JPS5145945B1 - - Google Patents

Info

Publication number
JPS5145945B1
JPS5145945B1 JP47066773A JP6677372A JPS5145945B1 JP S5145945 B1 JPS5145945 B1 JP S5145945B1 JP 47066773 A JP47066773 A JP 47066773A JP 6677372 A JP6677372 A JP 6677372A JP S5145945 B1 JPS5145945 B1 JP S5145945B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP47066773A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5145945B1 publication Critical patent/JPS5145945B1/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213Channel regions of field-effect devices
    • H10D62/335Channel regions of field-effect devices of charge-coupled devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B12/00Dynamic random access memory [DRAM] devices
    • H10B12/30DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00Charge transfer devices
    • H10D44/40Charge-coupled devices [CCD]
    • H10D44/45Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 

Landscapes

  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP47066773A 1971-07-06 1972-07-05 Pending JPS5145945B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US15986071A 1971-07-06 1971-07-06

Publications (1)

Publication Number Publication Date
JPS5145945B1 true JPS5145945B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1976-12-06

Family

ID=22574399

Family Applications (1)

Application Number Title Priority Date Filing Date
JP47066773A Pending JPS5145945B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-07-06 1972-07-05

Country Status (7)

Country Link
JP (1) JPS5145945B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA961170A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH550458A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2232765C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES404184A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2144903B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT956843B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2326761A1 (fr) * 1975-09-30 1977-04-29 Siemens Ag Memoire d'informations pour la memorisation d'informations sous forme de porteurs de charge electriques et procede pour sa mise en oeuvre
DE2543628C2 (de) * 1975-09-30 1987-05-07 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement zum Speichern von Information in Form von elektrischen Ladungen, Verfahren zu seinem Betrieb und Informatiosspeicher mit solchen Halbleiterbauelementen
DE2708101A1 (de) * 1977-02-25 1978-08-31 Itt Ind Gmbh Deutsche Verfahren zum schreiben eines speichertransistors mit gate-isolierdoppelschicht

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2137069B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-05-12 1976-03-19 Commissariat Energie Atomique
GB1374009A (en) * 1971-08-09 1974-11-13 Ibm Information storage

Also Published As

Publication number Publication date
FR2144903B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1977-01-14
IT956843B (it) 1973-10-10
ES404184A1 (es) 1975-06-01
DE2232765C3 (de) 1982-05-27
CH550458A (de) 1974-06-14
FR2144903A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-02-16
DE2232765B2 (de) 1981-10-15
DE2232765A1 (de) 1973-01-18
CA961170A (en) 1975-01-14

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