JPS5164878A - - Google Patents

Info

Publication number
JPS5164878A
JPS5164878A JP50123325A JP12332575A JPS5164878A JP S5164878 A JPS5164878 A JP S5164878A JP 50123325 A JP50123325 A JP 50123325A JP 12332575 A JP12332575 A JP 12332575A JP S5164878 A JPS5164878 A JP S5164878A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP50123325A
Other versions
JPS5944788B2 (ja
Inventor
Yuugen Hyuusuton Dagurasu
Kurishuna Surindaa
Jeianto Bariga Bantobaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS5164878A publication Critical patent/JPS5164878A/ja
Publication of JPS5944788B2 publication Critical patent/JPS5944788B2/ja
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/7313—Avalanche transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
JP50123325A 1974-10-16 1975-10-15 ゲ−ト変調形バイポ−ラ・トランジスタ Expired JPS5944788B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US515164 1974-10-16
US05/515,164 US3979769A (en) 1974-10-16 1974-10-16 Gate modulated bipolar transistor

Publications (2)

Publication Number Publication Date
JPS5164878A true JPS5164878A (ja) 1976-06-04
JPS5944788B2 JPS5944788B2 (ja) 1984-11-01

Family

ID=24050215

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50123325A Expired JPS5944788B2 (ja) 1974-10-16 1975-10-15 ゲ−ト変調形バイポ−ラ・トランジスタ

Country Status (6)

Country Link
US (1) US3979769A (ja)
JP (1) JPS5944788B2 (ja)
DE (1) DE2545908C2 (ja)
FR (1) FR2331154A1 (ja)
GB (1) GB1525469A (ja)
SE (1) SE412145B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244758A (ja) * 1988-08-05 1990-02-14 Koudenshi Kogyo Kenkyusho:Kk ベース変調形バイポーラ・トランジスタ

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4160986A (en) * 1976-08-02 1979-07-10 Johnson David M Bipolar transistors having fixed gain characteristics
JPS58103169A (ja) * 1981-12-15 1983-06-20 Matsushita Electric Ind Co Ltd 半導体可変抵抗素子
TWI343047B (en) * 2005-10-13 2011-06-01 Lg Electronics Inc Method and apparatus for encoding/ decoding

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953781A (ja) * 1972-09-28 1974-05-24

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL224962A (ja) * 1958-02-15
DE1294558B (de) * 1961-06-07 1969-05-08 Westinghouse Electric Corp Hochspannungsgleichrichter und Verfahren zum Herstellen
FR1450846A (fr) * 1964-07-21 1966-06-24 Siemens Ag Composant à semi-conducteurs et son procédé de fabrication
US3760239A (en) * 1971-06-09 1973-09-18 Cress S Coaxial inverted geometry transistor having buried emitter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4953781A (ja) * 1972-09-28 1974-05-24

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0244758A (ja) * 1988-08-05 1990-02-14 Koudenshi Kogyo Kenkyusho:Kk ベース変調形バイポーラ・トランジスタ

Also Published As

Publication number Publication date
FR2331154B1 (ja) 1980-02-15
GB1525469A (en) 1978-09-20
JPS5944788B2 (ja) 1984-11-01
SE412145B (sv) 1980-02-18
SE7511628L (sv) 1976-04-20
FR2331154A1 (fr) 1977-06-03
US3979769A (en) 1976-09-07
DE2545908C2 (de) 1987-02-05
DE2545908A1 (de) 1976-05-06

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