JPS52104878A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
JPS52104878A
JPS52104878A JP2113876A JP2113876A JPS52104878A JP S52104878 A JPS52104878 A JP S52104878A JP 2113876 A JP2113876 A JP 2113876A JP 2113876 A JP2113876 A JP 2113876A JP S52104878 A JPS52104878 A JP S52104878A
Authority
JP
Japan
Prior art keywords
field effect
effect transistor
regionsarrayed
pinching
plain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2113876A
Other languages
Japanese (ja)
Other versions
JPS6120155B2 (en
Inventor
Takeaki Okabe
Isao Yoshida
Shikayuki Ochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2113876A priority Critical patent/JPS52104878A/en
Publication of JPS52104878A publication Critical patent/JPS52104878A/en
Publication of JPS6120155B2 publication Critical patent/JPS6120155B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make it possible to flow large current without largely changing pinching off properties, by arranging each cross point of gate regionsarrayed in a plain so as to form T-shape.
COPYRIGHT: (C)1977,JPO&Japio
JP2113876A 1976-03-01 1976-03-01 Field effect transistor Granted JPS52104878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2113876A JPS52104878A (en) 1976-03-01 1976-03-01 Field effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2113876A JPS52104878A (en) 1976-03-01 1976-03-01 Field effect transistor

Publications (2)

Publication Number Publication Date
JPS52104878A true JPS52104878A (en) 1977-09-02
JPS6120155B2 JPS6120155B2 (en) 1986-05-21

Family

ID=12046525

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2113876A Granted JPS52104878A (en) 1976-03-01 1976-03-01 Field effect transistor

Country Status (1)

Country Link
JP (1) JPS52104878A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
JPH0370387B2 (en) * 1978-10-13 1991-11-07 Int Rectifier Corp
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage

Also Published As

Publication number Publication date
JPS6120155B2 (en) 1986-05-21

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