JPS52104878A - Field effect transistor - Google Patents
Field effect transistorInfo
- Publication number
- JPS52104878A JPS52104878A JP2113876A JP2113876A JPS52104878A JP S52104878 A JPS52104878 A JP S52104878A JP 2113876 A JP2113876 A JP 2113876A JP 2113876 A JP2113876 A JP 2113876A JP S52104878 A JPS52104878 A JP S52104878A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- regionsarrayed
- pinching
- plain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To make it possible to flow large current without largely changing pinching off properties, by arranging each cross point of gate regionsarrayed in a plain so as to form T-shape.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2113876A JPS52104878A (en) | 1976-03-01 | 1976-03-01 | Field effect transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2113876A JPS52104878A (en) | 1976-03-01 | 1976-03-01 | Field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS52104878A true JPS52104878A (en) | 1977-09-02 |
JPS6120155B2 JPS6120155B2 (en) | 1986-05-21 |
Family
ID=12046525
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2113876A Granted JPS52104878A (en) | 1976-03-01 | 1976-03-01 | Field effect transistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS52104878A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
-
1976
- 1976-03-01 JP JP2113876A patent/JPS52104878A/en active Granted
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5553462A (en) * | 1978-10-13 | 1980-04-18 | Int Rectifier Corp | Mosfet element |
JPH0370387B2 (en) * | 1978-10-13 | 1991-11-07 | Int Rectifier Corp | |
US5598018A (en) * | 1978-10-13 | 1997-01-28 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
US5742087A (en) * | 1978-10-13 | 1998-04-21 | International Rectifier Corporation | High power MOSFET with low on-resistance and high breakdown voltage |
Also Published As
Publication number | Publication date |
---|---|
JPS6120155B2 (en) | 1986-05-21 |
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