FR2185859A1 - - Google Patents

Info

Publication number
FR2185859A1
FR2185859A1 FR7317900A FR7317900A FR2185859A1 FR 2185859 A1 FR2185859 A1 FR 2185859A1 FR 7317900 A FR7317900 A FR 7317900A FR 7317900 A FR7317900 A FR 7317900A FR 2185859 A1 FR2185859 A1 FR 2185859A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7317900A
Other languages
French (fr)
Other versions
FR2185859B1 (cg-RX-API-DMAC10.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of FR2185859A1 publication Critical patent/FR2185859A1/fr
Application granted granted Critical
Publication of FR2185859B1 publication Critical patent/FR2185859B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H10W90/00—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P50/642—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/054—Flat sheets-substrates
FR7317900A 1972-05-19 1973-05-17 Expired FR2185859B1 (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47051435A JPS519269B2 (cg-RX-API-DMAC10.html) 1972-05-19 1972-05-19

Publications (2)

Publication Number Publication Date
FR2185859A1 true FR2185859A1 (cg-RX-API-DMAC10.html) 1974-01-04
FR2185859B1 FR2185859B1 (cg-RX-API-DMAC10.html) 1977-11-10

Family

ID=12886837

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7317900A Expired FR2185859B1 (cg-RX-API-DMAC10.html) 1972-05-19 1973-05-17

Country Status (7)

Country Link
US (1) US3929531A (cg-RX-API-DMAC10.html)
JP (1) JPS519269B2 (cg-RX-API-DMAC10.html)
CA (1) CA980916A (cg-RX-API-DMAC10.html)
DE (1) DE2325351C3 (cg-RX-API-DMAC10.html)
FR (1) FR2185859B1 (cg-RX-API-DMAC10.html)
GB (1) GB1367030A (cg-RX-API-DMAC10.html)
IT (1) IT985188B (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2359511C2 (de) * 1973-11-29 1987-03-05 Siemens AG, 1000 Berlin und 8000 München Verfahren zum lokalisierten Ätzen von Gräben in Siliciumkristallen
FR2294549A1 (fr) * 1974-12-09 1976-07-09 Radiotechnique Compelec Procede de realisation de dispositifs optoelectroniques
US4319265A (en) * 1979-12-06 1982-03-09 The United States Of America As Represented By The Secretary Of The Army Monolithically interconnected series-parallel avalanche diodes
JPS59146114A (ja) * 1984-02-06 1984-08-21 松下電器産業株式会社 スイツチ
JPS63192632U (cg-RX-API-DMAC10.html) * 1987-05-29 1988-12-12

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1258235B (de) * 1965-01-04 1968-01-04 Licentia Gmbh Verfahren zur Herstellung einer, die Sperrspannungsfestigkeit erhoehenden Randzonenprofilierung von Siliziumscheiben
DE1287404B (de) * 1961-07-06 1969-01-16 Licentia Gmbh Verfahren zum Vorbereiten von Siliziumkoerpern fuer das Dotieren durch AEtzen

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1193766B (de) * 1961-01-27 1965-05-26 Siemens Ag Verfahren zur Stabilisierung der durch AEtzen erzielten Sperreigenschaften von Halbleiteranordnungen
US3597289A (en) * 1967-01-19 1971-08-03 Licentia Gmbh Method of etching a semiconductor body
GB1139154A (en) * 1967-01-30 1969-01-08 Westinghouse Brake & Signal Semi-conductor devices and the manufacture thereof
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming
US3627598A (en) * 1970-02-05 1971-12-14 Fairchild Camera Instr Co Nitride passivation of mesa transistors by phosphovapox lifting
US3699402A (en) * 1970-07-27 1972-10-17 Gen Electric Hybrid circuit power module
NL167277C (nl) * 1970-08-29 1981-11-16 Philips Nv Halfgeleiderinrichting met een plaatvorming half- geleiderlichaam met over althans een deel van de dikte van het halfgeleiderlichaam afgeschuinde randen, dat is voorzien van een metalen elektrode die een gelijkrichtende overgang vormt met het halfgeleider- lichaam en werkwijze ter vervaardiging van de halfgeleiderinrichting.
US3689993A (en) * 1971-07-26 1972-09-12 Texas Instruments Inc Fabrication of semiconductor devices having low thermal inpedance bonds to heat sinks
US3791948A (en) * 1971-11-01 1974-02-12 Bell Telephone Labor Inc Preferential etching in g a p
US3859127A (en) * 1972-01-24 1975-01-07 Motorola Inc Method and material for passivating the junctions of mesa type semiconductor devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1287404B (de) * 1961-07-06 1969-01-16 Licentia Gmbh Verfahren zum Vorbereiten von Siliziumkoerpern fuer das Dotieren durch AEtzen
DE1258235B (de) * 1965-01-04 1968-01-04 Licentia Gmbh Verfahren zur Herstellung einer, die Sperrspannungsfestigkeit erhoehenden Randzonenprofilierung von Siliziumscheiben

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE US JOURNAL OF THE ELECTROCHEMICAL SOCIETY, VOL. 119, MARS 1972, "APPLICATION OF SELECTIVE EPITAXY AND PREFERENTIAL ETCHING OF SILICON TO SEMICONDUCTOR DEVICES" YASUSUKE SUMITOMO ET AL : PAGE 93C, ABSTRACT 25 *

Also Published As

Publication number Publication date
US3929531A (en) 1975-12-30
DE2325351C3 (de) 1981-01-29
FR2185859B1 (cg-RX-API-DMAC10.html) 1977-11-10
DE2325351A1 (de) 1973-11-29
JPS499977A (cg-RX-API-DMAC10.html) 1974-01-29
DE2325351B2 (de) 1980-05-22
JPS519269B2 (cg-RX-API-DMAC10.html) 1976-03-25
GB1367030A (en) 1974-09-18
CA980916A (en) 1975-12-30
IT985188B (it) 1974-11-30

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