
JPS6211226A (en) * | 1986-07-18 | 1987-01-20 | Sony Corp | Heat treatment method for iii-v compound semiconductor |
JPS6211225A (en) * | 1986-07-18 | 1987-01-20 | Sony Corp | Heat treatment method for iii-v compound semiconductor |
JPS62265717A (en) * | 1986-05-13 | 1987-11-18 | Nippon Telegr & Teleph Corp <Ntt> | Heat treating method for substrate for gallium arsenide integrated circuit |
-
1976
- 1976-04-16 JP JP4384176A patent/JPS6057215B2/en not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5840818A (en) * | 1981-09-03 | 1983-03-09 | Nec Corp | Introduction of impurity |
JPS62265717A (en) * | 1986-05-13 | 1987-11-18 | Nippon Telegr & Teleph Corp <Ntt> | Heat treating method for substrate for gallium arsenide integrated circuit |
JPS6211226A (en) * | 1986-07-18 | 1987-01-20 | Sony Corp | Heat treatment method for iii-v compound semiconductor |
JPS6211225A (en) * | 1986-07-18 | 1987-01-20 | Sony Corp | Heat treatment method for iii-v compound semiconductor |
Also Published As
Publication number | Publication date |
---|---|
JPS6057215B2 (en) | 1985-12-13 |
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