JPS52114250A - Transistor circuit - Google Patents

Transistor circuit

Info

Publication number
JPS52114250A
JPS52114250A JP3102176A JP3102176A JPS52114250A JP S52114250 A JPS52114250 A JP S52114250A JP 3102176 A JP3102176 A JP 3102176A JP 3102176 A JP3102176 A JP 3102176A JP S52114250 A JPS52114250 A JP S52114250A
Authority
JP
Japan
Prior art keywords
transistor circuit
transistor
potentilal
nil
fluctuation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3102176A
Other languages
English (en)
Other versions
JPS5639084B2 (ja
Inventor
Kazuo Tokuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP3102176A priority Critical patent/JPS52114250A/ja
Priority to US05/778,619 priority patent/US4150309A/en
Priority to NLAANVRAGE7703069,A priority patent/NL176325C/xx
Priority to DE2712523A priority patent/DE2712523C2/de
Publication of JPS52114250A publication Critical patent/JPS52114250A/ja
Publication of JPS5639084B2 publication Critical patent/JPS5639084B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/34—DC amplifiers in which all stages are DC-coupled
    • H03F3/343—DC amplifiers in which all stages are DC-coupled with semiconductor devices only
    • H03F3/347—DC amplifiers in which all stages are DC-coupled with semiconductor devices only in integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Amplifiers (AREA)
JP3102176A 1976-03-22 1976-03-22 Transistor circuit Granted JPS52114250A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP3102176A JPS52114250A (en) 1976-03-22 1976-03-22 Transistor circuit
US05/778,619 US4150309A (en) 1976-03-22 1977-03-17 Transistor circuit having a plurality of constant current sources
NLAANVRAGE7703069,A NL176325C (nl) 1976-03-22 1977-03-21 Transistorketen met bronnen van vaste stroomsterkte.
DE2712523A DE2712523C2 (de) 1976-03-22 1977-03-22 Transistorschaltung mit mehreren Konstantstromquellen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3102176A JPS52114250A (en) 1976-03-22 1976-03-22 Transistor circuit

Publications (2)

Publication Number Publication Date
JPS52114250A true JPS52114250A (en) 1977-09-24
JPS5639084B2 JPS5639084B2 (ja) 1981-09-10

Family

ID=12319856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3102176A Granted JPS52114250A (en) 1976-03-22 1976-03-22 Transistor circuit

Country Status (4)

Country Link
US (1) US4150309A (ja)
JP (1) JPS52114250A (ja)
DE (1) DE2712523C2 (ja)
NL (1) NL176325C (ja)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4283673A (en) * 1979-12-19 1981-08-11 Signetics Corporation Means for reducing current-gain modulation due to differences in collector-base voltages on a transistor pair
DE3006598C2 (de) * 1980-02-22 1985-03-28 Robert Bosch Gmbh, 7000 Stuttgart Spannungsquelle
US4413235A (en) * 1981-02-23 1983-11-01 Motorola, Inc. Low temperature coefficient logarithmic electronic gain controlled amplifier
US4414502A (en) * 1981-07-20 1983-11-08 Advanced Micro Devices, Inc. Current source circuit
US4458159A (en) * 1982-06-25 1984-07-03 International Business Machines Corporation Large swing driver/receiver circuit
JPS59105184U (ja) * 1982-12-29 1984-07-14 株式会社スタツフ 乗用玩具
NL8301138A (nl) * 1983-03-31 1984-10-16 Philips Nv Stroombronschakeling.
US4680535A (en) * 1985-10-17 1987-07-14 Harris Corporation Stable current source
US4751404A (en) * 1986-10-31 1988-06-14 Applied Micro Circuits Corporation Multi-level ECL series gating with temperature-stabilized source current
IT1229678B (it) * 1989-04-27 1991-09-06 Sgs Thomson Microelectronics Generatore di corrente variabile indipendente dalla temperatura.
JP2894776B2 (ja) * 1990-03-02 1999-05-24 日本電気株式会社 半導体集積回路
US5291123A (en) * 1992-09-09 1994-03-01 Hewlett-Packard Company Precision reference current generator
JP3255874B2 (ja) * 1997-04-21 2002-02-12 富士通株式会社 定電流回路
ATE421723T1 (de) * 1997-10-15 2009-02-15 Em Microelectronic Marin Sa Verfahren zur herstellung eines sehr genauen stroms
US8074086B1 (en) * 2006-12-11 2011-12-06 Cypress Semiconductor Corporation Circuit and method for dynamic in-rush current control in a power management circuit

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649926A (en) * 1970-01-08 1972-03-14 Texas Instruments Inc Bias circuitry for a differential circuit utilizing complementary transistors
JPS4890446A (ja) * 1972-03-02 1973-11-26
JPS5111554A (ja) * 1974-07-19 1976-01-29 Sony Corp

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3182269A (en) * 1961-02-17 1965-05-04 Honeywell Inc Differential amplifier bias circuit
JPS5612050B2 (ja) * 1974-05-30 1981-03-18
US3940760A (en) * 1975-03-21 1976-02-24 Analog Devices, Inc. Digital-to-analog converter with current source transistors operated accurately at different current densities
US4019071A (en) * 1976-04-12 1977-04-19 Rca Corporation Biasing current attenuator

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3649926A (en) * 1970-01-08 1972-03-14 Texas Instruments Inc Bias circuitry for a differential circuit utilizing complementary transistors
JPS4890446A (ja) * 1972-03-02 1973-11-26
JPS5111554A (ja) * 1974-07-19 1976-01-29 Sony Corp

Also Published As

Publication number Publication date
JPS5639084B2 (ja) 1981-09-10
NL176325B (nl) 1984-10-16
DE2712523C2 (de) 1990-05-31
DE2712523A1 (de) 1977-10-06
NL176325C (nl) 1985-03-18
US4150309A (en) 1979-04-17
NL7703069A (nl) 1977-09-26

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