JPS519269B2 - - Google Patents

Info

Publication number
JPS519269B2
JPS519269B2 JP47051435A JP5143572A JPS519269B2 JP S519269 B2 JPS519269 B2 JP S519269B2 JP 47051435 A JP47051435 A JP 47051435A JP 5143572 A JP5143572 A JP 5143572A JP S519269 B2 JPS519269 B2 JP S519269B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP47051435A
Other languages
Japanese (ja)
Other versions
JPS499977A (cg-RX-API-DMAC10.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP47051435A priority Critical patent/JPS519269B2/ja
Priority to US360080A priority patent/US3929531A/en
Priority to GB2307873A priority patent/GB1367030A/en
Priority to FR7317900A priority patent/FR2185859B1/fr
Priority to DE2325351A priority patent/DE2325351C3/de
Priority to CA171,820A priority patent/CA980916A/en
Priority to IT50063/73A priority patent/IT985188B/it
Publication of JPS499977A publication Critical patent/JPS499977A/ja
Publication of JPS519269B2 publication Critical patent/JPS519269B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H10W90/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P50/642—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/054—Flat sheets-substrates

Landscapes

  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP47051435A 1972-05-19 1972-05-19 Expired JPS519269B2 (cg-RX-API-DMAC10.html)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP47051435A JPS519269B2 (cg-RX-API-DMAC10.html) 1972-05-19 1972-05-19
US360080A US3929531A (en) 1972-05-19 1973-05-14 Method of manufacturing high breakdown voltage rectifiers
GB2307873A GB1367030A (en) 1972-05-19 1973-05-15 Method of manufacturing high breakdown voltage rectifiers
FR7317900A FR2185859B1 (cg-RX-API-DMAC10.html) 1972-05-19 1973-05-17
DE2325351A DE2325351C3 (de) 1972-05-19 1973-05-18 Verfahren zur Herstellung von Siliziumgleichrichtersäulen mit hoher Durchbruchsspannung
CA171,820A CA980916A (en) 1972-05-19 1973-05-18 Method of manufacturing high breakdown voltage rectifiers
IT50063/73A IT985188B (it) 1972-05-19 1973-05-18 Procedimento per la produzione di raddrizzatori a semicondut tore con elevata tensione di scarica inversa

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47051435A JPS519269B2 (cg-RX-API-DMAC10.html) 1972-05-19 1972-05-19

Publications (2)

Publication Number Publication Date
JPS499977A JPS499977A (cg-RX-API-DMAC10.html) 1974-01-29
JPS519269B2 true JPS519269B2 (cg-RX-API-DMAC10.html) 1976-03-25

Family

ID=12886837

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47051435A Expired JPS519269B2 (cg-RX-API-DMAC10.html) 1972-05-19 1972-05-19

Country Status (7)

Country Link
US (1) US3929531A (cg-RX-API-DMAC10.html)
JP (1) JPS519269B2 (cg-RX-API-DMAC10.html)
CA (1) CA980916A (cg-RX-API-DMAC10.html)
DE (1) DE2325351C3 (cg-RX-API-DMAC10.html)
FR (1) FR2185859B1 (cg-RX-API-DMAC10.html)
GB (1) GB1367030A (cg-RX-API-DMAC10.html)
IT (1) IT985188B (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59146114A (ja) * 1984-02-06 1984-08-21 松下電器産業株式会社 スイツチ
JPS63192632U (cg-RX-API-DMAC10.html) * 1987-05-29 1988-12-12

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2359511C2 (de) * 1973-11-29 1987-03-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum lokalisierten Ätzen von Gräben in Siliciumkristallen
FR2294549A1 (fr) * 1974-12-09 1976-07-09 Radiotechnique Compelec Procede de realisation de dispositifs optoelectroniques
US4319265A (en) * 1979-12-06 1982-03-09 The United States Of America As Represented By The Secretary Of The Army Monolithically interconnected series-parallel avalanche diodes

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1193766B (de) * 1961-01-27 1965-05-26 Siemens Ag Verfahren zur Stabilisierung der durch AEtzen erzielten Sperreigenschaften von Halbleiteranordnungen
DE1287404B (de) * 1961-07-06 1969-01-16 Licentia Gmbh Verfahren zum Vorbereiten von Siliziumkoerpern fuer das Dotieren durch AEtzen
DE1258235B (de) * 1965-01-04 1968-01-04 Licentia Gmbh Verfahren zur Herstellung einer, die Sperrspannungsfestigkeit erhoehenden Randzonenprofilierung von Siliziumscheiben
US3597289A (en) * 1967-01-19 1971-08-03 Licentia Gmbh Method of etching a semiconductor body
GB1139154A (en) * 1967-01-30 1969-01-08 Westinghouse Brake & Signal Semi-conductor devices and the manufacture thereof
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming
US3627598A (en) * 1970-02-05 1971-12-14 Fairchild Camera Instr Co Nitride passivation of mesa transistors by phosphovapox lifting
US3699402A (en) * 1970-07-27 1972-10-17 Gen Electric Hybrid circuit power module
NL167277C (nl) * 1970-08-29 1981-11-16 Philips Nv Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting.
US3689993A (en) * 1971-07-26 1972-09-12 Texas Instruments Inc Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks
US3791948A (en) * 1971-11-01 1974-02-12 Bell Telephone Labor Inc Preferential etching in g a p
US3859127A (en) * 1972-01-24 1975-01-07 Motorola Inc Method and material for passivating the junctions of mesa type semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59146114A (ja) * 1984-02-06 1984-08-21 松下電器産業株式会社 スイツチ
JPS63192632U (cg-RX-API-DMAC10.html) * 1987-05-29 1988-12-12

Also Published As

Publication number Publication date
US3929531A (en) 1975-12-30
FR2185859A1 (cg-RX-API-DMAC10.html) 1974-01-04
DE2325351C3 (de) 1981-01-29
FR2185859B1 (cg-RX-API-DMAC10.html) 1977-11-10
DE2325351A1 (de) 1973-11-29
JPS499977A (cg-RX-API-DMAC10.html) 1974-01-29
DE2325351B2 (de) 1980-05-22
GB1367030A (en) 1974-09-18
CA980916A (en) 1975-12-30
IT985188B (it) 1974-11-30

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