ATE421723T1 - Verfahren zur herstellung eines sehr genauen stroms - Google Patents

Verfahren zur herstellung eines sehr genauen stroms

Info

Publication number
ATE421723T1
ATE421723T1 AT97117804T AT97117804T ATE421723T1 AT E421723 T1 ATE421723 T1 AT E421723T1 AT 97117804 T AT97117804 T AT 97117804T AT 97117804 T AT97117804 T AT 97117804T AT E421723 T1 ATE421723 T1 AT E421723T1
Authority
AT
Austria
Prior art keywords
current
transistor
producing
precise current
input
Prior art date
Application number
AT97117804T
Other languages
English (en)
Inventor
Tim Bales
Serge Bitz
Original Assignee
Em Microelectronic Marin Sa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Em Microelectronic Marin Sa filed Critical Em Microelectronic Marin Sa
Application granted granted Critical
Publication of ATE421723T1 publication Critical patent/ATE421723T1/de

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT97117804T 1997-10-15 1997-10-15 Verfahren zur herstellung eines sehr genauen stroms ATE421723T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97117804A EP0910002B1 (de) 1997-10-15 1997-10-15 Verfahren zur Herstellung eines sehr genauen Stroms

Publications (1)

Publication Number Publication Date
ATE421723T1 true ATE421723T1 (de) 2009-02-15

Family

ID=8227481

Family Applications (1)

Application Number Title Priority Date Filing Date
AT97117804T ATE421723T1 (de) 1997-10-15 1997-10-15 Verfahren zur herstellung eines sehr genauen stroms

Country Status (6)

Country Link
US (1) US6137273A (de)
EP (1) EP0910002B1 (de)
JP (1) JPH11249751A (de)
AT (1) ATE421723T1 (de)
DE (1) DE69739232D1 (de)
TW (1) TW437137B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6549071B1 (en) * 2000-09-12 2003-04-15 Silicon Laboratories, Inc. Power amplifier circuitry and method using an inductance coupled to power amplifier switching devices
US6392488B1 (en) 2000-09-12 2002-05-21 Silicon Laboratories, Inc. Dual oxide gate device and method for providing the same
US6462620B1 (en) 2000-09-12 2002-10-08 Silicon Laboratories, Inc. RF power amplifier circuitry and method for amplifying signals
US6917245B2 (en) 2000-09-12 2005-07-12 Silicon Laboratories, Inc. Absolute power detector
US6448847B1 (en) 2000-09-12 2002-09-10 Silicon Laboratories, Inc. Apparatus and method for providing differential-to-single ended conversion and impedance transformation
US6362606B1 (en) * 2000-09-12 2002-03-26 Silicon Laboratories, Inc Method and apparatus for regulating a voltage
US6828859B2 (en) * 2001-08-17 2004-12-07 Silicon Laboratories, Inc. Method and apparatus for protecting devices in an RF power amplifier
US6894565B1 (en) 2002-12-03 2005-05-17 Silicon Laboratories, Inc. Fast settling power amplifier regulator
US6897730B2 (en) * 2003-03-04 2005-05-24 Silicon Laboratories Inc. Method and apparatus for controlling the output power of a power amplifier
GB2407721B (en) * 2003-10-28 2008-01-02 Micron Technology Europ Ltd MOS linear region impedance curvature correction.
JP4712398B2 (ja) * 2005-01-17 2011-06-29 ローム株式会社 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7307378A (de) * 1973-05-28 1974-12-02
JPS52114250A (en) * 1976-03-22 1977-09-24 Nec Corp Transistor circuit
JPS55611A (en) * 1978-06-09 1980-01-07 Toshiba Corp Constant current circuit
JPS5672350A (en) * 1979-11-19 1981-06-16 Advantest Corp Variable current source
US4399399A (en) * 1981-12-21 1983-08-16 Motorola, Inc. Precision current source
US4700144A (en) * 1985-10-04 1987-10-13 Gte Communication Systems Corporation Differential amplifier feedback current mirror
US4706013A (en) * 1986-11-20 1987-11-10 Industrial Technology Research Institute Matching current source
US4808907A (en) * 1988-05-17 1989-02-28 Motorola, Inc. Current regulator and method
US5107199A (en) * 1990-12-24 1992-04-21 Xerox Corporation Temperature compensated resistive circuit
US5124632A (en) * 1991-07-01 1992-06-23 Motorola, Inc. Low-voltage precision current generator
US5291123A (en) * 1992-09-09 1994-03-01 Hewlett-Packard Company Precision reference current generator

Also Published As

Publication number Publication date
DE69739232D1 (de) 2009-03-12
TW437137B (en) 2001-05-28
EP0910002A1 (de) 1999-04-21
EP0910002B1 (de) 2009-01-21
US6137273A (en) 2000-10-24
JPH11249751A (ja) 1999-09-17

Similar Documents

Publication Publication Date Title
ATE421723T1 (de) Verfahren zur herstellung eines sehr genauen stroms
WO2009099904A2 (en) System and method of reducing click and pop noise in audio playback devices
KR910017814A (ko) 저전력 소모 전송 입/출력 장치
EP1387486A3 (de) Verstärkerschaltung und mehrstufige Verstärkerschaltung
KR970703555A (ko) 전압 조절기(Voltage regulator)
KR880701041A (ko) 자동조절되는 증폭기의 오프셑 전압을 보상하기 위한 방법 및 그 회로
DE59903041D1 (de) Verstärkerausgangsstufe
KR940003161A (ko) 광대역 증폭기
US4604586A (en) Amplifier with current mirror circuit for controlling amplification temperature dependency
DE3778780D1 (de) Schaltungsanordnung mit einer brueckenendstufe.
EP0343731A3 (de) Strombegrenzungsschaltung mit Einheitsverstärkung
CA2098906A1 (en) A constant current and constant voltage regulating circuit for common-base or common-gate transistor devices
KR970051385A (ko) 플래쉬 메모리셀의 문턱전압 조정회로
KR920015697A (ko) 이득제어장치
KR920022883A (ko) 복수의 시상수 신호 제어 장치
KR920018744A (ko) 신호 레벨 제어 회로
SE9901839D0 (sv) A soft start circuit
KR970031292A (ko) 온도 보상 히스테리시스를 갖는 비교기(a comparator with temperature-compensated hysteresis)
ATE251817T1 (de) Elektronische lautstärkesteuerungsschaltung mit gesteuerter ausgangscharakteristik
JPH0644118Y2 (ja) 発光素子バイアスモニター回路
KR950020008A (ko) 대수증폭기를 이용한 오프셋 전압 조절회로
KR920018544A (ko) 비선형 p 이득을 갖는 디지탈 pid 제어방법
KR910010924A (ko) 출력 레벨 조정회로
KR910018882A (ko) 조광기의 아날로그 입력 보상방식
KR970055373A (ko) 히스테리시스의 크기를 제어할 수 있는 비교기 회로

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties