JPS5143944B2 - - Google Patents

Info

Publication number
JPS5143944B2
JPS5143944B2 JP2568572A JP2568572A JPS5143944B2 JP S5143944 B2 JPS5143944 B2 JP S5143944B2 JP 2568572 A JP2568572 A JP 2568572A JP 2568572 A JP2568572 A JP 2568572A JP S5143944 B2 JPS5143944 B2 JP S5143944B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP2568572A
Other languages
Japanese (ja)
Other versions
JPS4895181A (zh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP2568572A priority Critical patent/JPS5143944B2/ja
Publication of JPS4895181A publication Critical patent/JPS4895181A/ja
Publication of JPS5143944B2 publication Critical patent/JPS5143944B2/ja
Expired legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)
  • Dicing (AREA)
JP2568572A 1972-03-15 1972-03-15 Expired JPS5143944B2 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2568572A JPS5143944B2 (zh) 1972-03-15 1972-03-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2568572A JPS5143944B2 (zh) 1972-03-15 1972-03-15

Publications (2)

Publication Number Publication Date
JPS4895181A JPS4895181A (zh) 1973-12-06
JPS5143944B2 true JPS5143944B2 (zh) 1976-11-25

Family

ID=12172630

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2568572A Expired JPS5143944B2 (zh) 1972-03-15 1972-03-15

Country Status (1)

Country Link
JP (1) JPS5143944B2 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3587081B2 (ja) 1999-05-10 2004-11-10 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法及びｉｉｉ族窒化物半導体発光素子
JP3555500B2 (ja) 1999-05-21 2004-08-18 豊田合成株式会社 Ｉｉｉ族窒化物半導体及びその製造方法
US6580098B1 (en) 1999-07-27 2003-06-17 Toyoda Gosei Co., Ltd. Method for manufacturing gallium nitride compound semiconductor
JP2001185493A (ja) 1999-12-24 2001-07-06 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法及びｉｉｉ族窒化物系化合物半導体素子
JP4432180B2 (ja) 1999-12-24 2010-03-17 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法、ｉｉｉ族窒化物系化合物半導体素子及びｉｉｉ族窒化物系化合物半導体
US7141444B2 (en) 2000-03-14 2006-11-28 Toyoda Gosei Co., Ltd. Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP2001267242A (ja) 2000-03-14 2001-09-28 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体及びその製造方法
TW518767B (en) 2000-03-31 2003-01-21 Toyoda Gosei Kk Production method of III nitride compound semiconductor and III nitride compound semiconductor element
JP2001313259A (ja) 2000-04-28 2001-11-09 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体基板の製造方法及び半導体素子
JP3864670B2 (ja) 2000-05-23 2007-01-10 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子の製造方法
US7052979B2 (en) 2001-02-14 2006-05-30 Toyoda Gosei Co., Ltd. Production method for semiconductor crystal and semiconductor luminous element
JP2002280314A (ja) 2001-03-22 2002-09-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体の製造方法、及びそれに基づくｉｉｉ族窒化物系化合物半導体素子
JP3690326B2 (ja) 2001-10-12 2005-08-31 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体の製造方法
JP4241764B2 (ja) * 2006-06-07 2009-03-18 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体発光素子

Also Published As

Publication number Publication date
JPS4895181A (zh) 1973-12-06

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