JPS5146073A - Handotaisochi - Google Patents

Handotaisochi

Info

Publication number
JPS5146073A
JPS5146073A JP12050674A JP12050674A JPS5146073A JP S5146073 A JPS5146073 A JP S5146073A JP 12050674 A JP12050674 A JP 12050674A JP 12050674 A JP12050674 A JP 12050674A JP S5146073 A JPS5146073 A JP S5146073A
Authority
JP
Japan
Prior art keywords
handota
isochi
handota isochi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12050674A
Other languages
English (en)
Inventor
Manabu Bonshihara
Yoshio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP12050674A priority Critical patent/JPS5146073A/ja
Publication of JPS5146073A publication Critical patent/JPS5146073A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
JP12050674A 1974-10-18 1974-10-18 Handotaisochi Pending JPS5146073A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12050674A JPS5146073A (ja) 1974-10-18 1974-10-18 Handotaisochi

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12050674A JPS5146073A (ja) 1974-10-18 1974-10-18 Handotaisochi

Publications (1)

Publication Number Publication Date
JPS5146073A true JPS5146073A (ja) 1976-04-20

Family

ID=14787869

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12050674A Pending JPS5146073A (ja) 1974-10-18 1974-10-18 Handotaisochi

Country Status (1)

Country Link
JP (1) JPS5146073A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691453A (en) * 1979-12-26 1981-07-24 Hitachi Ltd Manufacturing of semiconductor device
JPH04506701A (ja) * 1990-04-03 1992-11-19 ユニオン カーバイド インダストリアル ガセズ テクノロジー コーポレイション 酸素及び中圧窒素製造のための極低温空気分離方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5691453A (en) * 1979-12-26 1981-07-24 Hitachi Ltd Manufacturing of semiconductor device
JPS6244690B2 (ja) * 1979-12-26 1987-09-22 Hitachi Ltd
JPH04506701A (ja) * 1990-04-03 1992-11-19 ユニオン カーバイド インダストリアル ガセズ テクノロジー コーポレイション 酸素及び中圧窒素製造のための極低温空気分離方法

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