JPS5185381A - - Google Patents

Info

Publication number
JPS5185381A
JPS5185381A JP50009713A JP971375A JPS5185381A JP S5185381 A JPS5185381 A JP S5185381A JP 50009713 A JP50009713 A JP 50009713A JP 971375 A JP971375 A JP 971375A JP S5185381 A JPS5185381 A JP S5185381A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50009713A
Other languages
Japanese (ja)
Inventor
Isao Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50009713A priority Critical patent/JPS5185381A/ja
Publication of JPS5185381A publication Critical patent/JPS5185381A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/662—Vertical DMOS [VDMOS] FETs having a drift region having a doping concentration that is higher between adjacent body regions relative to other parts of the drift region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
JP50009713A 1975-01-24 1975-01-24 Pending JPS5185381A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50009713A JPS5185381A (en) 1975-01-24 1975-01-24

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50009713A JPS5185381A (en) 1975-01-24 1975-01-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP54162677A Division JPS6041876B2 (en) 1979-12-17 1979-12-17 Manufacturing method of insulated gate field effect transistor

Publications (1)

Publication Number Publication Date
JPS5185381A true JPS5185381A (en) 1976-07-26

Family

ID=11727885

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50009713A Pending JPS5185381A (en) 1975-01-24 1975-01-24

Country Status (1)

Country Link
JP (1) JPS5185381A (en)

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
JPS57141964A (en) * 1981-02-26 1982-09-02 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
JPS5914676A (en) * 1982-07-16 1984-01-25 Nec Corp Manufacture of vertical type field effect transistor
JPS62122175A (en) * 1986-08-22 1987-06-03 Nec Corp semiconductor equipment
US4686551A (en) * 1982-11-27 1987-08-11 Nissan Motor Co., Ltd. MOS transistor
US4705759A (en) * 1978-10-13 1987-11-10 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
JPS6387771A (en) * 1987-07-17 1988-04-19 Nec Corp Field effect transistor
JPS6387769A (en) * 1987-07-17 1988-04-19 Nec Corp Field effect transistor
US4803532A (en) * 1982-11-27 1989-02-07 Nissan Motor Co., Ltd. Vertical MOSFET having a proof structure against puncture due to breakdown
US4942444A (en) * 1978-08-10 1990-07-17 Siemens Aktiengesellschaft Thyristor
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
US5008725A (en) * 1979-05-14 1991-04-16 International Rectifier Corporation Plural polygon source pattern for MOSFET
US5130767A (en) * 1979-05-14 1992-07-14 International Rectifier Corporation Plural polygon source pattern for mosfet
US5243211A (en) * 1991-11-25 1993-09-07 Harris Corporation Power fet with shielded channels
US5323036A (en) * 1992-01-21 1994-06-21 Harris Corporation Power FET with gate segments covering drain regions disposed in a hexagonal pattern
US5663080A (en) * 1991-11-29 1997-09-02 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing MOS-type integrated circuits
US5670392A (en) * 1994-07-04 1997-09-23 Sgs-Thomson Microelectronics S.R.L. Process for manufacturing high-density MOS-technology power devices
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5841167A (en) * 1995-12-28 1998-11-24 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US5933733A (en) * 1994-06-23 1999-08-03 Sgs-Thomson Microelectronics, S.R.L. Zero thermal budget manufacturing process for MOS-technology power devices
US5981998A (en) * 1995-10-30 1999-11-09 Sgs-Thomson Microelectronics S.R.L. Single feature size MOS technology power device
US6030870A (en) * 1995-10-30 2000-02-29 Sgs-Thomson Microelectronics, S.R.L. High density MOS technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US6492691B2 (en) 1998-05-26 2002-12-10 Stmicroelectronics S.R.L. High integration density MOS technology power device structure
US6507070B1 (en) * 1996-11-25 2003-01-14 Semiconductor Components Industries Llc Semiconductor device and method of making
JP2003046082A (en) * 2001-05-25 2003-02-14 Toshiba Corp Semiconductor device and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831514A (en) * 1971-08-26 1973-04-25
JPS4840814A (en) * 1971-09-25 1973-06-15

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4831514A (en) * 1971-08-26 1973-04-25
JPS4840814A (en) * 1971-09-25 1973-06-15

Cited By (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4942444A (en) * 1978-08-10 1990-07-17 Siemens Aktiengesellschaft Thyristor
US5742087A (en) * 1978-10-13 1998-04-21 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
JPS5553462A (en) * 1978-10-13 1980-04-18 Int Rectifier Corp Mosfet element
US5598018A (en) * 1978-10-13 1997-01-28 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5338961A (en) * 1978-10-13 1994-08-16 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US4705759A (en) * 1978-10-13 1987-11-10 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5191396A (en) * 1978-10-13 1993-03-02 International Rectifier Corp. High power mosfet with low on-resistance and high breakdown voltage
US4959699A (en) * 1978-10-13 1990-09-25 International Rectifier Corporation High power MOSFET with low on-resistance and high breakdown voltage
US5008725A (en) * 1979-05-14 1991-04-16 International Rectifier Corporation Plural polygon source pattern for MOSFET
US5130767A (en) * 1979-05-14 1992-07-14 International Rectifier Corporation Plural polygon source pattern for mosfet
JPS57141964A (en) * 1981-02-26 1982-09-02 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type field effect transistor
JPS5914676A (en) * 1982-07-16 1984-01-25 Nec Corp Manufacture of vertical type field effect transistor
US4803532A (en) * 1982-11-27 1989-02-07 Nissan Motor Co., Ltd. Vertical MOSFET having a proof structure against puncture due to breakdown
US4686551A (en) * 1982-11-27 1987-08-11 Nissan Motor Co., Ltd. MOS transistor
US4974059A (en) * 1982-12-21 1990-11-27 International Rectifier Corporation Semiconductor high-power mosfet device
JPS62122175A (en) * 1986-08-22 1987-06-03 Nec Corp semiconductor equipment
JPS6387769A (en) * 1987-07-17 1988-04-19 Nec Corp Field effect transistor
JPS6387771A (en) * 1987-07-17 1988-04-19 Nec Corp Field effect transistor
US5243211A (en) * 1991-11-25 1993-09-07 Harris Corporation Power fet with shielded channels
US5663080A (en) * 1991-11-29 1997-09-02 Sgs-Thomson Microelectronics, S.R.L. Process for manufacturing MOS-type integrated circuits
US5696399A (en) * 1991-11-29 1997-12-09 Sgs-Thomson Microelectronics S.R.L. Process for manufacturing MOS-type integrated circuits
US5323036A (en) * 1992-01-21 1994-06-21 Harris Corporation Power FET with gate segments covering drain regions disposed in a hexagonal pattern
US6140679A (en) * 1994-06-23 2000-10-31 Sgs-Thomson Microelectronics S.R.L. Zero thermal budget manufacturing process for MOS-technology power devices
US5933733A (en) * 1994-06-23 1999-08-03 Sgs-Thomson Microelectronics, S.R.L. Zero thermal budget manufacturing process for MOS-technology power devices
US5670392A (en) * 1994-07-04 1997-09-23 Sgs-Thomson Microelectronics S.R.L. Process for manufacturing high-density MOS-technology power devices
US6369425B1 (en) 1994-07-04 2002-04-09 Sgs-Thomson Microelecttronica S.R.L. High-density power device
US5701023A (en) * 1994-08-03 1997-12-23 National Semiconductor Corporation Insulated gate semiconductor device typically having subsurface-peaked portion of body region for improved ruggedness
US5897355A (en) * 1994-08-03 1999-04-27 National Semiconductor Corporation Method of manufacturing insulated gate semiconductor device to improve ruggedness
US5798554A (en) * 1995-02-24 1998-08-25 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US6111297A (en) * 1995-02-24 2000-08-29 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno MOS-technology power device integrated structure and manufacturing process thereof
US5869371A (en) * 1995-06-07 1999-02-09 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of mos-gated power devices
US6046473A (en) * 1995-06-07 2000-04-04 Stmicroelectronics, Inc. Structure and process for reducing the on-resistance of MOS-gated power devices
US5981998A (en) * 1995-10-30 1999-11-09 Sgs-Thomson Microelectronics S.R.L. Single feature size MOS technology power device
US5985721A (en) * 1995-10-30 1999-11-16 Sgs-Thomson Microelectronics, S.R.L. Single feature size MOS technology power device
US6030870A (en) * 1995-10-30 2000-02-29 Sgs-Thomson Microelectronics, S.R.L. High density MOS technology power device
US6054737A (en) * 1995-10-30 2000-04-25 Sgs-Thomson Microelectronics S.R.L. High density MOS technology power device
US6228719B1 (en) 1995-11-06 2001-05-08 Stmicroelectronics S.R.L. MOS technology power device with low output resistance and low capacitance, and related manufacturing process
US5841167A (en) * 1995-12-28 1998-11-24 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US6051862A (en) * 1995-12-28 2000-04-18 Sgs-Thomson Microelectronics S.R.L. MOS-technology power device integrated structure
US6507070B1 (en) * 1996-11-25 2003-01-14 Semiconductor Components Industries Llc Semiconductor device and method of making
US6492691B2 (en) 1998-05-26 2002-12-10 Stmicroelectronics S.R.L. High integration density MOS technology power device structure
JP2003046082A (en) * 2001-05-25 2003-02-14 Toshiba Corp Semiconductor device and manufacturing method thereof

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