JPS5183742A - Randamu akusesu memori - Google Patents

Randamu akusesu memori

Info

Publication number
JPS5183742A
JPS5183742A JP50147944A JP14794475A JPS5183742A JP S5183742 A JPS5183742 A JP S5183742A JP 50147944 A JP50147944 A JP 50147944A JP 14794475 A JP14794475 A JP 14794475A JP S5183742 A JPS5183742 A JP S5183742A
Authority
JP
Japan
Prior art keywords
randamu
akusesu
memori
randamu akusesu
akusesu memori
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50147944A
Other languages
Japanese (ja)
Inventor
Rintoshuteeto Gyuntaa
Horutsuman Deiitaa
Murinetsuku Danieru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of JPS5183742A publication Critical patent/JPS5183742A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
JP50147944A 1974-12-13 1975-12-13 Randamu akusesu memori Pending JPS5183742A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19742459023 DE2459023C3 (en) 1974-12-13 1974-12-13 Static read / write memory cell that can be integrated, made up of insulating-layer field effect transistors of the same type of conduction and control

Publications (1)

Publication Number Publication Date
JPS5183742A true JPS5183742A (en) 1976-07-22

Family

ID=5933342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50147944A Pending JPS5183742A (en) 1974-12-13 1975-12-13 Randamu akusesu memori

Country Status (5)

Country Link
JP (1) JPS5183742A (en)
DE (1) DE2459023C3 (en)
FR (1) FR2294514A1 (en)
GB (1) GB1483868A (en)
IT (1) IT1050037B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2663147A1 (en) * 1990-06-12 1991-12-13 Sgs Thomson Microelectronics Floating-gate dual-transistor programmable memory
FR2703502B1 (en) * 1993-04-02 1995-06-16 Matra Mhs STATIC MOS MEMORY CELL.

Also Published As

Publication number Publication date
IT1050037B (en) 1981-03-10
GB1483868A (en) 1977-08-24
DE2459023B2 (en) 1979-01-18
DE2459023C3 (en) 1979-09-13
FR2294514A1 (en) 1976-07-09
DE2459023A1 (en) 1976-06-16

Similar Documents

Publication Publication Date Title
JPS5165841A (en) Handotairandamu akusesu memori
JPS51102636A (en) Karaashashingazo no keiseihoho
JPS5178643A (en) Sabuchaneru memori akusesuseigyohoshiki
JPS5191660A (en) Terebijonjuzokan no panerunochigawaoaruminaizusuruhoho
JPS5119744A (en) Koseibutsushitsu xkk6222 no shinkyudotainoseiho
JPS511668A (en) Komekojojinzomai no seizoho
JPS511666A (en) Kakokokuruifunmatsu no seizoho
JPS5128663A (en) Denshikairoyokizai no seizohoho
JPS5123619A (en) Kogatatoransu no seizohoho
JPS5165857A (en) Kondensa memori
JPS5183742A (en) Randamu akusesu memori
JPS511554A (en) Senjohoriesuteru no seizoho
JPS5125070A (en) Ryukakadomiumumaku no seizohoho
JPS5126624A (en) Haisanoryoshita igatahaisa no chuwahoho
JPS5123463A (en) Fuintsukichuubu no fuinhenkeiyokogu
JPS51102976A (en) Biniiruhausu no kankisochi
JPS5118187A (en) Kenzobutsuyori no hinansochi
JPS511664A (en) Patsukuiryudemen no seizoho
JPS5120271A (en) Taidenboshipaipu no seikeihoho
JPS5125317A (en) Umetatechito no torafuikabiriteikairyokoho
JPS5165856A (en) Kondensa memori
JPS516434A (en) Riido onrii memori
JPS5165839A (en) Kondensa memori
JPS5126249A (en) Gyonikuneriseihin no shohenjokakoho
JPS5125073A (en) Handotaisochi no kakusanryoikikozo