JPS52127064A - Production of semiconductor - Google Patents

Production of semiconductor

Info

Publication number
JPS52127064A
JPS52127064A JP4384176A JP4384176A JPS52127064A JP S52127064 A JPS52127064 A JP S52127064A JP 4384176 A JP4384176 A JP 4384176A JP 4384176 A JP4384176 A JP 4384176A JP S52127064 A JPS52127064 A JP S52127064A
Authority
JP
Japan
Prior art keywords
ions
semiconductor
production
lattices
empty lattices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4384176A
Other languages
Japanese (ja)
Other versions
JPS6057215B2 (en
Inventor
Takeshi Konuma
Toshio Sugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP4384176A priority Critical patent/JPS6057215B2/en
Publication of JPS52127064A publication Critical patent/JPS52127064A/en
Publication of JPS6057215B2 publication Critical patent/JPS6057215B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE: To improve ion injection efficiency by charging ions after producing empty lattices to lattice locations to be replaced with injected ions and replacing the empty lattices with charged ions by means of heat treatment.
COPYRIGHT: (C)1977,JPO&Japio
JP4384176A 1976-04-16 1976-04-16 Manufacturing method of semiconductor device Expired JPS6057215B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4384176A JPS6057215B2 (en) 1976-04-16 1976-04-16 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4384176A JPS6057215B2 (en) 1976-04-16 1976-04-16 Manufacturing method of semiconductor device

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP57184045A Division JPS58112328A (en) 1982-10-20 1982-10-20 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS52127064A true JPS52127064A (en) 1977-10-25
JPS6057215B2 JPS6057215B2 (en) 1985-12-13

Family

ID=12674957

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4384176A Expired JPS6057215B2 (en) 1976-04-16 1976-04-16 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6057215B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840818A (en) * 1981-09-03 1983-03-09 Nec Corp Introduction of impurity
JPS6211226A (en) * 1986-07-18 1987-01-20 Sony Corp Heat treatment method for iii-v compound semiconductor
JPS6211225A (en) * 1986-07-18 1987-01-20 Sony Corp Heat treatment method for iii-v compound semiconductor
JPS62265717A (en) * 1986-05-13 1987-11-18 Nippon Telegr & Teleph Corp <Ntt> Heat treating method for substrate for gallium arsenide integrated circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840818A (en) * 1981-09-03 1983-03-09 Nec Corp Introduction of impurity
JPS62265717A (en) * 1986-05-13 1987-11-18 Nippon Telegr & Teleph Corp <Ntt> Heat treating method for substrate for gallium arsenide integrated circuit
JPS6211226A (en) * 1986-07-18 1987-01-20 Sony Corp Heat treatment method for iii-v compound semiconductor
JPS6211225A (en) * 1986-07-18 1987-01-20 Sony Corp Heat treatment method for iii-v compound semiconductor

Also Published As

Publication number Publication date
JPS6057215B2 (en) 1985-12-13

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