FR2703502B1 - STATIC MOS MEMORY CELL. - Google Patents

STATIC MOS MEMORY CELL.

Info

Publication number
FR2703502B1
FR2703502B1 FR9303911A FR9303911A FR2703502B1 FR 2703502 B1 FR2703502 B1 FR 2703502B1 FR 9303911 A FR9303911 A FR 9303911A FR 9303911 A FR9303911 A FR 9303911A FR 2703502 B1 FR2703502 B1 FR 2703502B1
Authority
FR
France
Prior art keywords
memory cell
mos memory
static mos
static
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9303911A
Other languages
French (fr)
Other versions
FR2703502A1 (en
Inventor
Rodde Klaus
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Matra MHS SA
Original Assignee
Matra MHS SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matra MHS SA filed Critical Matra MHS SA
Priority to FR9303911A priority Critical patent/FR2703502B1/en
Publication of FR2703502A1 publication Critical patent/FR2703502A1/en
Application granted granted Critical
Publication of FR2703502B1 publication Critical patent/FR2703502B1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/005—Circuit means for protection against loss of information of semiconductor storage devices
FR9303911A 1993-04-02 1993-04-02 STATIC MOS MEMORY CELL. Expired - Fee Related FR2703502B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR9303911A FR2703502B1 (en) 1993-04-02 1993-04-02 STATIC MOS MEMORY CELL.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9303911A FR2703502B1 (en) 1993-04-02 1993-04-02 STATIC MOS MEMORY CELL.

Publications (2)

Publication Number Publication Date
FR2703502A1 FR2703502A1 (en) 1994-10-07
FR2703502B1 true FR2703502B1 (en) 1995-06-16

Family

ID=9445693

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9303911A Expired - Fee Related FR2703502B1 (en) 1993-04-02 1993-04-02 STATIC MOS MEMORY CELL.

Country Status (1)

Country Link
FR (1) FR2703502B1 (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2459023C3 (en) * 1974-12-13 1979-09-13 Deutsche Itt Industries Gmbh, 7800 Freiburg Static read / write memory cell that can be integrated, made up of insulating-layer field effect transistors of the same type of conduction and control
US4725981A (en) * 1986-02-03 1988-02-16 Motorola, Inc. Random access memory cell resistant to inadvertant change of state due to charged particles

Also Published As

Publication number Publication date
FR2703502A1 (en) 1994-10-07

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20101230